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IRFB31N20DPBF

IRFB31N20DPBF
Mfr. #:
IRFB31N20DPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFT 200V 31A 82mOhm 70nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFB31N20DPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFB31N20DPBF DatasheetIRFB31N20DPBF Datasheet (P4-P6)IRFB31N20DPBF Datasheet (P7-P9)IRFB31N20DPBF Datasheet (P10-P12)
ECAD Model:
Mehr Informationen:
IRFB31N20DPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
31 A
Rds On - Drain-Source-Widerstand:
82 mOhms
Vgs th - Gate-Source-Schwellenspannung:
5.5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
70 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
200 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
17 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
38 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
26 ns
Typische Einschaltverzögerungszeit:
16 ns
Teil # Aliase:
SP001560192
Gewichtseinheit:
0.211644 oz
Tags
IRFB31N20D, IRFB31, IRFB3, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;TO-220AB;PD 200W;VGS +/-30V
***ure Electronics
Single N-Channel 200 V 0.082 Ohm 107 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop
Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 200V, 31A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):82mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Junction to Case Thermal Resistance A:0.75°C/W; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:124A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
*** Source Electronics
MOSFET N-CH 200V 24A TO-220AB / Trans MOSFET N-CH 200V 24A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
Single N-Channel 200 V 100 mOhm 57 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 1200pF 1000volt U2J +/-5%
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:24A; On Resistance, Rds(on):100mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***emi
N-Channel Power MOSFET, UniFETTM, 200V, 39A, 66mΩ, TO-220F
***ure Electronics
FDPF39N20 Series 200 V 39 A 66 mOhm N-Ch UniFet Mosfet - TO-220-3FP
***Yang
Trans MOSFET N-CH 200V 39A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***enic
200V 39A 37W 66m´Î@10V19.5A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 39A I(D), 200V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:200V; On Resistance Rds(on):66mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:37W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:39A; Package / Case:TO-220F; Power Dissipation Pd:37W; Pulse Current Idm:156A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM, 250 V, 33 A, 94 mΩ, TO-220
***Yang
Trans MOSFET N-CH 250V 33A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***ure Electronics
N-Channel 250 V 94 mOhm Flange Mount Mosfet - TO-220
*** Stop Electro
Power Field-Effect Transistor, 33A I(D), 250V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):0.094ohm; Rds(on) Test Voltage, Vgs:5V; Threshold Voltage, Vgs Typ:30V ;RoHS Compliant: Yes
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:250V; On Resistance Rds(on):94mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:235W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Capacitance Ciss Typ:1640pF; Current Id Max:33A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.53°C/W; On State Resistance Max:94mohm; On State Resistance Typ:77mohm; Package / Case:TO-220; Pin Configuration:G(1),D(2)S(3); Power Dissipation Pd:235W; Power Dissipation Pd:235W; Pulse Current Idm:132A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
*** Source Electronics
Trans MOSFET N-CH Si 200V 25A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 25A TO-220AB
***ineon SCT
200V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 200 V 72.5 mOhm 25 nC HEXFET® Power Mosfet - TO-220-3
