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AOWF15S60

AOWF15S60
Mfr. #:
AOWF15S60
Hersteller:
Alpha & Omega Semiconductor Inc
Beschreibung:
MOSFET N-CH 600V 15A TO262F
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AOWF15S60 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
AOWF15S60 DatasheetAOWF15S60 Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Tags
AOWF1, AOWF, AOW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop
Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-262F
***ha & Omega Semiconductor SCT
600V N-Channel MOSFET, TO-262F-3, RoHS
***i-Key
MOSFET N-CH 600V 15A TO262F
***icroelectronics
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in I2PAK package
***ure Electronics
N-Channel 600 V 360 mOhm MDmesh™ II Power Mosfet - I2PAK
***r Electronics
Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ment14 APAC
MOSFET, N CH, 600V, 11A, I2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:90W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
***icroelectronics
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in I2PAKFP package
***et
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) I2PAK FP Tube
***enic
600V 11A 25W 360m´Î@10V5.5A 4V@250Ã×A N Channel I2PAKFP(TO-281) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
*** Electronic Components
MOSFET N-Ch 600V 0.28 Ohm 11A MDmesh II
***el Electronic
TRIMMER 500 OHM 0.25W PC PIN TOP
***et
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) I2PAK Rail
***ser
MOSFETs 600V, NCH, MOSFET
***inecomponents.com
600V N-Channel SuperFET
***eco
TEW CREATED FOR SUZHOU
***el Nordic
Contact for details
*** Electronics
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) I2PAK Rail
***ser
MOSFETs 600V N-Channel Adv Q-FET C-Series
***et
N-CH/600V/12A/QFET C-SERIES
***icroelectronics
N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package
***r Electronics
Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) I2PAK Tube
***icroelectronics SCT
Power MOSFETs, 650V, 12A, I2PAK, Tube
***ure Electronics
Single N-Channel 600 V 280 mOhm 43 nC CoolMOS™ Power Mosfet - TO-262-3
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO262-3-3, RoHS
***ment14 APAC
MOSFET,N CH,600V,13.8A,TO262; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-262; No. of Pins:3; Current Id Max:13.8A; Power Dissipation Pd:104W; Voltage Vgs Max:30V
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Teil # Mfg. Beschreibung Aktie Preis
AOWF15S60
DISTI # V36:1790_07841662		Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-262F
RoHS: Compliant		0
  • 1000000:$0.9090
  • 500000:$0.9103
  • 100000:$0.9767
  • 10000:$1.0720
  • 1000:$1.0880
Bild Teil # Beschreibung
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Mfr.#: AOWF15S60

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OMO.#: OMO-AOWF412-ALPHA-AND-OMEGA-SEMICONDUCTOR

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OMO.#: OMO-AOWFZ606-1190

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Mfr.#: AOWF12T60

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 MOSFET N-CH 600V 12A TO262F
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von AOWF15S60 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,21 $
2,21 $
10
2,10 $
20,98 $
100
1,99 $
198,80 $
500
1,88 $
938,80 $
1000
1,77 $
1 767,10 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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