STB80N20M5

STB80N20M5
Mfr. #:
STB80N20M5
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-Ch 200V 0.019 61A Mdmesh V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STB80N20M5 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STB80N20M5 Mehr Informationen STB80N20M5 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
61 A
Rds On - Drain-Source-Widerstand:
23 mOhms
Vgs th - Gate-Source-Schwellenspannung:
5 V
Vgs - Gate-Source-Spannung:
25 V
Qg - Gate-Ladung:
104 nC
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
190 W
Aufbau:
Single
Handelsname:
MDmesh
Verpackung:
Spule
Serie:
STB80N20M5
Transistortyp:
1 N-Channel
Typ:
N-Kanal MDmesh V Leistungs-MOSFET
Marke:
STMicroelectronics
Vorwärtstranskonduktanz - Min:
1.6 S
Abfallzeit:
176 ns
Produktart:
MOSFET
Anstiegszeit:
31 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
131 ns
Typische Einschaltverzögerungszeit:
66 ns
Gewichtseinheit:
0.139332 oz
Tags
STB80N, STB80, STB8, STB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 200 V 23 mOhm Surface Mount MDmesh™ V Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH Si 200V 61A 3-Pin(2+Tab) D2PAK T/R
***p One Stop Global
Trans MOSFET N-CH 200V 61A 3-Pin(2+Tab) D2PAK T/R
*** Source Electronics
MOSFET N-CH 200V 61A D2PAK
***ponent Sense
MOSFET N-Ch 200V 0.019 61A Mdmesh V
***et
TRANSISTORSPOWER MOSFETSN-CHANNEL (>150V TO 400V)
***ark
Mosfet, N-Ch, 200V, 61A, To-262; Transistor Polarity:n Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.019Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 200V, 61A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:190W; Transistor Case Style:TO-262; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:Mdmesh V Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, CA-N, 200V, 61A, TO-262; Polarità Transistor:Canale N; Corrente Continua di Drain Id:61A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.019ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:190W; Modello Case Transistor:TO-262; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:Mdmesh V Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Teil # Mfg. Beschreibung Aktie Preis
STB80N20M5
DISTI # V79:2366_17793148
STMicroelectronicsTrans MOSFET N-CH Si 200V 61A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
3399
  • 1:$5.1600
STB80N20M5
DISTI # 497-10705-1-ND
STMicroelectronicsMOSFET N-CH 200V 61A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
343In Stock
  • 500:$4.5309
  • 100:$5.4078
  • 10:$6.5770
  • 1:$7.3100
STB80N20M5
DISTI # 497-10705-6-ND
STMicroelectronicsMOSFET N-CH 200V 61A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
343In Stock
  • 500:$4.5309
  • 100:$5.4078
  • 10:$6.5770
  • 1:$7.3100
STB80N20M5
DISTI # 497-10705-2-ND
STMicroelectronicsMOSFET N-CH 200V 61A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 1000:$3.8313
STB80N20M5
DISTI # 26118064
STMicroelectronicsTrans MOSFET N-CH Si 200V 61A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
3399
  • 2:$5.1600
STB80N20M5
DISTI # STB80N20M5
STMicroelectronicsTrans MOSFET N-CH 200V 61A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB80N20M5)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$3.7900
  • 2000:$3.5900
  • 4000:$3.4900
  • 6000:$3.2900
  • 10000:$3.1900
STB80N20M5
DISTI # 51AC9539
STMicroelectronicsMOSFET, N-CH, 200V, 61A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:61A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes874
  • 1:$5.4900
  • 10:$4.8400
  • 25:$4.4400
  • 50:$4.0100
  • 100:$3.4900
  • 250:$2.7700
  • 500:$2.6300
  • 1000:$2.4700
STB80N20M5
DISTI # 511-STB80N20M5
STMicroelectronicsMOSFET N-Ch 200V 0.019 61A Mdmesh V
RoHS: Compliant
0
  • 1000:$3.4800
STB80N20M5
DISTI # 2849650
STMicroelectronicsMOSFET, N-CH, 200V, 61A, TO-262
RoHS: Compliant
904
  • 1:£6.2500
  • 10:£5.1500
  • 100:£4.2300
  • 250:£3.8900
  • 500:£3.5400
STB80N20M5
DISTI # 2849650
STMicroelectronicsMOSFET, N-CH, 200V, 61A, TO-262
RoHS: Compliant
874
  • 1:$11.6600
  • 10:$10.4900
  • 100:$8.6200
  • 500:$7.2300
STB80N20M5
DISTI # C1S730200656001
STMicroelectronicsTrans MOSFET N-CH Si 200V 61A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
3399
  • 500:$4.5550
  • 100:$4.9150
  • 10:$5.7820
  • 1:$6.3300
Bild Teil # Beschreibung
STB80NF55L-06T4

Mfr.#: STB80NF55L-06T4

OMO.#: OMO-STB80NF55L-06T4

MOSFET N-Ch, 55V-0.005ohms 80A
STB80N06-10

Mfr.#: STB80N06-10

OMO.#: OMO-STB80N06-10-1190

Neu und Original
STB80N4F6AG

Mfr.#: STB80N4F6AG

OMO.#: OMO-STB80N4F6AG-STMICROELECTRONICS

MOSFET N-CH 40V 80A D2PAK
STB80NE03

Mfr.#: STB80NE03

OMO.#: OMO-STB80NE03-1190

Neu und Original
STB80NF03L041

Mfr.#: STB80NF03L041

OMO.#: OMO-STB80NF03L041-1190

Power Field-Effect Transistor, 80A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
STB80NF10T4

Mfr.#: STB80NF10T4

OMO.#: OMO-STB80NF10T4-STMICROELECTRONICS

MOSFET N-CH 100V 80A D2PAK
STB80NF50

Mfr.#: STB80NF50

OMO.#: OMO-STB80NF50-1190

Neu und Original
STB80NF55L-08-1

Mfr.#: STB80NF55L-08-1

OMO.#: OMO-STB80NF55L-08-1-STMICROELECTRONICS

MOSFET N-CH 55V 80A I2PAK
STB80NF55L-08T4

Mfr.#: STB80NF55L-08T4

OMO.#: OMO-STB80NF55L-08T4-1190

MOSFET N-Ch 55 Volt 80 Amp
STB80PF55T4

Mfr.#: STB80PF55T4

OMO.#: OMO-STB80PF55T4-STMICROELECTRONICS

MOSFET P-CH 55V 80A D2PAK
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von STB80N20M5 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
6,13 $
6,13 $
10
5,54 $
55,40 $
25
5,29 $
132,25 $
100
4,59 $
459,00 $
250
4,38 $
1 095,00 $
500
3,99 $
1 995,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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