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IRFI520NPBF

IRFI520NPBF
Mfr. #:
IRFI520NPBF
Hersteller:
IR/
Beschreibung:
MOSFET, 100V, 7.2A, 200 MOHM, 16.7 NC QG, TO-220 FULLPACK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFI520NPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IR/
Produktkategorie
IC-Chips
Tags
IRFI520N, IRFI52, IRFI5, IRFI, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
***(Formerly Allied Electronics)
MOSFET, 100V, 7.2A, 200 MOHM, 16.7 NC QG, TO-220 FULLPACK
***et
Trans MOSFET N-CH 100V 7.6A 3-Pin(3+Tab) TO-220FP
***ment14 APAC
MOSFET, N, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:30W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.6A; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:30W; Power Dissipation Pd:30W; Pulse Current Idm:38A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.2Ohm;ID 9.7A;TO-220AB;PD 48W;VGS +/-20V
***ure Electronics
Single N-Channel 100 V 0.2 Ohm 25 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 100V 9.7A 3-Pin(3+Tab) TO-220AB Tube
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:9.7A; Current Temperature:25°C; Device Marking:IRF520N; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:47W; Power Dissipation Pd:47W; Pulse Current Idm:38A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***itex
Transistor: N-MOSFET; unipolar; 100V; 9.2A; 0.2ohm; 45W; -55+175 deg.C; THT; TO220
***ure Electronics
Single N-Channel 100 V 0.27 Ohms Flange Mount Power Mosfet - TO-220-3
*** Source Electronics
Trans MOSFET N-CH 100V 9.2A 3-Pin(3+Tab) TO-220AB / MOSFET N-CH 100V 9.2A TO-220AB
***enic
100V 9.2A 270m´Î@10V5.5A 60W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***roFlash
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 100V, 9.2A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.2A; Junction to Case Thermal Resistance A:2.5°C/W; Package / Case:TO-220AB; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:37A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
IRF510PBF N-channel MOSFET Transistor; 5.6 A; 100 V; 3-Pin TO-220AB
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Flange Mount Power Mosfet - TO-220-3
*** electronic
Transistor MOSFET N-Ch. 5,6A/100V TO220
***ical
Trans MOSFET N-CH 100V 5.6A 3-Pin (3+Tab) TO-220AB
***nsix Microsemi
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, 100V, 5.6A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.6A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 43W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 5.6A; Junction to Case Thermal Resistance A: 3.5°C/W; Pulse Current Idm: 20A; Termination Type: Through Hole; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
***ure Electronics
Single N-Channel 100 V 0.16 Ohms Flange Mount Power Mosfet - TO-220-3
*** electronic
Transistor MOSFET N-Ch. 16A/100V TO220
***et
Trans MOSFET N-CH 100V 14A 3-Pin (3+Tab) TO-220AB
***enic
100V 14A 88W 160m´Î@10V8.4A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 100V, 14A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:100V; On Resistance Rds(on):160mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:14A; Junction to Case Thermal Resistance A:1.7°C/W; Package / Case:TO-220AB; Power Dissipation Pd:88W; Power Dissipation Pd:88W; Pulse Current Idm:60A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-220AB;PD 130W;-55deg
***ure Electronics
Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3
***fin
Transistor NPN Mos IRF540/IRF540N INTERNATIONAL RECTIFIER Ampere=28 V=100 TO220
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***id Electronics
Transistor MOSFET N-Ch. 33A/100V TO220 IRF 540 N PBF
***ow.cn
Trans MOSFET N-CH Si 100V 33A 3-Pin(3+Tab) TO-220AB Full-Pak Tube
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):44mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 130 W
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
*** Electronics
100V 33A RDSON 44mOHM TO- 220AB IR IRF540N Interna tional Rectifier Descrip tion: MOSFET; N-Channel; 100 V (Min.); 33 A (Max.) ; 130 W (Max.); 11 ns (Ty p.)
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***eco
Transistor MOSFET N Channel 100 Volt 57 Amp 3-Pin 3+ Tab TO-220AB
***ure Electronics
Single N-Channel 100 V 23 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;TO-220AB;PD 2.5W
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***id Electronics
Transistor MOSFET N-Ch. 59A/100V TO220 IRF 3710 PBF
***ter Electronics
MOSFET, 100V, 57A, 23 MOHM, 86.7 NC QG, TO-220AB
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W
***roFlash
Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, 100V, 57A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:46A; Drain Source Voltage Vds:100V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:57A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
IRFI520NPBF
DISTI # 70018303		Infineon Technologies AGMOSFET,100V,7.2A,200 MOHM,16.7 NC QG,TO-220 FULLPACK
RoHS: Compliant		0
  • 950:$0.7600
IRFI520NPBFInternational Rectifier7.6 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB3
  • 2:$6.2000
  • 1:$7.4400
IRFI520NPBF
DISTI # 1013500		Infineon Technologies AGMOSFET, N, TO-220FP
RoHS: Compliant		0
  • 1:$1.2900
Bild Teil # Beschreibung
IRFI530NPBF

Mfr.#: IRFI530NPBF

OMO.#: OMO-IRFI530NPBF

 MOSFET MOSFT 100V 11A 110mOhm 29.3nC
IRFI530GPBF

Mfr.#: IRFI530GPBF

OMO.#: OMO-IRFI530GPBF

 MOSFET N-CH 100V HEXFET MOSFET
IRFI510GPBF

Mfr.#: IRFI510GPBF

OMO.#: OMO-IRFI510GPBF-VISHAY

 MOSFET N-CH 100V 4.5A TO220FP
IRFI520NPBF.

Mfr.#: IRFI520NPBF.

OMO.#: OMO-IRFI520NPBF--1190

 Neu und Original
IRFI520NPBF

Mfr.#: IRFI520NPBF

OMO.#: OMO-IRFI520NPBF-1190

 MOSFET, 100V, 7.2A, 200 MOHM, 16.7 NC QG, TO-220 FULLPACK
IRFI510G/ SIHFI510G

Mfr.#: IRFI510G/ SIHFI510G

OMO.#: OMO-IRFI510G-SIHFI510G-1190

 Neu und Original
IRFI530N

Mfr.#: IRFI530N

OMO.#: OMO-IRFI530N-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V 12A TO220FP
IRFI540A

Mfr.#: IRFI540A

OMO.#: OMO-IRFI540A-1190

 Neu und Original
IRFI540NPBF

Mfr.#: IRFI540NPBF

OMO.#: OMO-IRFI540NPBF-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V 20A TO220FP
IRFI520GPBF

Mfr.#: IRFI520GPBF

OMO.#: OMO-IRFI520GPBF-VISHAY

 MOSFET N-CH 100V 7.2A TO220FP
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von IRFI520NPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,14 $
1,14 $
10
1,08 $
10,83 $
100
1,03 $
102,60 $
500
0,97 $
484,50 $
1000
0,91 $
912,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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