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IXGK35N120BD1

IXGK35N120BD1
Mfr. #:
IXGK35N120BD1
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors 70 Amps 1200V 3.3 V Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXGK35N120BD1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXGK35N120BD1 Datasheet
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-264AA-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1200 V
Maximale Gate-Emitter-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
IXGK35N120
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
70 A
Höhe:
26.16 mm
Länge:
19.96 mm
Breite:
5.13 mm
Marke:
IXYS
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
25
Unterkategorie:
IGBTs
Gewichtseinheit:
0.352740 oz
Tags
IXGK35, IXGK3, IXGK, IXG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1.2KV 70A 3-Pin (3+Tab) TO-264AA
***i-Key
IGBT 70A 1200V TO-264AA
*** International
IGBT 1200V 70A 350W TO264AA
***ical
Trans IGBT Chip N-CH 1200V 94A 379000mW 3-Pin(3+Tab) TO-264 MAX Tube
***ure Electronics
APT35GN120L2DQ2G Series 1200 V 94 A Through Hole NPT IGBT - TO-264
***rochip
IGBT Fieldstop Low Frequency Combi 1200 V 35 A TO-264 MAX
***ical
Trans IGBT Chip N-CH 1200V 200A 833000mW 3-Pin(3+Tab) TO-264 Tube
***ure Electronics
APT75GN120LG Series 1200 V 200 A Trench and Field Stop IGBT - TO-264-3
***rochip
IGBT Fieldstop Low Frequency Single 1200 V 75 A TO-264
***ure Electronics
APT50GR120 Series 1200 V 50 A 445 nC 694 W NPT IGBT - TO-264-3
***et
Ultra Fast NPT IGBT N-Channel 1200V 117A 3-Pin TO-264
*** Stop Electro
Insulated Gate Bipolar Transistor, 117A I(C), 1200V V(BR)CES, N-Channel
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 188 A Flange Mount High-Speed IGBT - TO-264
***ical
Trans IGBT Chip N-CH 1.2KV 188A 3-Pin(3+Tab) TO-264AA
***i-Key
IGBT 1200V 188A 1150W TO264
***trelec
IGBT, 1.2kV, 188A, TO-264
***S
new, original packaged
***p One Stop Global
HIGH-SPEED IGBT
***i-Key
IGBT 1400V 60A 300W TO264
***DA Technology Co., Ltd.
Product Description Demo for Development.
***S
French Electronic Distributor since 1988
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 164 A Through Hole High-Speed IGBT - PLUS264
***i-Key
IGBT 1200V 164A 1040W PLUS264
***trelec
IGBT, 1.2kV, 164A, ISOPLUS264
***ark
Igbt, Single, N-Ch, 1.2Kv, 164A, To264Aa; Dc Collector Current:164A; Collector Emitter Saturation Voltage Vce(On):2.75V; Power Dissipation Pd:1.04Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-264Aa; No. Of Rohs Compliant: Yes
***S
new, original packaged
Teil # Mfg. Beschreibung Aktie Preis
IXGK35N120BD1
DISTI # IXGK35N120BD1-ND		IXYS CorporationIGBT 1200V 70A 350W TO264AA
RoHS: Compliant
Min Qty: 25
Container: Tube		Temporarily Out of Stock
  • 25:$14.4716
IXGK35N120BD1
DISTI # 747-IXGK35N120BD1		IXYS CorporationIGBT Transistors 70 Amps 1200V 3.3 V Rds
RoHS: Compliant		0
    Bild Teil # Beschreibung
    IXGK35N120BD1

    Mfr.#: IXGK35N120BD1

    OMO.#: OMO-IXGK35N120BD1

    		 IGBT Transistors 70 Amps 1200V 3.3 V Rds
    IXGK35N120B

    Mfr.#: IXGK35N120B

    OMO.#: OMO-IXGK35N120B

    		 IGBT Transistors 70 Amps 1200V 3.3 V Rds
    IXGK35N120CD1

    Mfr.#: IXGK35N120CD1

    OMO.#: OMO-IXGK35N120CD1

    		 IGBT Transistors 70 Amps 1200V 4 V Rds
    IXGK35N120C

    Mfr.#: IXGK35N120C

    OMO.#: OMO-IXGK35N120C-1190

    		 Neu und Original
    IXGK35N120CD1

    Mfr.#: IXGK35N120CD1

    OMO.#: OMO-IXGK35N120CD1-IXYS-CORPORATION

    		 IGBT Transistors 70 Amps 1200V 4 V Rds
    IXGK35N120BD1

    Mfr.#: IXGK35N120BD1

    OMO.#: OMO-IXGK35N120BD1-IXYS-CORPORATION

    		 IGBT Transistors 70 Amps 1200V 3.3 V Rds
    IXGK35N120B

    Mfr.#: IXGK35N120B

    OMO.#: OMO-IXGK35N120B-IXYS-CORPORATION

    		 IGBT Transistors 70 Amps 1200V 3.3 V Rds
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3000
    Menge eingeben:
    Der aktuelle Preis von IXGK35N120BD1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    25
    13,78 $
    344,50 $
    50
    12,99 $
    649,50 $
    100
    12,67 $
    1 267,00 $
    250
    11,55 $
    2 887,50 $
    500
    10,80 $
    5 400,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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