BBS3002-DL-1E

Mfr. #:: BBS3002-DL-1E
Hersteller:: ON Semiconductor
Beschreibung:: MOSFET MOSFET PCH 4V DRIVE SERIES
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BBS3002-DL-1E Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: ON Semiconductor

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TO-263-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: P-Kanal

Vds - Drain-Source-Durchbruchspannung:: 60 V

Id - Kontinuierlicher Drainstrom:: 100 A

Rds On - Drain-Source-Widerstand:: 5.8 mOhms

Vgs - Gate-Source-Spannung:: 10 V

Qg - Gate-Ladung:: 280 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 90 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Spule

Serie:: BBS3002

Transistortyp:: 1 P-Channel

Marke:: ON Semiconductor

Abfallzeit:: 820 ns

Produktart:: MOSFET

Anstiegszeit:: 1000 ns

Werkspackungsmenge:: 800

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 800 ns

Typische Einschaltverzögerungszeit:: 95 ns

Gewichtseinheit:: 0.139332 oz

Tags: BBS3002-D, BBS3002, BBS30, BBS3, BBS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BBS3002-DL-1E Beschreibung

***ure Electronics: BBS3002 Series 60 V 100 A 5.8 mOhm SMT P-Channel Power Mosfet - D2PAK-3

***ical: Trans MOSFET P-CH 60V 100A Automotive 3-Pin(2+Tab) D2PAK T/R

***emi: Power MOSFET, P-Channel, -60V, -100A, 5.8mΩ

***ark: MOSFET, P-CH, -60V, -100A, TO-263-3; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 100A I(D), 60V, 0.009ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, P-CH, -60V, -100A, TO-263-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -100A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.0044ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 90W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: -; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***emi: Power MOSFET, P-Channel, -60V, -100A, 5.8mΩ

***ure Electronics: P-Channel 60 V 100 A 5.8 mOhm Surface Mount Power Mosfet - TO-263

***ark: MOSFET, P-CH, -60V, -100A, TO-263; Channel Type:P Channel; Drain Source Voltage Vds:-60V; Continuous Drain Current Id:-100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2.6V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 100A I(D), 60V, 0.009ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, P-CH, -60V, -100A, TO-263; Transistor Polarity: P Channel; Continuous Drain Current Id: -100A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.0044ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.6V; Power Dissipation Pd: 90W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 60 V 5.1 mOhm 88 nC HEXFET® Power Mosfet - D2PAK

***Yang: Trans MOSFET N-CH 60V 110A 3-Pin D2PAK T/R - Tape and Reel

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 110A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:110A; On Resistance Rds(On):0.0042Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V Rohs Compliant: Yes

***ineon SCT: Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

***(Formerly Allied Electronics): AUIRFS3306 N-channel MOSFET Transistor; 120 A; 160 A; 60 V; 3-Pin D2PAK

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushed Motor Drive; Brushless Motor Drive

