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IXYT30N65C3H1HV

IXYT30N65C3H1HV
Mfr. #:
IXYT30N65C3H1HV
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors 650V/60A XPT Copacked TO-268HV
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXYT30N65C3H1HV Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IXYT30N65C3H1HV Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
IGBTs - Single
Serie
GenX3, XPT
Verpackung
Rohr
Montageart
Durchgangsloch
Handelsname
XPT
Paket-Koffer
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Eingabetyp
Standard
Befestigungsart
Oberflächenmontage
Lieferanten-Geräte-Paket
TO-268
Aufbau
Single
Leistung max
270W
Reverse-Recovery-Time-trr
120ns
Strom-Kollektor-Ic-Max
60A
Spannungs-Kollektor-Emitter-Breakdown-Max
650V
IGBT-Typ
PT
Strom-Kollektor-gepulster-Icm
118A
Vce-on-Max-Vge-Ic
2.7V @ 15V, 30A
Schaltenergie
1mJ (on), 270μJ (off)
Gate-Gebühr
44nC
Td-ein-aus-25°C
21ns/75ns
Testbedingung
400V, 30A, 10 Ohm, 15V
Pd-Verlustleistung
270 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
650 V
Kollektor-Emitter-Sättigungsspannung
2.35 V
Kontinuierlicher Kollektorstrom-bei-25-C
60 A
Gate-Emitter-Leckstrom
100 nA
Maximale Gate-Emitter-Spannung
30 V
Kontinuierlicher Kollektor-Strom-Ic-Max
60 A
Tags
IXYT, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IGBT 650V 60A 270W TO268HV
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IXYT30N65C3H1HV
DISTI # IXYT30N65C3H1HV-ND		IXYS CorporationIGBT 650V 60A 270W TO268HV
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$6.0917
IXYT30N65C3H1HV
DISTI # 747-IXYT30N65C3H1HV		IXYS CorporationIGBT Transistors 650V/60A XPT Copacked TO-268HV
RoHS: Compliant		9
  • 1:$7.4300
  • 10:$6.6900
  • 25:$6.0900
  • 50:$5.5700
  • 100:$5.5000
  • 250:$5.0100
  • 500:$4.6100
  • 1000:$4.0100
Bild Teil # Beschreibung
IXYT30N65C3H1HV

Mfr.#: IXYT30N65C3H1HV

OMO.#: OMO-IXYT30N65C3H1HV

 IGBT Transistors 650V/60A XPT Copacked TO-268HV
IXYT30N450HV

Mfr.#: IXYT30N450HV

OMO.#: OMO-IXYT30N450HV

 IGBT Transistors DISC IGBT XPT-HI VOLTAGE
IXYT30N450HV

Mfr.#: IXYT30N450HV

OMO.#: OMO-IXYT30N450HV-IXYS-CORPORATION

 High Voltage XPTTMIGBT
IXYT30N65C3H1HV

Mfr.#: IXYT30N65C3H1HV

OMO.#: OMO-IXYT30N65C3H1HV-IXYS-CORPORATION

 IGBT Transistors 650V/60A XPT Copacked TO-268HV
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von IXYT30N65C3H1HV dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
6,02 $
6,02 $
10
5,71 $
57,14 $
100
5,41 $
541,35 $
500
5,11 $
2 556,40 $
1000
4,81 $
4 812,00 $
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