FDP8870

Mfr. #:: FDP8870
Hersteller:: ON Semiconductor / Fairchild
Beschreibung:: MOSFET 30V N-Channel PowerTrench
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: FDP8870 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: FDP8870 Datasheet
ECAD Model:
Mehr Informationen:: FDP8870 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: ON Semiconductor

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: Durchgangsloch

Paket / Koffer:: TO-220-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 156 A

Rds On - Drain-Source-Widerstand:: 4.1 mOhms

Vgs - Gate-Source-Spannung:: 20 V

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 160 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: PowerTrench

Verpackung:: Rohr

Höhe:: 16.3 mm

Länge:: 10.67 mm

Serie:: FDP8870

Transistortyp:: 1 N-Channel

Typ:: MOSFET

Breite:: 4.7 mm

Marke:: ON Semiconductor / Fairchild

Abfallzeit:: 46 ns

Produktart:: MOSFET

Anstiegszeit:: 105 ns

Werkspackungsmenge:: 800

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 70 ns

Typische Einschaltverzögerungszeit:: 11 ns

Teil # Aliase:: FDP8870_NL

Gewichtseinheit:: 0.063493 oz

Tags: FDP8870, FDP887, FDP88, FDP8, FDP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDP8870 Beschreibung

***ure Electronics: N-Channel 30 V 4.1 mOhm Flange Mount PowerTrench® Mosfet - TO-220

***emi: N-Channel PowerTrench® MOSFET 30V, 156A, 4.1mΩ

***ical: Trans MOSFET N-CH 30V 19A 3-Pin (3+Tab) TO-220AB Rail

*** Stop Electro: Power Field-Effect Transistor, 19A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***(Formerly Allied Electronics): MOSFET, N Ch., 30V, 150A, 3.8 MOHM, 32 NC QG, TO-220AB, Pb-Free

*** Source Electronics: MOSFET N-CH 30V 150A TO-220AB / Trans MOSFET N-CH 30V 150A 3-Pin(3+Tab) TO-220AB Tube

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 30 V 4.5 mOhm 47 nC HEXFET® Power Mosfet - TO-220-3

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 140 W

*** Stop Electro: Power Field-Effect Transistor, 75A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:150A; On Resistance, Rds(on):3.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

***ical: Trans MOSFET N-CH 30V 19A Automotive 3-Pin(3+Tab) TO-220AB Rail

*** Stop Electro: Power Field-Effect Transistor, 19A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 30 V 8.7 mOhm 36 nC HEXFET® Power Mosfet - TO-220-3

***p One Stop: Trans MOSFET N-CH Si 30V 150A 3-Pin(3+Tab) TO-220AB Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 140 W

***ment14 APAC: MOSFET, N CH, 30V, 78A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:150A; Package / Case:TO-220AB; Power Dissipation Pd:140W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 260A;TO-220AB;PD 330W;-55de

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 30 V 4 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level

***p One Stop: Trans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube

***ment14 APAC: MOSFET, N, 30V, 200A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:260A; Junction to Case Thermal Resistance A:0.75°C/W; On State resistance @ Vgs = 10V:3mohm; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:1040A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V

***ure Electronics: N-Channel 30 V 11.6 mOhm PowerTrench Mosfet - TO-220AB-3

***emi: N-Channel PowerTrench® MOSFET 30V, 54A, 11.6mΩ

***Yang: Trans MOSFET N-CH 30V 11A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube

***ter Electronics: 30V,54A,11.6 OHMS,NCH,TO220,POWER TRENCH MOSFET

*** Stop Electro: Power Field-Effect Transistor, 11A I(D), 30V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:54A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:55W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:54A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Pd:55W; Power Dissipation Pd:55W; Power Dissipation Ptot Max:55W; Pulse Current Idm:65A; Termination Type:Through Hole; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***emi: N-Channel PowerTrench® MOSFET 30V, 114A, 5.3mΩ