***et: Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-263

*** Electronics: MOSFET, N CH, 60V, 90A, TO263

***nell: MOSFET, N CH, 60V, 90A, TO263; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:272W; Voltage Vgs Max:20V

***emi: N-Channel Power MOSFET, 60V, 100A, 4.7mΩ, TO-262-3L/TO-263-2L

***r Electronics: Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ical: Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BBS3002-DL-1E DISTI # 31291737	ON Semiconductor	Trans MOSFET P-CH 60V 100A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	800	800:$2.3763
BBS3002-DL-1E DISTI # BBS3002-DL-1EOSCT-ND	ON Semiconductor	MOSFET P-CH 60V 100A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3102In Stock	100:$3.1425 10:$3.8320 1:$4.2900
BBS3002-DL-1E DISTI # BBS3002-DL-1EOSDKR-ND	ON Semiconductor	MOSFET P-CH 60V 100A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3102In Stock	100:$3.6984 10:$4.5100 1:$5.0500
BBS3002-DL-1E DISTI # BBS3002-DL-1EOSTR-ND	ON Semiconductor	MOSFET P-CH 60V 100A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	2400In Stock	800:$2.6273
BBS3002-DL-1E DISTI # BBS3002-DL-1E	ON Semiconductor	Trans MOSFET P-CH 60V 100A 3-Pin(2+Tab) TO-263 T/R (Alt: BBS3002-DL-1E) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Europe - 1600	800:€2.2900 1600:€2.1900 3200:€2.0900 4800:€1.9900 8000:€1.7900
BBS3002-DL-1E DISTI # BBS3002-DL-1E	ON Semiconductor	Trans MOSFET P-CH 60V 100A 3-Pin(2+Tab) TO-263 T/R - Bulk (Alt: BBS3002-DL-1E) Min Qty: 169 Container: Bulk	Americas - 0
BBS3002-DL-1E DISTI # BBS3002-DL-1E	ON Semiconductor	Trans MOSFET P-CH 60V 100A 3-Pin(2+Tab) TO-263 T/R (Alt: BBS3002-DL-1E) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Asia - 0	800:$3.1846 1600:$3.0621 2400:$2.9487 4000:$2.8434 8000:$2.7453 20000:$2.6538 40000:$2.6103
BBS3002-DL-1E DISTI # BBS3002-DL-1E	ON Semiconductor	Trans MOSFET P-CH 60V 100A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: BBS3002-DL-1E) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	800:$1.8900 1600:$1.8900 3200:$1.8900 4800:$1.8900 8000:$1.8900
BBS3002-DL-1E DISTI # 42AC1708	ON Semiconductor	Trans MOSFET P-CH 60V 100A 3-Pin(2+Tab) TO-263 T/R - Product that comes on tape, but is not reeled (Alt: 42AC1708) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$4.1500 10:$3.5600 25:$3.4000 50:$3.2600 100:$3.1000 250:$2.9600 500:$2.6800
BBS3002-DL-1E DISTI # 56W5114	ON Semiconductor	PCH 4V DRIVE SERIES / REEL	0	3200:$2.2300 1600:$2.2800 800:$2.3500 500:$2.8800 250:$3.1800 100:$3.5000 25:$3.8200 1:$4.6900
BBS3002-DL-1E DISTI # 42AC1708	ON Semiconductor	MOSFET, P-CH, -60V, -100A, TO-263-3,Transistor Polarity:P Channel,Continuous Drain Current Id:-100A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.0044ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:- RoHS Compliant: Yes	1795	500:$3.1500 250:$3.4800 100:$3.6400 50:$3.8300 25:$4.0000 10:$4.1800 1:$4.8800
BBS3002-DL-1E DISTI # 46AC0501	ON Semiconductor	MOSFET, P-CH, -60V, -100A, TO-263-3,Transistor Polarity:P Channel,Continuous Drain Current Id:-100A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.0044ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-,Power RoHS Compliant: Yes	453	1000:$2.4300 500:$2.5900 250:$2.7300 100:$3.4400 50:$3.9600 25:$4.3800 10:$4.7700 1:$5.4100
BBS3002-DL-1E DISTI # 863-BBS3002-DL-1E	ON Semiconductor	MOSFET MOSFET PCH 4V DRIVE SERIES RoHS: Compliant	13303	1:$3.5900 10:$3.0500 100:$2.6400 250:$2.5100 500:$2.2500 800:$1.9000 2400:$1.8000
BBS3002-DL-1E	ON Semiconductor	Power Field-Effect Transistor RoHS: Compliant	1592	1000:$2.3300 500:$2.4500 100:$2.5500 25:$2.6600 1:$2.8700
BBS3002-DL-1E DISTI # 2825142	ON Semiconductor	MOSFET, P-CH, -60V, -100A, TO-263-3 RoHS: Compliant	450	1000:$3.0400 500:$3.3400 250:$3.8100 100:$4.2300 10:$4.8800 1:$5.6000
BBS3002-DL-1E DISTI # 2825142	ON Semiconductor	MOSFET, P-CH, -60V, -100A, TO-263-3 RoHS: Compliant	583	500:£1.6100 250:£1.9500 100:£2.0600 10:£2.3700 1:£3.1400

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1992
Menge eingeben:

Der aktuelle Preis von BBS3002-DL-1E dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~4,21 $~~; ~~4,21 $~~

10: ~~3,58 $~~; ~~35,80 $~~

100: ~~3,10 $~~; ~~310,00 $~~

250: ~~2,94 $~~; ~~735,00 $~~

500: ~~2,64 $~~; ~~1 320,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

BBS3002-D 3
BBS3002 6
BBS30 7
BBS3 11
BBS 333

BBS3002-DL-1E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes