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MRF6VP21KHR5

MRF6VP21KHR5
Mfr. #:
MRF6VP21KHR5
Hersteller:
NXP Semiconductors
Beschreibung:
RF MOSFET Transistors VHV6 225MHZ 1000W NI1230
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MRF6VP21KHR5 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
MRF6VP21KHR5 Mehr Informationen MRF6VP21KHR5 Product Details
Produkteigenschaft
Attributwert
Hersteller
NXP / Freescale
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
MRF6VP21KH
Typ
HF-Leistungs-MOSFET
Verpackung
Spule
Gewichtseinheit
0.464036 oz
Montageart
SMD/SMT
Paket-Koffer
NI-1230
Technologie
Si
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 65 C
Vgs-Gate-Source-Spannung
- 6 V 10 V
Vds-Drain-Source-Breakdown-Voltage
110 V
Transistor-Polarität
N-Kanal
Tags
MRF6VP2, MRF6VP, MRF6V, MRF6, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Lateral N-Channel Broadband RF Power MOSFET, 10-235 MHz, 1000 W, 50 V
***ical
Trans RF MOSFET N-CH 110V 5-Pin NI-1230 T/R
*** Electronics
RF MOSFET, N CHANNEL, 110V, 375D-05 - More Details
***el Electronic
Power Management Specialized - PMIC DDR/VTT Termination Reg
***nsix Microsemi
N-Channel Metal-oxide Semiconductor FET
*** International
FET RF 2CH 110V 225MHZ NI-1230
***ark
RF MOSFET, N CHANNEL, 110V, 375D-05; Transistor Type:RF FET; Drain Source Voltage, Vds:110V; RF Transistor Case:375D; Gain:24dB; Gate-Source Voltage:10V; Operating Frequency Max:225MHz; Output Power, Pout:1kW; Package/Case:Case 375D
***escale Semiconductor
Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V
***W
RF Power Transistor,470 to 860 MHz, 450 W, Typ Gain in dB is 22.5 @ 860 MHz, 50 V, LDMOS, SOT1787
***ark
RF MOSFET, N CHANNEL, 110V, 375D-05; Transistor Type:RF FET; Drain Source Voltage, Vds:110V; RF Transistor Case:375D; Gain:20.5dB; Gate-Source Voltage:10V; Operating Frequency Max:860MHz; Output Power, Pout:90W
***nell
RF FET, 110V, 860MHZ-470MHZ, CASE 375D; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 860MHz; Operating Frequency Max: 470MHz; RF Transistor Case: NI-1230; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MRF6VP3450H Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***ark
Lateral N-Channel Broadband Rf Power Mosfet, 1.8-150 Mhz, 1000 W, 50 V Rohs Compliant: Yes
***W
RF Power Transistor,1.8 to 150 MHz, 1000 W, Typ Gain in dB is 26 @ 130 MHz, 50 V, LDMOS, SOT1787
***nell
RF FET, N-CH, 110V, 1.8-150MHZ, NI-1230; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 150MHz; RF Transistor Case: NI-1230; No. of Pins: 4Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***W
RF Power Transistor,960 to 1215 MHz, 275 W, Typ Gain in dB is 20.3 @ 1030 MHz, 50 V, LDMOS, SOT1792
*** Semiconductors SCT
Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V, CFM2F, RoHS
***nell
TRANSISTOR, RF, 100V, NI-780H-2L; Drain Source Voltage Vds: 100VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 960MHz; Operating Frequency Max: 1215MHz; RF Transistor Case: NI-780; No. of
***(Formerly Allied Electronics)
N-channel MOSFET Transistor 190 A 100 V 4-Pin SOT-227
***ical
Trans MOSFET N-CH 100V 190A 4-Pin SOT-227
*** Source Electronics
Power MOSFET, 190 A | MOSFET N-CH 100V 190A SOT227
***ukat
N-Ch 100V 190A 568W 0,0065R SOT227
***ronik
N-CH 100V 190A 6,5mOhm SOT-227
***ure Electronics
Output & SW Modules - ECONO IGBT-e3
***nell
MOSFET, N-CH, 100V, 190A, SOT-227; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:568W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-227; No. of Pins:4; MSL:-; Operating Temperature Range:-55°C to +150°C
***ure Electronics
N-Channel 125 V 389 W HF/VHF/UHF MOS Field-Effect RF Power Transistor-M174
***roFlash
Rf Fet Transistor, 125 V, 20 A, 389 W, 230 Mhz, M174 Rohs Compliant: Yes
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***el Electronic
TDK - CGA2B3X7S2A102K050BB - Keramikvielschichtkondensator, SMD, 1000 pF, 100 V, 0402 [Metrisch 1005], ± 10%, X7S, Baureihe CGA
***nell
MOSFET, RF, 150W, 125V, 20A, M174; Drain Source Voltage Vds: 125V; Continuous Drain Current Id: 20A; Power Dissipation Pd: 389W; Operating Frequency Min: -; Operating Frequency Max: 230MHz; RF Transistor Case: M174; No. of Pin
***r Electronics
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
STAC2942 Series 130 V 40 A 350 W 21 dB N-channel RF SMT Power Transistor
***el Electronic
TDK - CGA5L3X7R2E104K160AA - SMD flerskiktig keramisk kondensator, 0.1 µF, 250 V, 1206 [3216 Metrisk], ± 10%, X7R, CGA Serien
***nell
RF TRANSISTOR, 130V, 175MHZ, STAC244B; Drain Source Voltage Vds: 130V; Continuous Drain Current Id: 40A; Power Dissipation Pd: 625W; Operating Frequency Min: -; Operating Frequency Max: 175MHz; RF Transistor Case: STAC244B; No. of Pins: 4Pins; Operating Temperature Max: 200°C; Product Range: -; MSL: -; SVHC: No SVHC (07-Jul-2017)
Teil # Mfg. Beschreibung Aktie Preis
MRF6VP21KHR5
DISTI # MRF6VP21KHR5CT-ND		NXP SemiconductorsFET RF 2CH 110V 225MHZ NI-1230
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3In Stock
  • 1:$938.0200
MRF6VP21KHR5
DISTI # MRF6VP21KHR5TR-ND		NXP SemiconductorsFET RF 2CH 110V 225MHZ NI-1230
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		Limited Supply - Call
    MRF6VP21KHR5
    DISTI # MRF6VP21KHR5DKR-ND    		NXP SemiconductorsFET RF 2CH 110V 225MHZ NI-1230
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      MRF6VP21KHR5Freescale SemiconductorPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
      RoHS: Compliant      		48
      • 1000:$900.9600
      • 500:$948.3800
      • 100:$987.3500
      • 25:$1,029.6700
      • 1:$1,108.8700
      MRF6VP21KHR5
      DISTI # 841-MRF6VP21KHR5      		NXP SemiconductorsRF MOSFET Transistors VHV6 225MHZ 1000W NI1230
      RoHS: Compliant      		0
        Bild Teil # Beschreibung
        MRF6VP3091NBR1

