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STGWT20H65FB

STGWT20H65FB
Mfr. #:
STGWT20H65FB
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors IGBT & Power Bipola
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGWT20H65FB Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGWT20H65FB Mehr Informationen STGWT20H65FB Product Details
Produkteigenschaft
Attributwert
Hersteller
STMicroelectronics
Produktkategorie
IGBTs - Single
Serie
600-650V IGBTs
Verpackung
Rohr
Gewichtseinheit
0.238311 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-3P-3, SC-65-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-3P
Aufbau
Single
Leistung max
168W
Reverse-Recovery-Time-trr
-
Strom-Kollektor-Ic-Max
40A
Spannungs-Kollektor-Emitter-Breakdown-Max
650V
IGBT-Typ
Grabenfeldstopp
Strom-Kollektor-gepulster-Icm
80A
Vce-on-Max-Vge-Ic
2V @ 15V, 20A
Schaltenergie
77μJ (on), 170μJ (off)
Gate-Gebühr
120nC
Td-ein-aus-25°C
30ns/139ns
Testbedingung
400V, 20A, 10 Ohm, 15V
Pd-Verlustleistung
168 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
650 V
Kollektor-Emitter-Sättigungsspannung
1.55 V
Kontinuierlicher Kollektorstrom-bei-25-C
40 A
Gate-Emitter-Leckstrom
250 nA
Maximale Gate-Emitter-Spannung
20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
20 A
Tags
STGWT20H, STGWT20, STGWT2, STGWT, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Chip N-CH 650V 40A 3-Pin TO-3P Tube
***i-Key
IGBT 650V 40A 168W TO3P
***ark
Igbt, Single, 650V, 40A, To-3P; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):1.55V; Power Dissipation Pd:168W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-3P; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 650V, 40A, TO-3P; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:168W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3P; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018)
***nell
IGBT, SINGOLO, 650V, 40A, TO-3P; Corrente di Collettore CC:40A; Tensione Saturaz Collettore-Emettitore Vce(on):1.55V; Dissipazione di Potenza Pd:168W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-3P; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HB Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
Teil # Mfg. Beschreibung Aktie Preis
STGWT20H65FB
DISTI # 497-15139-5-ND		STMicroelectronicsIGBT 650V 40A 168W TO3P
RoHS: Compliant
Min Qty: 1
Container: Tube		289In Stock
  • 1020:$2.1021
  • 510:$2.4925
  • 120:$2.9279
  • 30:$3.3783
  • 1:$3.9800
STGWT20H65FB
DISTI # STGWT20H65FB		STMicroelectronicsTrans IGBT Chip N-CH 650V 40A 3-Pin TO-3P Tube (Alt: STGWT20H65FB)
RoHS: Compliant
Min Qty: 30
Container: Tube		Europe - 300
  • 30:€1.6900
  • 60:€1.3900
  • 120:€1.2900
  • 180:€1.1900
  • 300:€1.0900
STGWT20H65FB
DISTI # STGWT20H65FB		STMicroelectronicsTrans IGBT Chip N-CH 650V 40A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT20H65FB)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 600:$2.0900
  • 1200:$1.9900
  • 1800:$1.8900
  • 3000:$1.7900
  • 6000:$1.7900
STGWT20H65FB
DISTI # 61AC2100		STMicroelectronicsIGBT, SINGLE, 650V, 40A, TO-3P,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):1.55V,Power Dissipation Pd:168W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-3P,No. of Pins:3Pins,RoHS Compliant: Yes300
  • 5000:$1.2700
  • 2500:$1.3100
  • 1000:$1.6100
  • 500:$1.8000
  • 100:$1.9500
  • 10:$2.4300
  • 1:$2.8600
STGWT20H65FB
DISTI # 511-STGWT20H65FB		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
RoHS: Compliant		0
  • 600:$2.6500
STGWT20H65FBSTMicroelectronics 300
    STGWT20H65FB
    DISTI # 2889927    		STMicroelectronicsIGBT, SINGLE, 650V, 40A, TO-3P
    RoHS: Compliant    		300
    • 1020:$3.3600
    • 510:$3.9800
    • 120:$4.6700
    • 30:$5.3900
    • 1:$6.3500
    STGWT20H65FB
    DISTI # 2889927    		STMicroelectronicsIGBT, SINGLE, 650V, 40A, TO-3P
    RoHS: Compliant    		300
    • 500:£1.9500
    • 250:£2.1200
    • 100:£2.2900
    • 10:£2.6400
    • 1:£3.4800
    Bild Teil # Beschreibung
    STGWT20HP65FB

    Mfr.#: STGWT20HP65FB

    OMO.#: OMO-STGWT20HP65FB

    		 IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
    STGWT20H60DF

    Mfr.#: STGWT20H60DF

    OMO.#: OMO-STGWT20H60DF

    		 IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
    STGWT20IH125DF

    Mfr.#: STGWT20IH125DF

    OMO.#: OMO-STGWT20IH125DF

    		 IGBT Transistors 1250V 20A trench gte field-stop IGBT
    STGWT20V60DF

    Mfr.#: STGWT20V60DF

    OMO.#: OMO-STGWT20V60DF

    		 IGBT Transistors 600V 20A High Speed Trench Gate IGBT
    STGWT20H65FB

    Mfr.#: STGWT20H65FB

    OMO.#: OMO-STGWT20H65FB

    		 IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
    STGWT28IH125DF

    Mfr.#: STGWT28IH125DF

    OMO.#: OMO-STGWT28IH125DF

    		 IGBT Transistors 1250V 25A trench gte field-stop IGBT
    STGWT20IH125DF

    Mfr.#: STGWT20IH125DF

    OMO.#: OMO-STGWT20IH125DF-STMICROELECTRONICS

    		 IGBT Transistors 1250V 20A trench gte field-stop IGBT
    STGWT20V60DF

    Mfr.#: STGWT20V60DF

    OMO.#: OMO-STGWT20V60DF-STMICROELECTRONICS

    		 IGBT Transistors 600V 20A High Speed Trench Gate IGBT
    STGWT20H65FB

    Mfr.#: STGWT20H65FB

    OMO.#: OMO-STGWT20H65FB-STMICROELECTRONICS

    		 IGBT Transistors IGBT & Power Bipola
    STGWT20HP65FB

    Mfr.#: STGWT20HP65FB

    OMO.#: OMO-STGWT20HP65FB-STMICROELECTRONICS

    		 STMSTGWT20HP65FB (Alt: STGWT20HP65FB)
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3500
    Menge eingeben:
    Der aktuelle Preis von STGWT20H65FB dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,68 $
    2,68 $
    10
    2,55 $
    25,51 $
    100
    2,42 $
    241,65 $
    500
    2,28 $
    1 141,15 $
    1000
    2,15 $
    2 148,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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