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SISS06DN-T1-GE3

SISS06DN-T1-GE3
Mfr. #:
SISS06DN-T1-GE3
Hersteller:
Vishay
Beschreibung:
N-Channel 30 V (D-S) MOSFET PowerPAK 1212-8S 1G SG 2 mil , 1.38 m @ 10V m @ 7.5V 2.03 m @ 4.5V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISS06DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SISS06DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SISS0, SISS, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SISS06DN-T1-GE3
DISTI # V72:2272_22759348		Vishay IntertechnologiesN-Channel 30 V (D-S) MOSFET PowerPAK 1212-8S 1G SG 2 mil , 1.38 m @ 10Vm @ 7.5V 2.03 m @ 4.5V0
    SISS06DN-T1-GE3
    DISTI # SISS06DN-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CHAN 30 V POWERPAK 1212
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		50In Stock
    • 1000:$0.5353
    • 500:$0.6781
    • 100:$0.8209
    • 10:$1.0530
    • 1:$1.1800
    SISS06DN-T1-GE3
    DISTI # SISS06DN-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CHAN 30 V POWERPAK 1212
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		50In Stock
    • 1000:$0.5353
    • 500:$0.6781
    • 100:$0.8209
    • 10:$1.0530
    • 1:$1.1800
    SISS06DN-T1-GE3
    DISTI # SISS06DN-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CHAN 30 V POWERPAK 1212
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 15000:$0.4435
    • 6000:$0.4608
    • 3000:$0.4851
    SISS06DN-T1-GE3
    DISTI # SISS06DN-T1-GE3    		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SISS06DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel    		Americas - 0
    • 60000:$0.4229
    • 30000:$0.4339
    • 18000:$0.4469
    • 12000:$0.4659
    • 6000:$0.4799
    SISS06DN-T1-GE3
    DISTI # 99AC9587    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 172.6A, 150DEG C,Transistor Polarity:N Channel,Continuous Drain Current Id:172.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.00115ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes50
    • 500:$0.6340
    • 250:$0.6860
    • 100:$0.7370
    • 50:$0.8120
    • 25:$0.8860
    • 10:$0.9610
    • 1:$1.1600
    SISS06DN-T1-GE3
    DISTI # 81AC3499    		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET0
    • 10000:$0.4200
    • 6000:$0.4290
    • 4000:$0.4460
    • 2000:$0.4950
    • 1000:$0.5450
    • 1:$0.5680
    SISS06DN-T1-GE3
    DISTI # 78-SISS06DN-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds,20/-16V Vgs PowerPAK 1212-8S
    RoHS: Compliant    		40
    • 1:$1.1500
    • 10:$0.9510
    • 100:$0.7300
    • 500:$0.6280
    • 1000:$0.4950
    • 3000:$0.4620
    • 6000:$0.4390
    • 9000:$0.4230
    SISS06DN-T1-GE3
    DISTI # 3019137    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 172.6A, 150DEG C
    RoHS: Compliant    		50
    • 5000:$0.7440
    • 1000:$0.7490
    • 500:$0.9250
    • 250:$1.0200
    • 100:$1.1200
    • 25:$1.4200
    • 5:$1.5600
    SISS06DN-T1-GE3
    DISTI # 3019137    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 172.6A, 150DEG C50
    • 500:£0.4550
    • 250:£0.4920
    • 100:£0.5290
    • 10:£0.7430
    • 1:£0.9470
    Bild Teil # Beschreibung
    SISS06DN-T1-GE3

    Mfr.#: SISS06DN-T1-GE3

    OMO.#: OMO-SISS06DN-T1-GE3

    		 MOSFET 30V Vds; 20/-16V Vgs PowerPAK 1212-8S
    SISS06DN-T1-GE3

    Mfr.#: SISS06DN-T1-GE3

    OMO.#: OMO-SISS06DN-T1-GE3-VISHAY

    		 N-Channel 30 V (D-S) MOSFET PowerPAK 1212-8S 1G SG 2 mil , 1.38 m @ 10V m @ 7.5V 2.03 m @ 4.5V
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4500
    Menge eingeben:
    Der aktuelle Preis von SISS06DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,63 $
    0,63 $
    10
    0,60 $
    6,03 $
    100
    0,57 $
    57,11 $
    500
    0,54 $
    269,65 $
    1000
    0,51 $
    507,60 $
    Beginnen mit
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