        Mfr.#: MRF6VP3091NBR1

        OMO.#: OMO-MRF6VP3091NBR1

        		 RF MOSFET Transistors VHV6 50V 4.5W TO272WB4
        MRF6VP41KHSR7

        Mfr.#: MRF6VP41KHSR7

        OMO.#: OMO-MRF6VP41KHSR7

        		 RF MOSFET Transistors VHV6 450MHZ1000W NI1230S
        MRF6VP3450HSR6

        Mfr.#: MRF6VP3450HSR6

        OMO.#: OMO-MRF6VP3450HSR6

        		 RF MOSFET Transistors VHV6 450W 860MHZ NI1230S
        MRF6VP41KHR7

        Mfr.#: MRF6VP41KHR7

        OMO.#: OMO-MRF6VP41KHR7

        		 RF MOSFET Transistors VHV6 450MHZ 1000W NI1230
        MRF6VP2600H

        Mfr.#: MRF6VP2600H

        OMO.#: OMO-MRF6VP2600H-1190

        		 Neu und Original
        MRF6VP3450HR6/FRESSCALE

        Mfr.#: MRF6VP3450HR6/FRESSCALE

        OMO.#: OMO-MRF6VP3450HR6-FRESSCALE-1190

        		 Neu und Original
        MRF6VP41KHR6

        Mfr.#: MRF6VP41KHR6

        OMO.#: OMO-MRF6VP41KHR6-NXP-SEMICONDUCTORS

        		 FET RF 2CH 110V 450MHZ NI1230
        MRF6VP41KHR5

        Mfr.#: MRF6VP41KHR5

        OMO.#: OMO-MRF6VP41KHR5-NXP-SEMICONDUCTORS

        		 FET RF 2CH 110V 450MHZ NI1230
        MRF6VP3091NBR1

        Mfr.#: MRF6VP3091NBR1

        OMO.#: OMO-MRF6VP3091NBR1-NXP-SEMICONDUCTORS

        		 RF MOSFET Transistors VHV6 50V 4.5W TO272WB4
        MRF6VP3091NR5

        Mfr.#: MRF6VP3091NR5

        OMO.#: OMO-MRF6VP3091NR5-NXP-SEMICONDUCTORS

        		 RF MOSFET Transistors VHV6 50V 4.5W
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1500
        Menge eingeben:
        Der aktuelle Preis von MRF6VP21KHR5 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        1,00 $
        1,00 $
        10
        1,00 $
        10,00 $
        100
        1,00 $
        100,00 $
        500
        1,00 $
        500,00 $
        1000
        1,00 $
        1 000,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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