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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SIR836DP-T1-GE3 DISTI # V72:2272_07433335 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R | 100 |
|
| SIR836DP-T1-GE3 DISTI # V36:1790_07433335 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R | 0 |
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| SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 40V 21A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 7074In Stock |
|
| SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 40V 21A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 7074In Stock |
|
| SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 40V 21A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | 6000In Stock |
|
| SIR836DP-T1-GE3 DISTI # 33693676 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R | 6000 |
|
| SIR836DP-T1-GE3 DISTI # 32440685 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R | 100 |
|
| SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R (Alt: SIR836DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Asia - 0 | |
| SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR836DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SIR836DP-T1-GE3 DISTI # 05W6931 | Vishay Intertechnologies | MOSFET, N CHANNEL, 40V, 21A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes | 0 |
|
| SIR836DP-T1-GE3 DISTI # 86R3808 | Vishay Intertechnologies | MOSFET, N CHANNEL, 40V, 21A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes | 0 |
|
| SIR836DP-T1-GE3 DISTI # 78-SIR836DP-T1-GE3 | Vishay Intertechnologies | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 43139 |
|
| SIR836DPT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 21A I(D), 40V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 3000 | |
| SIR836DP-T1-GE3 | Vishay Intertechnologies | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 | Americas - 60000 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: SIR800ADP-T1-RE3 OMO.#: OMO-SIR800ADP-T1-RE3 |
MOSFET 20V Vds; 12/-8V Vgs PowerPAK SO-8 |
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Mfr.#: SIR871DP-T1-GE3 OMO.#: OMO-SIR871DP-T1-GE3-VISHAY |
MOSFET P-CH 100V 48A POWERPAKSO |
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Mfr.#: SIR878ADP-T1-GE3-CUT TAPE |
Neu und Original |
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Mfr.#: SIR876DP-T1-GE3 OMO.#: OMO-SIR876DP-T1-GE3-VISHAY |
MOSFET N-CH 100V 40A PPAK SO-8 |
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Mfr.#: SIR820DP-T1-E3 OMO.#: OMO-SIR820DP-T1-E3-1190 |
Neu und Original |
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Mfr.#: SIR82609 OMO.#: OMO-SIR82609-1190 |
Neu und Original |
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Mfr.#: SIR870DP-T1-GE3 OMO.#: OMO-SIR870DP-T1-GE3-VISHAY |
MOSFET N-CH 100V 60A PPAK SO-8 |
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Mfr.#: SIR872DP OMO.#: OMO-SIR872DP-1190 |
Neu und Original |
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Mfr.#: SIR876ANALOG DEVICES INC |
Neu und Original |
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Mfr.#: SIR826BDP-T1-RE3 OMO.#: OMO-SIR826BDP-T1-RE3-VISHAY |
N-Channel 80-V (D-S) MOSFET PowerPAK SO-8 250M SG 2 mil , 5.1 m @ 10V 4.9 m @ 7.5V m @ 4.5V |