IPL65R460CFDAUMA1

IPL65R460CFDAUMA1
Mfr. #:
IPL65R460CFDAUMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 700V 8.3A VSON-5
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPL65R460CFDAUMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
VSON-4
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
8.3 A
Rds On - Drain-Source-Widerstand:
460 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
31.5 nC
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
83.3 W
Aufbau:
Dual
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
8 mm
Serie:
CoolMOS CFDA
Transistortyp:
2 N-Channel
Breite:
8 mm
Marke:
Infineon-Technologien
Abfallzeit:
8 ns
Produktart:
MOSFET
Anstiegszeit:
7 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
38 ns
Typische Einschaltverzögerungszeit:
10 ns
Teil # Aliase:
IPL65R460CFD SP000949260
Tags
IPL65R4, IPL65R, IPL65, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 650(Min)V 8.3A 4-Pin VSON T/R
***ineon SCT
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, ThinPAK, RoHS
***
N-Channel 65 V 8.3A (Tc) 83.3W (Tc) Surface Mount Thin-Pak (8x8)
***or
MOSFET N-CH 650V 8.3A THIN-PAK
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
Teil # Mfg. Beschreibung Aktie Preis
IPL65R460CFDAUMA1
DISTI # IPL65R460CFDAUMA1-ND
Infineon Technologies AGMOSFET N-CH 4VSON
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    Bild Teil # Beschreibung
    IPL65R460CFDAUMA1

    Mfr.#: IPL65R460CFDAUMA1

    OMO.#: OMO-IPL65R460CFDAUMA1

    MOSFET N-Ch 700V 8.3A VSON-5
    IPL65R460CFD

    Mfr.#: IPL65R460CFD

    OMO.#: OMO-IPL65R460CFD-1190

    Neu und Original
    IPL65R460CFDAUMA1

    Mfr.#: IPL65R460CFDAUMA1

    OMO.#: OMO-IPL65R460CFDAUMA1-INFINEON-TECHNOLOGIES

    MOSFET N-Ch 700V 8.3A VSON-5
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1000
    Menge eingeben:
    Der aktuelle Preis von IPL65R460CFDAUMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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