MRF8HP21130HSR3

Mfr. #:: MRF8HP21130HSR3
Hersteller:: NXP / Freescale
Beschreibung:: RF MOSFET Transistors HV8 2.1GHZ 130W NI780S-4
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: MRF8HP21130HSR3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: NXP

Produktkategorie:: HF-MOSFET-Transistoren

RoHS:: Y

Polarität des Transistors:: N-Kanal

Technologie:: Si

Vds - Drain-Source-Durchbruchspannung:: 65 V

Gewinnen:: 14.2 dB

Ausgangsleistung:: 28 W

Maximale Betriebstemperatur:: + 150 C

Montageart:: SMD/SMT

Paket / Koffer:: NI-780S-4

Verpackung:: Spule

Aufbau:: Single

Arbeitsfrequenz:: 2.11 GHz to 2.17 GHz

Serie:: MRF8HP21130H

Marke:: NXP / Freescale

Produktart:: HF-MOSFET-Transistoren

Werkspackungsmenge:: 250

Unterkategorie:: MOSFETs

Vgs - Gate-Source-Spannung:: 10 V

Vgs th - Gate-Source-Schwellenspannung:: 2.7 V

Gewichtseinheit:: 0.231270 oz

Tags: MRF8HP21130HS, MRF8HP211, MRF8H, MRF8, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRF8HP21130HSR3 Beschreibung

***escale Semiconductor: W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V

***ical: Trans RF MOSFET N-CH 65V 5-Pin Case 465H-02 T/R

*** Electronic Components: RF MOSFET Transistors HV8 2.1GHZ 130W NI780S-4

***el Electronic: Gate Drivers INTEGRATED DRIVER MOSFET

***or: FET RF 2CH 65V 2.17GHZ NI780S-4

***ure Electronics: N-Channel 50 V 16 A 0.047 Ohm Surface Mount Power Mosfet - TO-252AA

***emi: N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ

***ment14 APAC: MOSFET, N-CH, 50V, 16A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Source Voltage Vds:50V; On Resistance

***roFlash: Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.

***ure Electronics: Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - SOT-223-3

***ical: Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R

***nsix Microsemi: Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***emi: N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ

***ure Electronics: N-Channel 50 V 0.1 Ohm Surface Mount Logic Level Power Mosfet - TO-252AA

***r Electronics: Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ment14 APAC: MOSFET, N, LOGIC, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:50V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:14A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:48W; Power Dissipation Pd:40W; Pulse Current Idm:20A; SMD Marking:RFD14N05; Termination Type:SMD; Voltage Vds Typ:50V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

***rchild Semiconductor: These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.

***(Formerly Allied Electronics): IRLR014PBF N-channel MOSFET Transistor, 7.7 A, 60 V, 3-Pin DPAK

***ure Electronics: Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - TO-252

***nell: MOSFET, N, 60V, 7.7A, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.7A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 25W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; Alternate Case Style: D-PAK; Current Id Max: 7.7A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 0°C/W; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 31A; SMD Marking: IRLR014; Voltage Vds: 60V; Voltage Vds Typ: 60V; Voltage Vgs Max: 10V; Voltage Vgs Rds on Measurement: 5V; Voltage Vgs th Max: 2V

***(Formerly Allied Electronics): IRLR014TRPBF N-channel MOSFET Transistor; 7.7 A; 60 V; 3-Pin TO-252

***ure Electronics: Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - DPAK (TO-252)

***ark: N CHANNEL MOSFET, 60V, 7.7A, D-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:7.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

***emi: N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ

***ure Electronics: N-Channel 50 V 0.1 Ohm Surface Mount Logic Level Power Mosfet - TO-252AA

***r Electronics: Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ment14 APAC: N CHANNEL MOSFET, 50V, 14mA; Transistor; N CHANNEL MOSFET, 50V, 14mA; Transistor Polarity:N Channel; Continuous Drain Current Id:14mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V

***rchild Semiconductor: These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
MRF8HP21130HSR3 DISTI # V36:1790_19197355	NXP Semiconductors	Trans RF MOSFET N-CH 65V 5-Pin Case 465H-02 T/R	4586	2500:$9.4600 1000:$9.5800 500:$9.6900 250:$9.8100
MRF8HP21130HSR3 DISTI # MRF8HP21130HSR3-ND	NXP Semiconductors	FET RF 2CH 65V 2.17GHZ NI780S-4 RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	Limited Supply - Call
MRF8HP21130HSR3 DISTI # 30308706	NXP Semiconductors	Trans RF MOSFET N-CH 65V 5-Pin Case 465H-02 T/R	4500	2500:$9.4600 1000:$9.5800 500:$9.6900 250:$9.8100
MRF8HP21130HSR3 DISTI # MRF8HP21130HSR3	Avnet, Inc.	HV8 2.1GHZ 130W NI780S-4 - Bulk (Alt: MRF8HP21130HSR3) Min Qty: 5 Container: Bulk	Americas - 0	50:$69.0900 25:$70.3900 15:$73.0900 10:$75.9900 5:$79.0900
MRF8HP21130HSR3	Freescale Semiconductor	RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant	1985	1000:$71.4900 500:$75.2500 100:$78.3400 25:$81.7000 1:$87.9800

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: MRF8HP21080HR3 OMO.#: OMO-MRF8HP21080HR3	RF MOSFET Transistors HV8 2.1GHZ 160W NI780H-4
	Mfr.#: MRF8HP21080HSR3 OMO.#: OMO-MRF8HP21080HSR3	RF MOSFET Transistors HV8 2.1GHZ 160W NI780S-4
	Mfr.#: MRF8HP21080HR5 OMO.#: OMO-MRF8HP21080HR5	RF MOSFET Transistors HV8 2.1GHZ 160W NI780H-4
	Mfr.#: MRF8HP21130HSR5 OMO.#: OMO-MRF8HP21130HSR5-NXP-SEMICONDUCTORS	FET RF 2CH 65V 2.17GHZ NI780S-4
	Mfr.#: MRF8HP21080HR5 OMO.#: OMO-MRF8HP21080HR5-NXP-SEMICONDUCTORS	FET RF 2CH 65V 2.17GHZ NI780-4
	Mfr.#: MRF8HP21130HS OMO.#: OMO-MRF8HP21130HS-1190	Neu und Original
	Mfr.#: MRF8HP21130HR3 OMO.#: OMO-MRF8HP21130HR3-NXP-SEMICONDUCTORS	FET RF 2CH 65V 2.17GHZ NI780-4
	Mfr.#: MRF8HP21130HSR3 OMO.#: OMO-MRF8HP21130HSR3-NXP-SEMICONDUCTORS	FET RF 2CH 65V 2.17GHZ NI780S-4
	Mfr.#: MRF8HP21080HR3 OMO.#: OMO-MRF8HP21080HR3-NXP-SEMICONDUCTORS	FET RF 2CH 65V 2.17GHZ NI780-4
	Mfr.#: MRF8HP21080HSR3 OMO.#: OMO-MRF8HP21080HSR3-NXP-SEMICONDUCTORS	FET RF 2CH 65V 2.17GHZ NI780S-4

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3500
Menge eingeben:

Der aktuelle Preis von MRF8HP21130HSR3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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MRF8HP21130HSR3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes