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BSZ013NE2LS5IATMA1

BSZ013NE2LS5IATMA1
Mfr. #:
BSZ013NE2LS5IATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET LV POWER MOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSZ013NE2LS5IATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TSDSON-8
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
25 V
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
3.3 mm
Serie:
OptiMOS 5
Breite:
3.3 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Teil # Aliase:
BSZ013NE2LS5I SP001288148
Tags
BSZ01, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 25 V 1.3 mOhm 37 nC OptiMOS™ Power Mosfet - TSDSON-8 FL
***ineon SCT
With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation, PG-TSDSON-8, RoHS
***ineon
With the new OptiMOS 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. | Summary of Features: Best-in-class on-state resistance; Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd); RoHS compliant and halogen free; Optimized EMI behavior (integrated damping network) | Benefits: Highest efficiency; Highest power density with S3O8 or Power Block package; Reduction of overall system costs; Operation at high-switching frequency | Target Applications: Desktop and server; Single-phase and multiphase POL; CPU/GPU VR in notebooks; High power density voltage regulator; Or-ing; E-fuse
Teil # Mfg. Beschreibung Aktie Preis
BSZ013NE2LS5IATMA1
DISTI # 33590323		Infineon Technologies AGTrans MOSFET N-CH 25V 40A T/R5000
  • 5000:$1.1000
BSZ013NE2LS5IATMA1
DISTI # 33138285		Infineon Technologies AGTrans MOSFET N-CH 25V 40A T/R5000
  • 5000:$0.6408
BSZ013NE2LS5IATMA1
DISTI # BSZ013NE2LS5IATMA1-ND		Infineon Technologies AGMOSFET N-CH 25V 32A 8SON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.7307
BSZ013NE2LS5IATMA1
DISTI # V36:1790_13994209		Infineon Technologies AGTrans MOSFET N-CH 25V 40A T/R0
  • 5000000:$0.6447
  • 2500000:$0.6450
  • 500000:$0.6726
  • 50000:$0.7223
  • 5000:$0.7307
BSZ013NE2LS5IATMA1
DISTI # SP001288148		Infineon Technologies AGTrans MOSFET N-CH 25V 32A 8SON (Alt: SP001288148)
RoHS: Compliant
Min Qty: 5000		Europe - 5000
  • 50000:€0.6089
  • 30000:€0.6559
  • 20000:€0.7109
  • 10000:€0.7749
  • 5000:€0.9479
BSZ013NE2LS5IATMA1
DISTI # BSZ013NE2LS5IATMA1		Infineon Technologies AGTrans MOSFET N-CH 25V 32A 8SON - Tape and Reel (Alt: BSZ013NE2LS5IATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.6799
  • 30000:$0.6919
  • 20000:$0.7159
  • 10000:$0.7429
  • 5000:$0.7709
BSZ013NE2LS5IATMA1
DISTI # BSZ013NE2LS5I		Infineon Technologies AGTrans MOSFET N-CH 25V 32A 8SON (Alt: BSZ013NE2LS5I)
RoHS: Compliant
Min Qty: 5000		Asia - 0
    BSZ013NE2LS5IATMA1Infineon Technologies AGSingle N-Channel 25 V 1.3 mOhm 37 nC OptiMOS Power Mosfet - TSDSON-8 FL
    RoHS: Compliant    		5000Reel
    • 5000:$0.6700
    BSZ013NE2LS5IATMA1
    DISTI # 726-BSZ013NE2LS5IATM    		Infineon Technologies AGMOSFET LV POWER MOS
    RoHS: Compliant    		5940
    • 1:$1.5700
    • 10:$1.3300
    • 100:$1.0700
    • 500:$0.9370
    • 1000:$0.7770
    • 2500:$0.7230
    • 5000:$0.6960
    • 10000:$0.6700
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1988
    Menge eingeben:
    Der aktuelle Preis von BSZ013NE2LS5IATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,57 $
    1,57 $
    10
    1,33 $
    13,30 $
    100
    1,07 $
    107,00 $
    500
    0,94 $
    468,50 $
    1000
    0,78 $
    777,00 $
    2500
    0,72 $
    1 807,50 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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