IXTH14N100

IXTH14N100
Mfr. #:
IXTH14N100
Hersteller:
IXYS
Beschreibung:
MOSFET 14 Amps 1000V 0.82 Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTH14N100 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTH14N100 Datasheet
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
FETs - Einzeln
Serie
IXTH14N100
Verpackung
Rohr
Gewichtseinheit
0.229281 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-247-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
360 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
36 ns
Anstiegszeit
21 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
14 A
Vds-Drain-Source-Breakdown-Voltage
1000 V
Rds-On-Drain-Source-Widerstand
820 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
80 ns
Typische-Einschaltverzögerungszeit
24 ns
Kanal-Modus
Erweiterung
Tags
IXTH14, IXTH1, IXTH, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 1000V 14A TO-247
***omponent
IXYS power module
***ment14 APAC
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):700mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:360W; Transistor Case Style:TO-247; No. of Pins:3; Current Id Max:14A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:820mohm; Package / Case:TO-247; Power Dissipation Pd:360W; Power Dissipation Pd:360W; Pulse Current Idm:56A; Termination Type:Through Hole; Voltage Vds Typ:1kV; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V
Teil # Mfg. Beschreibung Aktie Preis
IXTH14N100
DISTI # IXTH14N100-ND
IXYS CorporationMOSFET N-CH 1000V 14A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$15.0183
IXTH14N100
DISTI # 747-IXTH14N100
IXYS CorporationMOSFET 14 Amps 1000V 0.82 Rds
RoHS: Compliant
0
    IXTH14N100IXYS Corporation 284
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4000
    Menge eingeben:
    Der aktuelle Preis von IXTH14N100 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    22,53 $
    22,53 $
    10
    21,40 $
    214,01 $
    100
    20,27 $
    2 027,47 $
    500
    19,15 $
    9 574,20 $
    1000
    18,02 $
    18 022,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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