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Class D Audio; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, CLASS D, 200V, TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:200V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:25A; Package / Case:TO-220AB; Power Dissipation Pd:144W; Power Dissipation Pd:144W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
***ure Electronics
Single N-Channel 150 V 56 mOhm 60 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
N CH MOSFET, 150V, 33A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:150V; On Resistance Rds(on):56mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:33A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:56ohm; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:130A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***emi
Power MOSFET, N-Channel, QFET®, 200 V, 31 A, 75 mΩ, TO-220
***ure Electronics
Single N-Channel 200 V 0.075 Ohm 78 nC 180 W DMOS Flange Mount Mosfet - TO-220-3
***et Europe
Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Rail
***r Electronics
Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET,N CH,200V,31A,TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:180W; Operating Temperature Range:-55°C to +105°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Power Dissipation Pd:180W; Voltage Vgs Max:30V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRFB31N20DPBF
DISTI # V99:2348_13889968		Infineon Technologies AGTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube885
  • 10000:$0.8597
  • 5000:$0.8913
  • 2000:$0.9237
  • 1000:$0.9777
  • 500:$1.1767
  • 100:$1.2728
  • 10:$1.6040
  • 1:$1.8505
IRFB31N20DPBF
DISTI # V36:1790_13889968		Infineon Technologies AGTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube793
  • 10000:$0.8597
  • 5000:$0.8913
  • 2000:$0.9237
  • 1000:$0.9777
  • 500:$1.1767
  • 100:$1.2728
  • 10:$1.6040
  • 1:$1.8505
IRFB31N20DPBF
DISTI # IRFB31N20DPBF-ND		Infineon Technologies AGMOSFET N-CH 200V 31A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		637In Stock
  • 1000:$1.1226
  • 500:$1.3548
  • 100:$1.7419
  • 10:$2.1680
  • 1:$2.4000
IRFB31N20DPBF
DISTI # 30612859		Infineon Technologies AGTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube1000
  • 200:$1.2164
  • 100:$1.2750
  • 50:$1.3642
  • 10:$1.7723
  • 8:$3.4297
IRFB31N20DPBF
DISTI # 30276997		Infineon Technologies AGTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube885
  • 500:$1.1767
  • 100:$1.2728
  • 10:$1.6040
  • 9:$1.8505
IRFB31N20DPBF
DISTI # 31045708		Infineon Technologies AGTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube793
  • 500:$1.1767
  • 100:$1.2728
  • 10:$1.6040
  • 9:$1.8505
IRFB31N20DPBF
DISTI # 7932783		Infineon Technologies AGTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube340
  • 13:$0.7955
IRFB31N20DPBF
DISTI # IRFB31N20DPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB31N20DPBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 1052
  • 1:$1.3089
  • 10:$1.1799
  • 25:$1.1769
  • 50:$1.1739
  • 100:$1.0139
  • 500:$1.0119
  • 1000:$0.9989
IRFB31N20DPBF
DISTI # SP001560192		Infineon Technologies AGTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB (Alt: SP001560192)
RoHS: Compliant
Min Qty: 1		Europe - 19500
  • 1:€1.7829
  • 10:€1.5159
  • 25:€1.5119
  • 50:€1.5089
  • 100:€1.2049
  • 500:€1.0579
  • 1000:€0.8809
IRFB31N20DPBF
DISTI # IRFB31N20DPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB (Alt: IRFB31N20DPBF)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    IRFB31N20DPBF
    DISTI # 57J2554    		Infineon Technologies AGN CHANNEL MOSFET, 200V, 31A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.082ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,MSL:- RoHS Compliant: Yes69
    • 1:$1.9500
    • 10:$1.6500
    • 100:$1.3200
    • 500:$1.1600
    • 1000:$0.9610
    • 2500:$0.8930
    • 5000:$0.8590
    IRFB31N20DPBF.
