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FDB031N08

FDB031N08
Mfr. #:
FDB031N08
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 75V N-Channel PowerTrench
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDB031N08 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
75 V
Id - Kontinuierlicher Drainstrom:
235 A
Rds On - Drain-Source-Widerstand:
3.1 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
375 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
4.83 mm
Länge:
10.67 mm
Serie:
FDB031N08
Transistortyp:
1 N-Channel
Breite:
9.65 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
121 ns
Produktart:
MOSFET
Anstiegszeit:
191 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
335 ns
Typische Einschaltverzögerungszeit:
230 ns
Gewichtseinheit:
0.062153 oz
Tags
FDB03, FDB0, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 75 V 3.1 mOhm Surface Mount PowerTrench® Mosfet - D2PAK-3
***emi
N-Channel PowerTrench® MOSFET 75V, 235A, 3.1mΩ
***Yang
Trans MOSFET N-CH 75V 235A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ment14 APAC
MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:235A; Source Voltage Vds:75V; On Resistance
***r Electronics
Power Field-Effect Transistor, 120A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 235A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ical
Trans MOSFET N-CH 75V 260A Automotive 7-Pin(6+Tab) D2PAK T/R
***ernational Rectifier
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package
***el Electronic
Power Field-Effect Transistor, 240A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7
***ure Electronics
N-Channel 60 V 2.4 mO Surface Mount PowerTrench Mosfet - D2PAK-3
***emi
N-Channel PowerTrench® MOSFET 60V, 265A, 2.4mΩ
***Yang
Trans MOSFET N-CH 60V 265A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***r Electronics
Power Field-Effect Transistor, 120A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ark
MOSFET, N-CH, 60V, 293A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
***ical
Trans MOSFET N-CH Si 60V 270A Automotive 3-Pin(2+Tab) D2PAK T/R
***ernational Rectifier
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-PAK Package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon SCT
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
***ineon
Benefits: Advanced Process Technology; Ultra Low On-Resistance; Dynamic dv/dt Rating; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***nell
MOSFET, N-CH, 60V, 293A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:375W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***(Formerly Allied Electronics)
IRFS3107PBF N-channel MOSFET Transistor; 230 A; 75 V; 3-Pin D2PAK
***roFlash
Single N-Channel 75 V 3 mOhm 160 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH Si 75V 230A 3-Pin(2+Tab) D2PAK Tube
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 370 W
***nell
MOSFET, N-CH, 75V, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 230A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.35V; Power D
***p One Stop Global
Trans MOSFET N-CH 80V 229A 7-Pin(6+Tab) D2PAK T/R
***ure Electronics
Single N-Channel 80 V 246 W 178 nC PowerTrench Surface Mount Mosfet - TO-263-7
***emi
N-Channel PowerTrench® MOSFET 80V, 229A, 2.4mΩ
***r Electronics
Power Field-Effect Transistor, 120A I(D), 80V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***el Electronic
Chip Resistor - Surface Mount 16Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 16 OHM 1% 1/10W 0402
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ical
Trans MOSFET N-CH 60V 193A 3-Pin(2+Tab) D2PAK T/R
***emi
N-Channel PowerTrench® MOSFET 60V, 193A, 3.1mΩ
***r Electronics
Power Field-Effect Transistor, 120A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***el Electronic
Chip Resistor - Surface Mount 200kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 200K OHM 1% 1/10W 0402
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Teil # Mfg. Beschreibung Aktie Preis
FDB031N08
DISTI # V72:2272_06300773		ON Semiconductor75V,235A,3.1M OHM,NCH POWER497
  • 250:$3.2100
  • 100:$3.4740
  • 25:$4.1070
  • 10:$4.1090
  • 1:$4.8040
FDB031N08
DISTI # V36:1790_06300773		ON Semiconductor75V,235A,3.1M OHM,NCH POWER0
    FDB031N08
    DISTI # FDB031N08CT-ND    		ON SemiconductorMOSFET N-CH 75V 120A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		1595In Stock
    • 100:$4.3271
    • 10:$5.2770
    • 1:$5.9100
    FDB031N08
    DISTI # FDB031N08DKR-ND    		ON SemiconductorMOSFET N-CH 75V 120A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		1595In Stock
    • 100:$4.3271
    • 10:$5.2770
    • 1:$5.9100
    FDB031N08
    DISTI # FDB031N08TR-ND    		ON SemiconductorMOSFET N-CH 75V 120A D2PAK
    RoHS: Compliant
    Min Qty: 800
    Container: Tape & Reel (TR)    		800In Stock
    • 2400:$2.7256
    • 1600:$2.8690
    • 800:$3.0739
    FDB031N08
    DISTI # 32316888    		ON Semiconductor75V,235A,3.1M OHM,NCH POWER5600
    • 800:$2.9175
    FDB031N08
    DISTI # 31601303    		ON Semiconductor75V,235A,3.1M OHM,NCH POWER497
    • 250:$3.2100
    • 100:$3.5760
    • 25:$4.1070
    • 10:$4.1090
    • 3:$4.8040
    FDB031N08
    DISTI # FDB031N08    		ON SemiconductorTrans MOSFET N-CH 75V 235A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB031N08)
    RoHS: Compliant
    Min Qty: 800
    Container: Reel    		Americas - 0
    • 800:$2.0900
    • 1600:$2.0900
    • 3200:$2.0900
    • 4800:$2.0900
    • 8000:$1.9900
    FDB031N08
    DISTI # 07P9157    		ON SemiconductorFET 75V 3.1 MOHM D2PAK / REEL0
    • 9600:$2.4500
    • 2400:$2.5300
    • 800:$2.7700
    • 1:$2.7900
    FDB031N08
    DISTI # 512-FDB031N08    		ON SemiconductorMOSFET 75V N-Channel PowerTrench
    RoHS: Compliant    		18377
    • 1:$4.9400
    • 10:$4.2000
    • 100:$3.6400
    • 250:$3.4500
    • 500:$3.1000
    FDB031N08ON SemiconductorN-Channel 75 V 3.1 mOhm Surface Mount PowerTrench Mosfet - D2PAK-3
    RoHS: Compliant    		8800Reel
    • 800:$2.2700
    FDB031N08Fairchild Semiconductor Corporation 638
      FDB031N08Fairchild Semiconductor CorporationPower Field-Effect Transistor, 120A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant      		Europe - 298
        FDB031N08
        DISTI # XSFP00000106362        		Fairchild Semiconductor Corporation 
        RoHS: Compliant        		7200 in Stock0 on Order
        • 7200:$4.1300
        • 800:$4.5400
        FDB031N08
        DISTI # 3004020        		ON SemiconductorMOSFET, N-CH, 235A, 75V, TO-263
        RoHS: Compliant        		0
        • 1000:$3.9000
        • 500:$4.2300
        • 250:$4.6200
        • 100:$5.0800
        • 10:$5.6300
        • 1:$6.3400
        Bild Teil # Beschreibung
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        Verfügbarkeit
        Aktie:
        18
        Auf Bestellung:
        2001
        Menge eingeben:
        Der aktuelle Preis von FDB031N08 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        4,94 $
        4,94 $
        10
        4,20 $
        42,00 $
        100
        3,64 $
        364,00 $
        250
        3,45 $
        862,50 $
        500
        3,10 $
        1 550,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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