***Yang: Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

FDP8870 Mehr Informationen

Fairchild PowerTrench MOSFETs

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
FDP8870 DISTI # V99:2348_06359791	ON Semiconductor	FET 30V 4.1 MOHM TO220	794	10000:$0.6969 5000:$0.7201 2500:$0.7476 1000:$0.7798 500:$1.0053 100:$1.1086 10:$1.1790 1:$1.3233
FDP8870 DISTI # V79:2366_17796507	ON Semiconductor	FET 30V 4.1 MOHM TO220	44	10000:$0.6969 5000:$0.7201 2500:$0.7476 1000:$0.7798 500:$1.0053 100:$1.1086 10:$1.1790 1:$1.3233
FDP8870 DISTI # FDP8870-ND	ON Semiconductor	MOSFET N-CH 30V 156A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	49In Stock	10:$1.9680 1:$2.1800
FDP8870-F085 DISTI # FDP8870-F085-ND	ON Semiconductor	MOSFET N-CH 30V 156A TO-220 RoHS: Compliant Min Qty: 400 Container: Tube	Limited Supply - Call
FDP8870 DISTI # 26703757	ON Semiconductor	FET 30V 4.1 MOHM TO220	3100	8000:$0.6575 4800:$0.6748 3200:$0.6834 1600:$0.6921 800:$0.6969
FDP8870 DISTI # 26292706	ON Semiconductor	FET 30V 4.1 MOHM TO220	794	500:$1.0053 100:$1.1086 10:$1.1790 9:$1.3233
FDP8870 DISTI # 30250080	ON Semiconductor	FET 30V 4.1 MOHM TO220	44	13:$1.1790
FDP8870 DISTI # FDP8870	ON Semiconductor	Trans MOSFET N-CH 30V 19A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FDP8870) RoHS: Compliant Min Qty: 800 Container: Tube	Americas - 11	800:$0.7259 1600:$0.7209 3200:$0.7119 4800:$0.7029 8000:$0.6849
FDP8870 DISTI # FDP8870	ON Semiconductor	Trans MOSFET N-CH 30V 19A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP8870) RoHS: Compliant Min Qty: 1	Europe - 0	1:€1.2309 10:€1.0939 25:€0.9849 50:€0.8949 100:€0.8209 500:€0.7579 1000:€0.7029
FDP8870 DISTI # 60J0601	ON Semiconductor	Trans MOSFET N-CH 30V 19A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: 60J0601) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$1.1800 1600:$0.9910 3200:$0.9270 5600:$0.8950
FDP8870 DISTI # 60J0601	ON Semiconductor	N CHANNEL MOSFET, 30V, 156A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:156A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,MSL:- RoHS Compliant: Yes	6	1:$1.9400 10:$1.6600 100:$1.3400 500:$1.1800 1000:$0.9910 2500:$0.9270 5000:$0.8950
FDP8870 DISTI # 31Y1387	ON Semiconductor	MOSFET Transistor, N Channel, 156 A, 30 V, 0.0034 ohm, 10 V, 2.5 V RoHS Compliant: Yes	16	1:$1.8800 10:$1.6000 100:$1.2800 500:$1.1200 1000:$0.9270 2500:$0.8630 5000:$0.8310
FDP8870-F085 DISTI # 48AC1029	ON Semiconductor	NMOS TO220 30V 4.1 MOHM / TUBE	0
FDP8870. DISTI # 29AC6283	Fairchild Semiconductor Corporation	FET 30V 4.1 MOHM TO220 ROHS COMPLIANT: YES	11	1:$1.8800 10:$1.6000 100:$1.2800 500:$1.1200 1000:$0.9270 2500:$0.8630 5000:$0.8310
FDP8870 DISTI # 512-FDP8870	ON Semiconductor	MOSFET 30V N-Channel PowerTrench RoHS: Compliant	355	1:$1.8800 10:$1.6000 100:$1.2800 500:$1.1200 1000:$0.9270
FDP8870-F085 DISTI # 512-FDP8870_F085	ON Semiconductor	MOSFET 30V/156A/4.1Mohm/NCH POWERTRENCH RoHS: Compliant	457	1:$2.2700 10:$1.9300 100:$1.5400 500:$1.3500 1000:$1.1200 2500:$1.0400 5000:$1.0000
FDP8870	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 19A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	8438	1000:$0.8700 500:$0.9100 100:$0.9500 25:$0.9900 1:$1.0700
FDP8870	Fairchild Semiconductor Corporation	19 A, 30 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	675	413:$0.6750 186:$0.7290 1:$1.6200
FDP8870 DISTI # 6714869	ON Semiconductor	MOSFET N-CHANNEL 30V 19A TO220AB, PK	195	5:£1.4120 25:£1.0980 100:£0.8860 250:£0.7740 500:£0.7120
FDP8870 DISTI # 6714869P	ON Semiconductor	MOSFET N-CHANNEL 30V 19A TO220AB, TU	305	25:£1.0980 100:£0.8860 250:£0.7740 500:£0.7120
FDP8870	ON Semiconductor	Power Field-Effect Transistor, 19A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	Europe - 800
FDP8870	Fairchild Semiconductor Corporation	INSTOCK	3200
FDP8870 DISTI # C1S226600542124	ON Semiconductor	Trans MOSFET N-CH 30V 19A 3-Pin(3+Tab) TO-220AB Rail RoHS: Compliant	44	10:$1.1801
FDP8870 DISTI # C1S541901613578	ON Semiconductor	MOSFETs RoHS: Compliant	794	500:$1.0144 100:$1.1136 10:$1.1801
FDP8870 DISTI # C1S541901393878	ON Semiconductor	MOSFETs RoHS: Compliant	3100	1000:$0.7700 500:$0.8330 100:$0.9280 50:$1.1000 25:$1.2300 5:$1.7000
FDP8870 DISTI # 2453410	ON Semiconductor	MOSFET, N-CH, 30V, 156A, TO-220AB-3 RoHS: Compliant	16	1:$2.9800 10:$2.5400 100:$2.0300 500:$1.7800 1000:$1.4700 2500:$1.3700 5000:$1.3200 10000:$1.2600
FDP8870 DISTI # 2453410	ON Semiconductor	MOSFET, N-CH, 30V, 156A, TO-220AB-3 RoHS: Compliant	73	5:£1.3300 25:£1.2200 100:£0.9800 250:£0.9180 500:£0.8550

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Verfügbarkeit

Aktie:: 313
Auf Bestellung:: 2296
Menge eingeben:

Der aktuelle Preis von FDP8870 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,88 $~~; ~~1,88 $~~

10: ~~1,60 $~~; ~~16,00 $~~

100: ~~1,28 $~~; ~~128,00 $~~

500: ~~1,12 $~~; ~~560,00 $~~

1000: ~~0,93 $~~; ~~927,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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FDP8870

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes