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IRFS4115-7PPBF

IRFS4115-7PPBF
Mfr. #:
IRFS4115-7PPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 150V 105A D2PAK-7
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFS4115-7PPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFS4115-7PPBF DatasheetIRFS4115-7PPBF Datasheet (P4-P6)IRFS4115-7PPBF Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IR
Produktkategorie
FETs - Einzeln
Verpackung
Rohr
Gewichtseinheit
0.056438 oz
Montageart
SMD/SMT
Paket-Koffer
TO-263-7
Technologie
Si
Anzahl der Kanäle
1 Channel
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
380 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
23 ns
Anstiegszeit
50 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
105 A
Vds-Drain-Source-Breakdown-Voltage
150 V
Vgs-th-Gate-Source-Threshold-Voltage
5 V
Rds-On-Drain-Source-Widerstand
10 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
37 ns
Typische-Einschaltverzögerungszeit
18 ns
Qg-Gate-Ladung
73 nC
Vorwärts-Transkonduktanz-Min
93 S
Tags
IRFS411, IRFS41, IRFS4, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
***(Formerly Allied Electronics)
MOSFET, 150V, 105A, 11.8 mOhm, 73 nC Qg, D2PAK-7
***et
Trans MOSFET N-CH 150V 105A 7-Pin(6+Tab) D2PAK Tube
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK-7 Polarity: N Power dissipation: 380 W
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 105A I(D), 150V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***ment14 APAC
MOSFET, N-CH 150V 105A D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:150V; On Resistance Rds(on):11.8mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Current Id Max:105A; Package / Case:D2-PAK-7; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
***ure Electronics
Single N-Channel 150 V 11.8 mOhm 110 nC HEXFET® Power Mosfet - D2PAK-7
*** Source Electronics
Trans MOSFET N-CH 150V 105A 7-Pin(6+Tab) D2PAK T/R / MOSFET N-CH 150V 105A D2PAK-7
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
***nell
MOSFET, N-CH, 150V, 105A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 105A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 380W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
*** Stop Electro
Power Field-Effect Transistor, 105A I(D), 150V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
***ure Electronics
Single N-Channel 150 V 14.7 mOhm 71 nC HEXFET® Power Mosfet - D2PAK-7
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
***Yang
Trans MOSFET N-CH 150V 86A 7-Pin D2PAK T/R - Tape and Reel
***ineon
Benefits: Low Rdson Reduces Losses; Low Gate Charge Improves the Switching Performance; Improved Diode Recovery Improves Switching and EMI Performance; 30V Gate Voltage Rating Improves Robustness; Fully Characterized Avalanche SOA | Target Applications: Battery Operated Drive
***ineon SCT
Automotive Q101 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package, D2PAK7P, RoHS
***et
Trans MOSFET N-CH 150V 105A 7-Pin D2PAK Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.8pF 50Volts C0G +/-0.25pF
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:105A; On Resistance Rds(On):0.0118Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V Rohs Compliant: Yes
***icroelectronics
N-channel 100 V, 4.9 mOhm typ., 110 A STripFET F7 Power MOSFET in H2PAK-6 package
***r Electronics
Power Field-Effect Transistor, 110A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 100V 110A 7-Pin(6+Tab) H2PAK T/R
*** Electronic Components
MOSFET N-CH 100V 49mOhm 110A STripFET VII
***el Electronic
CAP CERAMIC DISK RDL LONG LEADS
***emi
N-Channel PowerTrench® MOSFET 150V, 130A, 6.4mΩ
***et
N-Channel 150V 130A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount D²PAK (TO-263)
***r Electronics
Power Field-Effect Transistor, 130A I(D), 150V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
***icroelectronics
Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET
***ical
Trans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) H2PAK T/R
*** Electronics
STMICROELECTRONICS STH315N10F7-6 MOSFET Transistor, N Channel, 180 A, 100 V, 0.0021 ohm, 10 V, 3.5 V
***nell
MOSFET, N CH, 100V, 180A, H2PAK-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V
Teil # Mfg. Beschreibung Aktie Preis
IRFS4115-7PPBF
DISTI # V36:1790_06392342		Infineon Technologies AGTrans MOSFET N-CH 150V 105A 7-Pin(6+Tab) D2PAK Tube60
  • 1000:$3.6970
  • 500:$3.8970
  • 100:$4.2290
  • 50:$4.6970
IRFS4115-7PPBF
DISTI # IRFS4115-7PPBF-ND		Infineon Technologies AGMOSFET N-CH 150V 105A D2PAK-7
RoHS: Compliant
Min Qty: 200
Container: Tube		Limited Supply - Call
    IRFS4115-7PPBF
    DISTI # 27095025    		Infineon Technologies AGTrans MOSFET N-CH 150V 105A 7-Pin(6+Tab) D2PAK Tube50
    • 50:$4.6970
    IRFS4115-7PPBF
    DISTI # 70019189    		Infineon Technologies AGIRFS4115-7PPBF N-channel MOSFET Transistor,105 A,150 V,7-Pin D2PAK
    RoHS: Compliant    		0
    • 200:$3.0300
    IRFS4115-7PPBFInternational Rectifier 
    RoHS: Not Compliant    		14
    • 1000:$2.1700
    • 500:$2.2900
    • 100:$2.3800
    • 25:$2.4800
    • 1:$2.6700
    IRFS4115-7PPBF
    DISTI # 942-IRFS4115-7PPBF    		Infineon Technologies AGMOSFET 150V 1 N-CH HEXFET 11.8mOhms 73nC
    RoHS: Compliant    		0
      IRFS41157PPBFInternational Rectifier 
      RoHS: Compliant      		Europe - 166
        IRFS4115-7PPBF
        DISTI # C1S322000587021        		Infineon Technologies AGMOSFETs60
        • 50:$4.6970
        Bild Teil # Beschreibung
        IRFS4115TRLPBF

