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IPI100N10S305AKSA1

IPI100N10S305AKSA1
Mfr. #:
IPI100N10S305AKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 100V 100A TO262-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPI100N10S305AKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPI100N10S305AKSA1 DatasheetIPI100N10S305AKSA1 Datasheet (P4-P6)IPI100N10S305AKSA1 Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IPI100N10, IPI100N1, IPI100N, IPI10, IPI1, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
100V, N-Ch, 5.1 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™-T, PG-TO262-3-3, RoHS
***et
Transistor MOSFET Power N-CH 100V 100A 3-PIN PG-TO-262
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting
***icroelectronics
N-channel 100 V, 0.0036 Ohm typ., 110 A STripFET F7 Power MOSFET in I2PAK package
***ical
Trans MOSFET N-CH 100V 110A 3-Pin(3+Tab) I2PAK Tube
***el Electronic
IC INTFACE SPECIALIZED 36VFQFPN
***icroelectronics SCT
Power MOSFETs, 100V, 110A, I2PAK, Tube
***ure Electronics
Single N-Channel 120 V 4.1 mOhm 158 nC OptiMOS™ Power Mosfet - TO-262-3
***ical
Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:120V; Continuous Drain Current Id:120A; On Resistance Rds(On):0.0041Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Msl:- Rohs Compliant: Yes
***ineon SCT
The 120V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications, PG-TO262-3-3, RoHS
***ineon
The 120V OptiMOS family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS technology gives new possibilites for optimized solutions. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
***ical
Trans MOSFET N-CH 80V 100A Automotive 3-Pin(3+Tab) TO-262 Tube
***ponent Stockers USA
100 A 80 V 0.00375 ohm N-CHANNEL Si POWER MOSFET TO-262AA
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 4700pF 50Volts 5%
***ineon SCT
OptiMOS™ is the market leader in highly efficient solutions for power generation (e, PG-TO262-3-3, RoHS
***i-Key
OPTLMOS N-CHANNEL POWER MOSFET
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
***ser
Power MOSFET Transistors N Ch 100V 0.019Ohm 80A
***r Electronics
Power Field-Effect Transistor, 80A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***el Electronic
CAP CER 0.068UF 50V C0G 1210
***ser
MOSFETs 75V N-Ch PowerTrench MOSFET
***i-Key
MOSFET N-CH 75V 80A TO-262AB
***Yang
Regulated Step-Down Charge Pump DC/DC Converter - Bulk
***-Wing Technology
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***ineon SCT
75V, N-Ch, 7.1 mΩ max, Automotive MOSFET, TO-220, OptiMOS™, PG-TO220-3, RoHS
***ical
Trans MOSFET N-CH 75V 100A 3-Pin(3+Tab) TO-220AB
***ineon
Summary of Features: N-channel Logic Level - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 75V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
Teil # Mfg. Beschreibung Aktie Preis
IPI100N10S305AKSA1
DISTI # IPI100N10S305AKSA1-ND		Infineon Technologies AGMOSFET N-CH 100V 100A TO262-3
RoHS: Compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
  • 500:$2.4606
IPI100N10S305XK
DISTI # IPI100N10S305AKSA1		Infineon Technologies AGTrans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI100N10S305AKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 5000:$1.6900
  • 2000:$1.7900
  • 3000:$1.7900
  • 1000:$1.8900
  • 500:$1.9900
IPI100N10S3-05
DISTI # 726-IPI100N10S305		Infineon Technologies AGMOSFET N-Ch 100V 100A I2PAK-3 OptiMOS-T
RoHS: Compliant		439
  • 1:$3.7300
  • 10:$3.1700
  • 100:$2.7500
  • 250:$2.6100
  • 500:$2.3400
  • 1000:$1.9700
  • 2500:$1.8700
IPI100N10S305AKSA1Infineon Technologies AGPower Field-Effect Transistor, 100A I(D), 100V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Compliant		20500
  • 1000:$1.4700
  • 500:$1.5500
  • 100:$1.6200
  • 25:$1.6800
  • 1:$1.8100
Bild Teil # Beschreibung
IPI100N10S3-05

Mfr.#: IPI100N10S3-05

OMO.#: OMO-IPI100N10S3-05

 MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS-T
IPI100N10S305XK

Mfr.#: IPI100N10S305XK

OMO.#: OMO-IPI100N10S305XK-1190

 Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI100N10S305AKSA1)
IPI100N10S305AKSA1

Mfr.#: IPI100N10S305AKSA1

OMO.#: OMO-IPI100N10S305AKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V 100A TO262-3
IPI100N10S3-05

Mfr.#: IPI100N10S3-05

OMO.#: OMO-IPI100N10S3-05-317

 RF Bipolar Transistors MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS-T
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von IPI100N10S305AKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,20 $
2,20 $
10
2,09 $
20,95 $
100
1,98 $
198,45 $
500
1,87 $
937,15 $
1000
1,76 $
1 764,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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