FDP79N15

FDP79N15
Mfr. #:
FDP79N15
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 150V NCH MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDP79N15 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDP79N15 DatasheetFDP79N15 Datasheet (P4-P6)FDP79N15 Datasheet (P7-P9)FDP79N15 Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
150 V
Id - Kontinuierlicher Drainstrom:
79 A
Rds On - Drain-Source-Widerstand:
30 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
463 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
16.3 mm
Länge:
10.67 mm
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
46 S
Abfallzeit:
38 ns
Produktart:
MOSFET
Anstiegszeit:
200 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
55 ns
Typische Einschaltverzögerungszeit:
20 ns
Gewichtseinheit:
0.090478 oz
Tags
FDP7, FDP
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 150V 79A TO-220
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:79A; On Resistance, Rds(on):0.03ohm; Rds(on) Test Voltage, Vgs:5V; Threshold Voltage, Vgs Typ:30V RoHS Compliant: Yes
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:79A; Resistance, Rds On:0.03ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Capacitance, Ciss Typ:2620pF; Case Style, Alternate:SOT-78B; Current, Idm Pulse:316A; Pin Configuration:G(1),D(2)S(3); Pins, No. of:3; Power, Pd:463W; Resistance, Rds on Max:0.03ohm; Resistance, Rds on Typ.:0.025ohm; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:0.27°C/W; Voltage, Rds Measurement:10V; Voltage, Vds Max:150V; Voltage, Vgs th Max:5V; Voltage, Vgs th Min:3V
Teil # Mfg. Beschreibung Aktie Preis
FDP79N15
DISTI # FDP79N15-ND
ON SemiconductorMOSFET N-CH 150V 79A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube
Limited Supply - Call
    FDP79N15
    DISTI # 512-FDP79N15
    ON SemiconductorMOSFET 150V NCH MOSFET
    RoHS: Compliant
    0
      FDP79N15Fairchild Semiconductor CorporationPower Field-Effect Transistor, 79A I(D), 150V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant
      6112
      • 1000:$3.2600
      • 500:$3.4400
      • 100:$3.5800
      • 25:$3.7300
      • 1:$4.0200
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      Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4500
      Menge eingeben:
      Der aktuelle Preis von FDP79N15 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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