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FGA40S65SH

FGA40S65SH
Mfr. #:
FGA40S65SH
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
IGBT Transistors 650V 40A Field Stop Trench IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGA40S65SH Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FGA40S65SH Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-3PN-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.4 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
80 A
Pd - Verlustleistung:
268 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
FGA40S65SH
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
80 A
Marke:
ON Semiconductor / Fairchild
Gate-Emitter-Leckstrom:
+/- 400 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
450
Unterkategorie:
IGBTs
Gewichtseinheit:
0.225789 oz
Tags
FGA40, FGA4, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
650V FS Gen3 Trench IGBT - 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED
***ow.cn
Trans IGBT Chip N-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-3P Tube
***emi
IGBT, 650 V, 40 A Field Stop Trench
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors 650V 40A Field Stop Trench IGBT
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
Using Fairchild®’s proprietary trench design and advanced field stop IGBT technology, 650V field stop offers superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO.
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
***et
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-3PF Tube
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel
***icroelectronics SCT
Short-circuit rugged IGBT, TO-3PF, Tube
*** Stop Electro
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:230W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IHW40N65R5XKSA1
***ineon SCT
Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices, PG-TO247-3, RoHS
***ineon
Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies
***ure Electronics
IHW50N65R5 Series 650 V 80 A 282 W Reverse Conducting IGBT - PG-TO-247-3
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:282W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IHW50N65R5XKSA1
***ineon SCT
Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices, PG-TO247-3, RoHS
***ineon
Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies
*** Stop Electro
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.4V; Power Dissipation Pd:230W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IKW40N65WR5XKSA1
***ineon
The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for cost sensitive customers. WR5 is recommended for use in AC-DC PFC stage in Welding, UPS and Solar. | Summary of Features: Optimized for full rated hard switching turn off typically found in Welding; Very low V ce(sat) of 1.35V @25C; Low E tot; Soft recovery and low Q rr for diode; Good R goff controllability | Benefits: Best price/performance ratio; Good fit to mainstream design of fsw>20kHz; Low T j & T c for lower heatsink and cooling cost | Target Applications: Welding; UPS; Solar
***roFlash
Igbt Single Transistor, 80 A, 1.7 V, 366 W, 650 V, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 650V 80A 36000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
NGTB40N65: 650 V 80 A 366 W Through Hole Field Stop II IGBT - TO-247-3
***nell
650V/40A FAST IGBT FSII T; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 366W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ical
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
***nell
IGBT, SINGLE, 650V, 80A, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 283W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins:
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
FGAFx0N60 Field Stop IGBTs
ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
FGA40S65SH Field Stop Trench IGBT
ON Semiconductor FGA40S65SH Field Stop Trench IGBT uses a proprietary trench design and advanced field stop IGBT technology. The FGA40S65SH IGBT features superior conduction, switching performance, and easy parallel operation. This IGBT is well suited for the resonant or soft switching applications like induction heating and Micro-Wave Office™ (MWO).
Teil # Mfg. Beschreibung Aktie Preis
FGA40S65SH
DISTI # V99:2348_16116321		ON Semiconductor650V FS GEN3 TRENCH IGBT450
  • 1:$1.4899
FGA40S65SH
DISTI # FGA40S65SH-ND		ON Semiconductor650V FS GEN3 TRENCH IGBT
RoHS: Compliant
Min Qty: 450
Container: Tube		Temporarily Out of Stock
  • 450:$2.5561
FGA40S65SH
DISTI # 26743385		ON Semiconductor650V FS GEN3 TRENCH IGBT1350
  • 450:$2.4057
FGA40S65SH
DISTI # 25895796		ON Semiconductor650V FS GEN3 TRENCH IGBT450
  • 4:$1.4899
FGA40S65SH
DISTI # FGA40S65SH		ON Semiconductor650V FS Gen3 Trench IGBT - Bulk (Alt: FGA40S65SH)
Min Qty: 172
Container: Bulk		Americas - 0
  • 344:$1.7900
  • 516:$1.7900
  • 860:$1.7900
  • 1720:$1.7900
  • 172:$1.8900
FGA40S65SH
DISTI # FGA40S65SH		ON Semiconductor650V FS Gen3 Trench IGBT - Rail/Tube (Alt: FGA40S65SH)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 1800:$1.5900
  • 2700:$1.5900
  • 4500:$1.5900
  • 450:$1.6900
  • 900:$1.6900
FGA40S65SH
DISTI # 512-FGA40S65SH		ON SemiconductorIGBT Transistors 650V 40A Field Stop Trench IGBT
RoHS: Compliant		287
  • 1:$3.4800
  • 10:$2.9600
  • 100:$2.5600
  • 250:$2.4300
  • 500:$2.1800
  • 1000:$1.8400
  • 2500:$1.7500
FGA40S65SHFairchild Semiconductor Corporation 
RoHS: Not Compliant		876
  • 1000:$1.9200
  • 500:$2.0200
  • 100:$2.1100
  • 25:$2.2000
  • 1:$2.3600
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MKS0C032200C00KSSD

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 Cap Film 0.22uF 63V PET 10% (4.6 X 3 X 7.5mm) Radial 2.5mm 100C Bulk
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Verfügbarkeit
Aktie:
282
Auf Bestellung:
2265
Menge eingeben:
Der aktuelle Preis von FGA40S65SH dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,48 $
3,48 $
10
2,96 $
29,60 $
100
2,56 $
256,00 $
250
2,43 $
607,50 $
500
2,18 $
1 090,00 $
1000
1,84 $
1 840,00 $
2500
1,75 $
4 375,00 $
5000
1,68 $
8 400,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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