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IPB70N04S3-07

IPB70N04S3-07
Mfr. #:
IPB70N04S3-07
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB70N04S3-07 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
OptiMOS-T
Verpackung
Spule
Teil-Aliasnamen
IPB70N04S307ATMA1 IPB70N04S307XT SP000279556
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Handelsname
OptiMOS
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
79 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
7 ns
Anstiegszeit
8 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
80 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Rds-On-Drain-Source-Widerstand
6.2 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
17 ns
Typische-Einschaltverzögerungszeit
13 ns
Kanal-Modus
Erweiterung
Tags
IPB70N04, IPB70N0, IPB70N, IPB70, IPB7, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronic Components
IGBT Transistors MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
***et
Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) TO-263
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.22uF 6.3Volts X6S 10%
*** Electronics
MOSFET OPTIMOS -T PWR-TRANS 40V 70A 6.8mOhms
***ronik
N-CH 40V 80A 6mOhm TO263-3 RoHSconf
***ineon SCT
40V, N-Ch, 5.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T, PG-TO263-3, RoHS
***et
Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) TO-263
*** Electronic Components
MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
***i-Key
OPTLMOS N-CHANNEL POWER MOSFET
*** International
IPB80N04S3-06 Infineon Technologies
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
***p One Stop Global
Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R
***el Electronic
Chip Resistor - Surface Mount 63.4kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 63.4K OHM 1% 1/10W 0402
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:80A; On Resistance, Rds(on):6.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-263AB ;RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***emi
Power MOSFET 74 Amps, 30 Volts N-Channel D2PAK
***ponent Stockers USA
74 A 30 V 0.0093 ohm N-CHANNEL Si POWER MOSFET
***ser
MOSFETs- Power and Small Signal 30V 74A N-Channel
***r Electronics
Power Field-Effect Transistor, 74A I(D), 30V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ser
MOSFETs- Power and Small Signal 30V 74A N-Channel No-Cancel/No-Return
***i-Key
MOSFET N-CH 30V 74A D2PAK
***r Electronics
Power Field-Effect Transistor, 74A I(D), 30V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
*** Electronics
N-CHANNEL POWER MOSFET
*** Source Electronics
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R / OptiMOS-T2 Power-Transistor
***ure Electronics
Single N-Channel 40 V 4.2 mOhm 33 nC OptiMOS™ Power Mosfet - D2PAK
***ark
Mosfet, Aec-Q101, N-Ch, 40V, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0039Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
***ical
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***icroelectronics
Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET F6 Power MOSFET in a D2PAK package
***icroelectronics SCT
Automotive Power Discrete, 40V, 80A, D2PAK, Tape and Reel
***el Electronic
IC OFFLINE SWIT OTP CV/CC 8DIP
Teil # Mfg. Beschreibung Aktie Preis
IPB70N04S3-07
DISTI # IPB70N04S3-07TR-ND		Infineon Technologies AGMOSFET N-CH 40V 80A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IPB70N04S3-07
    DISTI # IPB70N04S3-07CT-ND    		Infineon Technologies AGMOSFET N-CH 40V 80A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPB70N04S3-07
      DISTI # IPB70N04S3-07DKR-ND      		Infineon Technologies AGMOSFET N-CH 40V 80A TO263-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPB70N04S307ATMA1Infineon Technologies AGPower Field-Effect Transistor, 82A I(D), 40V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252
        RoHS: Compliant        		2500
        • 1000:$0.4000
        • 500:$0.4200
        • 100:$0.4400
        • 25:$0.4500
        • 1:$0.4900
        IPB70N04S3-07
        DISTI # 726-IPB70N04S3-07        		Infineon Technologies AGMOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
        RoHS: Compliant        		0
          IPB70N04S307ATMA1
          DISTI # N/A          		Infineon Technologies AGMOSFET N-CHANNEL_30/40V0
            Bild Teil # Beschreibung
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            Mfr.#: IPB70N04S4-06

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            Mfr.#: IPB70N04S406

            OMO.#: OMO-IPB70N04S406-1190

            		 Power Field-Effect Transistor, 70A I(D), 40V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
            IPB70N04S3-07

            Mfr.#: IPB70N04S3-07

            OMO.#: OMO-IPB70N04S3-07-INFINEON-TECHNOLOGIES

            		 IGBT Transistors MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            5500
            Menge eingeben:
            Der aktuelle Preis von IPB70N04S3-07 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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