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SPD06N60C3ATMA1

SPD06N60C3ATMA1
Mfr. #:
SPD06N60C3ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET LOW POWER_LEGACY
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SPD06N60C3ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SPD06N60C3ATMA1 DatasheetSPD06N60C3ATMA1 Datasheet (P4-P6)SPD06N60C3ATMA1 Datasheet (P7-P9)SPD06N60C3ATMA1 Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
6.2 A
Rds On - Drain-Source-Widerstand:
680 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
31 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
74 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Serie:
CoolMOS C3
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
5.6 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
12 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
52 ns
Typische Einschaltverzögerungszeit:
7 ns
Teil # Aliase:
SP001117770 SPD06N60C3
Gewichtseinheit:
0.139332 oz
Tags
SPD06N6, SPD06, SPD0, SPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***k
    S***k
    RU

    ok

    2019-06-22
    D***v
    D***v
    RU

    Ordered with brazed contacts came parts

    2019-06-26
Teil # Mfg. Beschreibung Aktie Preis
SPD06N60C3ATMA1
DISTI # V72:2272_06383796		Infineon Technologies AGTrans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2450
  • 1000:$0.8304
  • 500:$1.0037
  • 250:$1.1658
  • 100:$1.1779
  • 25:$1.4788
  • 10:$1.4938
  • 1:$1.9501
SPD06N60C3ATMA1
DISTI # V36:1790_06383796		Infineon Technologies AGTrans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
  • 2500000:$0.7396
  • 1250000:$0.7399
  • 250000:$0.7787
  • 25000:$0.8524
  • 2500:$0.8650
SPD06N60C3ATMA1
DISTI # SPD06N60C3ATMA1-ND		Infineon Technologies AGMOSFET N-CH 600V 6.2A TO-252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
  • 2500:$0.8650
SPD06N60C3ATMA1
DISTI # 32892568		Infineon Technologies AGTrans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 10000:$0.7554
  • 5000:$0.7861
  • 2500:$0.8158
SPD06N60C3ATMA1
DISTI # 30530437		Infineon Technologies AGTrans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2450
  • 1000:$0.8304
  • 500:$1.0037
  • 250:$1.1658
  • 100:$1.1779
  • 25:$1.4788
  • 10:$1.4938
  • 9:$1.9501
SPD06N60C3ATMA1
DISTI # SPD06N60C3ATMA1		Infineon Technologies AGTrans MOSFET N-CH 600(Min)V 6.2A 3-Pin TO-252 T/R - Tape and Reel (Alt: SPD06N60C3ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.7749
  • 15000:$0.7889
  • 10000:$0.8159
  • 5000:$0.8469
  • 2500:$0.8789
SPD06N60C3ATMA1
DISTI # SP001117770		Infineon Technologies AGTrans MOSFET N-CH 600(Min)V 6.2A 3-Pin TO-252 T/R (Alt: SP001117770)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.6769
  • 15000:€0.7249
  • 10000:€0.7809
  • 5000:€0.8459
  • 2500:€1.0159
SPD06N60C3ATMA1
DISTI # 33P8207		Infineon Technologies AGMOSFET, N CHANNEL, 650V, 6.2A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:6.2A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.68ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    SPD06N60C3ATMA1
    DISTI # 726-SPD06N60C3ATMA1    		Infineon Technologies AGMOSFET LOW POWER_LEGACY
    RoHS: Compliant    		7580
    • 1:$1.7900
    • 10:$1.5200
    • 100:$1.2200
    • 500:$1.0600
    • 1000:$0.8850
    • 2500:$0.8240
    • 5000:$0.7940
    • 10000:$0.7630
    SPD06N60C3ATMA1
    DISTI # 1664109RL    		Infineon Technologies AGMOSFET, N, TO-252
    RoHS: Compliant    		0
    • 5000:$1.2600
    • 1000:$1.2900
    • 500:$1.4500
    • 250:$1.5400
    • 100:$1.6400
    • 25:$2.0600
    • 5:$2.2600
    SPD06N60C3ATMA1
    DISTI # 1664109    		Infineon Technologies AGMOSFET, N, TO-252
    RoHS: Compliant    		0
    • 5000:$1.2600
    • 1000:$1.2900
    • 500:$1.4500
    • 250:$1.5400
    • 100:$1.6400
    • 25:$2.0600
    • 5:$2.2600
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1990
    Menge eingeben:
    Der aktuelle Preis von SPD06N60C3ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,79 $
    1,79 $
    10
    1,52 $
    15,20 $
    100
    1,22 $
    122,00 $
    500
    1,06 $
    530,00 $
    1000
    0,88 $
    885,00 $
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