        Mfr.#: IRFS4115TRLPBF

        OMO.#: OMO-IRFS4115TRLPBF

        		 MOSFET MOSFT 150V 99A 12.1mOhm 77nC Qg
        IRFS4115TRL7PP

        Mfr.#: IRFS4115TRL7PP

        OMO.#: OMO-IRFS4115TRL7PP

        		 MOSFET MOSFT 150V 105A 11.8mOhm 73nC Qg
        IRFS4115TRLPBF-CUT TAPE

        Mfr.#: IRFS4115TRLPBF-CUT TAPE

        OMO.#: OMO-IRFS4115TRLPBF-CUT-TAPE-1190

        		 Neu und Original
        IRFS4115

        Mfr.#: IRFS4115

        OMO.#: OMO-IRFS4115-1190

        		 Neu und Original
        IRFS4115-7PPBF

        Mfr.#: IRFS4115-7PPBF

        OMO.#: OMO-IRFS4115-7PPBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 150V 105A D2PAK-7
        IRFS4115PBF

        Mfr.#: IRFS4115PBF

        OMO.#: OMO-IRFS4115PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 150V 195A D2-PAK
        IRFS4115TR

        Mfr.#: IRFS4115TR

        OMO.#: OMO-IRFS4115TR-1190

        		 Neu und Original
        IRFS4115TRL7PP

        Mfr.#: IRFS4115TRL7PP

        OMO.#: OMO-IRFS4115TRL7PP-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 150V 105A D2PAK-7
        IRFS4115TRLPBF

        Mfr.#: IRFS4115TRLPBF

        OMO.#: OMO-IRFS4115TRLPBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 150V 195A D2PAK
        IRFS4115TRPBF

        Mfr.#: IRFS4115TRPBF

        OMO.#: OMO-IRFS4115TRPBF-1190

        		 Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5000
        Menge eingeben:
        Der aktuelle Preis von IRFS4115-7PPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        3,26 $
        3,26 $
        10
        3,09 $
        30,92 $
        100
        2,93 $
        292,95 $
        500
        2,77 $
        1 383,40 $
        1000
        2,60 $
        2 604,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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