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SI4686DY-T1-GE3

SI4686DY-T1-GE3
Mfr. #:
SI4686DY-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4686DY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4686DY-T1-GE3 DatasheetSI4686DY-T1-GE3 Datasheet (P4-P6)SI4686DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SI4686DY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Serie:
SI4
Breite:
3.9 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Teil # Aliase:
SI4686DY-GE3
Gewichtseinheit:
0.006596 oz
Tags
SI4686DY-T1, SI4686DY-T, SI4686, SI468, SI46, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    D***n
    D***n
    RU

    Levak of course but work

    2019-02-17
    S***v
    S***v
    RU

    It was 1,5 months, did not check, outwardly everything is fine.

    2019-01-30
    A***n
    A***n
    RU

    Everything corresponds to the declared characteristics

    2019-04-03
    E***l
    E***l
    BR

    All OK

    2019-05-22
***et Europe
Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R
***ment14 APAC
N CHANNEL MOSFET, 30V, 18.2A, SOIC
***ponent Sense
MOSFET SO8S N 0.0144R 30V 13A~
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:18.2A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:3V ;RoHS Compliant: Yes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4686DY-T1-GE3
DISTI # SI4686DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 18.2A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.6930
SI4686DY-T1-GE3
DISTI # SI4686DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 18.2A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2500In Stock
  • 1000:$0.7648
  • 500:$0.9687
  • 100:$1.2491
  • 10:$1.5810
  • 1:$1.7800
SI4686DY-T1-GE3
DISTI # SI4686DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 18.2A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2500In Stock
  • 1000:$0.7648
  • 500:$0.9687
  • 100:$1.2491
  • 10:$1.5810
  • 1:$1.7800
SI4686DY-T1-GE3
DISTI # SI4686DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R (Alt: SI4686DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.5219
  • 5000:€0.3559
  • 10000:€0.3059
  • 15000:€0.2829
  • 25000:€0.2629
SI4686DY-T1-GE3
DISTI # SI4686DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4686DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.6189
  • 5000:$0.6009
  • 10000:$0.5759
  • 15000:$0.5599
  • 25000:$0.5449
SI4686DY-T1-GE3
DISTI # 15R5074		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 18.2A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:18.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):14mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes0
  • 1:$0.6170
  • 2500:$0.6120
  • 5000:$0.5940
  • 10000:$0.5720
SI4686DY-T1-GE3
DISTI # 26R1888		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 18.2A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:18.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):14mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes0
  • 1:$1.4900
  • 10:$1.2300
  • 25:$1.1300
  • 50:$1.0400
  • 100:$0.9410
  • 250:$0.8750
  • 500:$0.8090
SI4686DY-T1-GE3
DISTI # 781-SI4686DY-T1-GE3		Vishay IntertechnologiesMOSFET 30V 18.2A 5.2W 9.5mohm @ 10V
RoHS: Compliant		2486
  • 1:$1.4900
  • 10:$1.2300
  • 100:$0.9410
  • 500:$0.8090
  • 1000:$0.6390
  • 2500:$0.5960
  • 5000:$0.5670
  • 10000:$0.5530
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Mfr.#: LT3845EFE#PBF

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ISL6218CVZ

Mfr.#: ISL6218CVZ

OMO.#: OMO-ISL6218CVZ-INTERSIL

 Switching Controllers P6 MULTIPHS BUCK PWM CNTRLR FOR IMVP4 IBM
LM339PT

Mfr.#: LM339PT

OMO.#: OMO-LM339PT-STMICROELECTRONICS

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LD29150DT50R

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OMO.#: OMO-LD29150DT50R-STMICROELECTRONICS

 IC REG LINEAR 5V 1.5A DPAK
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von SI4686DY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,78 $
1,78 $
10
1,58 $
15,80 $
100
1,24 $
124,00 $
500
0,97 $
484,00 $
1000
0,76 $
764,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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