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DF650R17IE4BOSA1

DF650R17IE4BOSA1
Mfr. #:
DF650R17IE4BOSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOD IGBT 650A PRIME2-1
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DF650R17IE4BOSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
DF650R, DF650, DF65, DF6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
IGBT Module N-CH 1700V 650A 10-pin PRIME2-1
***i-Key
MOD IGBT 650A PRIME2-1
***ark
IGBT Module; Transistor Polarity:N Channel; DC Collector Current:650A; Collector Emitter Voltage Vces:1.7kV; Power Dissipation Pd:4.15kW; Collector Emitter Voltage V(br)ceo:1.7kV; Operating Temperature Range:-40°C to +150°C ;RoHS Compliant: Yes
***nell
IGBT,HI PO,CHOP NTC,1700V,650A,PRIMEP; Transistor Polarity:N Channel; DC Collector Current:650A; Collector Emitter Voltage Vces:2V; Power Dissipation Max:4.15kW; Collector Emitter Voltage V(br)ceo:1.7kV; Operating Temperature Range:-40°C to +150°C; No. of Pins:10
***ineon
1700V PrimePACK2 chopper IGBT module with IGBT4 and NTC. | Summary of Features: Extended Operation Temperature T(tvj op); High DC Stability; High Current Density; Low Switching Losses; V(vj op) = 150C; Low V(cesat); Package with CTI > 400; High Creepage and Clearance Distances; High Power and Thermal Cycling Capability; Copper Base Plate; UL recognized | Benefits: High Power Density; Standardized housing | Target Applications: drives; wind; solar; cav; ups
***ment14 APAC
Prices include import duty and tax. IGBT, HI PO, CHOP NTC, 1700V, 650A; Transistor Polarity:N Channel; DC Collector Current:650A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:4.15kW; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor Case Style:Module; No. of Pins:10Pins; Operating Temperature Max:150°C; Product Range:-; SVHC:No SVHC (12-Jan-2017); Module Configuration:Single; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +150°C; Power Dissipation Max:4.15kW
Teil # Mfg. Beschreibung Aktie Preis
DF650R17IE4BOSA1
DISTI # DF650R17IE4BOSA1-ND		Infineon Technologies AGMOD IGBT 650A PRIME2-1
RoHS: Compliant
Min Qty: 3
Container: Tray		Temporarily Out of Stock
  • 3:$385.3367
DF650R17IE4BOSA1
DISTI # DF650R17IE4BOSA1		Infineon Technologies AGIGBT Module N-CH 1700V 650A 10-pin PRIME2-1 - Trays (Alt: DF650R17IE4BOSA1)
RoHS: Compliant
Min Qty: 3
Container: Tray		Americas - 0
    DF650R17IE4BOSA1
    DISTI # DF650R17IE4BOSA1    		Infineon Technologies AGIGBT Module N-CH 1700V 650A 10-pin PRIME2-1 - Bulk (Alt: DF650R17IE4BOSA1)
    Min Qty: 1
    Container: Bulk    		Americas - 0
    • 1000:$343.4900
    • 500:$349.7900
    • 100:$361.8900
    • 50:$375.4900
    • 25:$380.7900
    • 10:$386.2900
    • 1:$391.7900
    DF650R17IE4
    DISTI # 641-DF650R17IE4    		Infineon Technologies AGIGBT Modules IGBT MODULES 1700V 650A3
    • 1:$391.1600
    • 5:$367.5900
    DF650R17IE4BOSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 930A I(C), 1700V V(BR)CES, N-Channel
    RoHS: Compliant    		39
    • 1000:$355.8000
    • 500:$374.5300
    • 100:$389.9200
    • 25:$406.6300
    • 1:$437.9100
    Bild Teil # Beschreibung
    DF650R17IE4

    Mfr.#: DF650R17IE4

    OMO.#: OMO-DF650R17IE4

    		 IGBT Modules IGBT MODULES 1700V 650A
    DF650R17IE4BOSA1

    Mfr.#: DF650R17IE4BOSA1

    OMO.#: OMO-DF650R17IE4BOSA1-INFINEON-TECHNOLOGIES

    		 MOD IGBT 650A PRIME2-1
    DF650R17IE4D_B2

    Mfr.#: DF650R17IE4D_B2

    OMO.#: OMO-DF650R17IE4D-B2-125

    		 IGBT Modules
    DF650R17IE4

    Mfr.#: DF650R17IE4

    OMO.#: OMO-DF650R17IE4-125

    		 IGBT Modules IGBT MODULES 1700V 650A
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von DF650R17IE4BOSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    471,45 $
    471,45 $
    10
    447,88 $
    4 478,78 $
    100
    424,30 $
    42 430,50 $
    500
    400,73 $
    200 366,25 $
    1000
    377,16 $
    377 160,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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