    DISTI # 27AC6762    		Infineon Technologies AGN CHANNEL MOSFET, 200V, 31A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.082ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,MSL:- RoHS Compliant: Yes0
    • 1:$2.1200
    • 10:$1.8000
    • 100:$1.4400
    • 500:$1.2400
    • 1000:$1.0300
    • 2500:$0.9510
    • 5000:$0.9150
    IRFB31N20DPBF
    DISTI # 70017529    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.082Ohm,ID 31A,TO-220AB,PD 200W,VGS +/-30V
    RoHS: Compliant    		0
    • 5:$4.2500
    • 10:$3.7500
    • 100:$3.2700
    • 500:$2.8400
    • 1000:$2.5000
    IRFB31N20DPBF
    DISTI # 942-IRFB31N20DPBF    		Infineon Technologies AGMOSFET MOSFT 200V 31A 82mOhm 70nC
    RoHS: Compliant    		1809
    • 1:$2.0800
    • 10:$1.7600
    • 100:$1.4100
    • 500:$1.2400
    • 1000:$1.0300
    • 2000:$0.9510
    • 5000:$0.9150
    IRFB31N20DPBFInfineon Technologies AGSingle N-Channel 200 V 0.082 Ohm 107 nC HEXFET Power Mosfet - TO-220-3
    RoHS: Compliant    		947Tube
    • 10:$1.0800
    • 100:$0.9750
    • 500:$0.8300
    IRFB31N20DPBF
    DISTI # 8273947    		Infineon Technologies AGMOSFET N-CH 200V 31A HEXFET SMPS TO220AB, PK145
    • 5:£1.6180
    • 50:£1.4220
    • 100:£1.2460
    • 250:£1.1640
    • 500:£1.1000
    IRFB31N20DPBF
    DISTI # 8655793    		Infineon Technologies AGMOSFET N-CH 200V 31A HEXFET SMPS TO220AB, TU65
    • 5:£1.6180
    • 100:£1.4220
    • 250:£1.2460
    • 500:£1.1640
    • 1000:£1.1000
    IRFB31N20DPBF
    DISTI # 8273947P    		Infineon Technologies AGMOSFET N-CH 200V 31A HEXFET SMPS TO220AB, TU785
    • 50:£1.4220
    • 100:£1.2460
    • 250:£1.1640
    • 500:£1.1000
    IRFB31N20DPBFInternational RectifierMOSFET Transistor, N-Channel, TO-220AB22
    • 11:$2.1900
    • 2:$2.6280
    • 1:$3.5040
    IRFB31N20DPBF
    DISTI # IRFB31N20DPBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,31A,200W,TO220AB3
    • 1:$1.6500
    • 3:$1.4900
    • 10:$1.2400
    • 100:$1.0700
    IRFB31N20DPBFInternational Rectifier 
    RoHS: Compliant    		Europe - 73
      IRFB31N20DPBF
      DISTI # IRFB31N20DPBF      		Infineon Technologies AGN-Ch 200V 31A 200W 0,082R TO220AB
      RoHS: Compliant      		400
      • 10:€1.1400
      • 50:€0.9045
      • 200:€0.8245
      • 500:€0.7940
      IRFB31N20DPBF
      DISTI # 8648751      		Infineon Technologies AGMOSFET, N, 200V, 31A, TO-220
      RoHS: Compliant      		1008
      • 1:$3.2900
      • 10:$2.7900
      • 100:$2.2300
      • 500:$1.9700
      • 1000:$1.6300
      • 2000:$1.5100
      • 5000:$1.4700
      IRFB31N20DPBF
      DISTI # XSKDRABS0006780      		Infineon Technologies AG 
      RoHS: Compliant      		13680
      • 1000:$1.4300
      • 13680:$1.3300
      IRFB31N20DPBF
      DISTI # XSLY00000000905      		Infineon Technologies AGTO-220AB
      RoHS: Compliant      		26280
      • 1000:$0.7143
      • 26280:$0.6667
      IRFB31N20DPBF
      DISTI # 8648751      		Infineon Technologies AGMOSFET, N, 200V, 31A, TO-220
      RoHS: Compliant      		1042
      • 1:£1.6500
      • 10:£1.3300
      • 100:£1.0900
      • 250:£1.0200
      • 500:£0.9540
      IRFB31N20DPBF
      DISTI # C1S322000631094      		Infineon Technologies AGTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		1000
      • 500:$0.9280
      • 200:$0.9540
      • 100:$1.0000
      • 50:$1.0700
      • 10:$1.3900
      • 1:$2.6900
      IRFB31N20DPBF
      DISTI # C1S322000488270      		Infineon Technologies AGTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		945
      • 500:$1.1767
      • 100:$1.2728
      • 10:$1.6040
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      Verfügbarkeit
      Aktie:
      865
      Auf Bestellung:
      2848
      Menge eingeben:
      Der aktuelle Preis von IRFB31N20DPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,08 $
      2,08 $
      10
      1,76 $
      17,60 $
      100
      1,41 $
      141,00 $
      500
      1,24 $
      620,00 $
      1000
      1,03 $
      1 030,00 $
      2000
      0,95 $
      1 902,00 $
      5000
      0,92 $
      4 575,00 $
      10000
      0,88 $
      8 800,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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