BSR316PH6327XTSA1

Mfr. #:: BSR316PH6327XTSA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET SMALL SIGNAL+P-CH
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSR316PH6327XTSA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: BSR316PH6327XTSA1 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: PG-SC-59-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: P-Kanal

Vds - Drain-Source-Durchbruchspannung:: 100 V

Id - Kontinuierlicher Drainstrom:: 360 mA

Rds On - Drain-Source-Widerstand:: 1.8 Ohms

Vgs th - Gate-Source-Schwellenspannung:: 2 V

Vgs - Gate-Source-Spannung:: 10 V

Qg - Gate-Ladung:: 5.3 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 500 mW (1/2 W)

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Spule

Höhe:: 1.1 mm

Länge:: 3 mm

Produkt:: MOSFETs

Transistortyp:: 1 P-Channel

Typ:: Kleinsignaltransistor

Breite:: 1.6 mm

Marke:: Infineon-Technologien

Vorwärtstranskonduktanz - Min:: 300 mS

Abfallzeit:: 26 ns

Produktart:: MOSFET

Anstiegszeit:: 6 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 71 ns

Typische Einschaltverzögerungszeit:: 5 ns

Teil # Aliase:: BSR316P H6327 SP001101034

Gewichtseinheit:: 0.002469 oz

Tags: BSR316, BSR31, BSR3, BSR

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
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BSR316PH6327XTSA1 Beschreibung

***ure Electronics: Single P-Channel 100 V 360 mA 1.8 Ohm 7 nC SIPMOS® Power Mosfet - PG-SC-59

***ark: MOSFET, P-CH, 100V, 0.36A, 150DEG C/0.5W; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:360mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes

***ineon: Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger

***ure Electronics: Si1926DL Series Dual N Channel 60 V 1.4 Ohm Surface Mount Power Mosfet - SOT-363

***et: Transistor MOSFET Array Dual N-CH 60V 0.37A 6-Pin SC-70 T/R

***ark: Mosfet, Dual N Channel, 60V, 0.37A, Sot-363-6, Full Reel; Channel Type:dual N Channel; Drain Source Voltage Vds N Channel:60V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:370Ma; No. Of Pins:6Pins Rohs Compliant: No

***(Formerly Allied Electronics): SI1029X-T1-GE3 Dual N/P-channel MOSFET Transistor; 0.19 A; 0.3 A; 60V; 6-Pin SC-89

*** Source Electronics: Trans MOSFET N/P-CH 60V 0.305A/0.19A 6-Pin SC-89 T/R / MOSFET N/P-CH 60V SC89-6

***nsix Microsemi: Small Signal Field-Effect Transistor, 0.305A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***nell: MOSFET, NP CH, 60V, SC-89; Transistor Polarity:N and P Complement; Continuous Drain Current Id:305mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:250mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-89; No. of Pins:6

***(Formerly Allied Electronics): SI1026X-T1-GE3 Dual N-channel MOSFET Transistor; 0.3 A; 60 V; 6-Pin SC-89

***ure Electronics: Single N-Channel 60 V 3 O 250 mW Surface Mount Power Mosfet - SC-89-6

*** Source Electronics: MOSFET 2N-CH 60V 0.305A SC89-6 / Trans MOSFET N-CH 60V 0.305A 6-Pin SC-89 T/R

***ment14 APAC: N CHANNEL, MOSFET, 60V, 500mA, SC-89; Tr; N CHANNEL, MOSFET, 60V, 500mA, SC-89; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:1.4V; Threshold Voltage Vgs:20V

***emi: Small Signal MOSFET 20V 300mA 2.2 Ohm Single P-Channel SC-70

***ical: Trans MOSFET P-CH 20V 0.3A 3-Pin SC-70 T/R

***ser: MOSFETs- Power and Small Signal 20V 300mA P-Channel

***r Electronics: Small Signal Field-Effect Transistor, 0.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

*** Services: CoC and 2-years warranty / RFQ for pricing

***nell: MOSFET, P, 20V, SOT-323; Transistor Polarity: P Channel; Continuous Drain Current Id: 300mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 2.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -1.7V; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: 300mA; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: 1.7V; Voltage Vgs Rds on Measurement: -10V

***emi: Logic Level PowerTrench® MOSFET, P-Channel, -30 V, -1.6 A, 190 mΩ

***rchild Semiconductor: This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***ment14 APAC: P CHANNEL MOSFET, -30V, 1.6A, SC-70; Tra; Transistor Polarity:P Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):190mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.6V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.6A; Device Marking:.36; Package / Case:SC70; Power Dissipation Pd:750mW; Pulse Current Idm:6A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-1.6V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V

*** Source Electronics: Trans MOSFET P-CH 30V 0.7A 3-Pin SC-59 T/R / MOSFET P-CH 30V 700MA SC59-3

***ure Electronics: P-Channel 20 V 250 mOhm Enhancement Mode Field Effect Transistor -SC59

***ser: Transistor - FET P-Channel 30V 700mA

BSR316PH6327XTSA1 Mehr Informationen

Small Signal Power MOSFETs: Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.Learn More

BSR316P Small Signal Transistor: Infineon BSR316P Small Signal Transistor is a 20V to 250V P-channel power MOSFET. This transistor consistently meets the quality and performance requirements of power system design. The BSR316P is lead-free, AEC Q101 qualified, and features maximum 1.8Ω RDS(on). These transistors are avalanche-rated and halogen-free. They include enhancement mode and footprint compatibility to SOT23. Applications include automotive, consumer, DC-DC, motor control, notebook, onboard charger, and eMobility.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSR316PH6327XTSA1 DISTI # 33925021	Infineon Technologies AG	Trans MOSFET P-CH 100V 0.36A Automotive 3-Pin SC-59 T/R RoHS: Compliant	15000	3000:$0.0947
BSR316PH6327XTSA1 DISTI # BSR316PH6327XTSA1TR-ND	Infineon Technologies AG	MOSFET P-CH 100V 360MA SC-59-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	30000:$0.1361 15000:$0.1436 6000:$0.1542 3000:$0.1649
BSR316PH6327XTSA1 DISTI # BSR316PH6327XTSA1CT-ND	Infineon Technologies AG	MOSFET P-CH 100V 360MA SC-59-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.1862 500:$0.2410 100:$0.3068 10:$0.4110 1:$0.4800
BSR316PH6327XTSA1 DISTI # BSR316PH6327XTSA1DKR-ND	Infineon Technologies AG	MOSFET P-CH 100V 360MA SC-59-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.1862 500:$0.2410 100:$0.3068 10:$0.4110 1:$0.4800
BSR316PH6327XTSA1 DISTI # V72:2272_09156834	Infineon Technologies AG	Trans MOSFET P-CH 100V 0.36A Automotive 3-Pin SC-59 T/R RoHS: Compliant	0
BSR316PH6327XTSA1 DISTI # BSR316PH6327XTSA1	Infineon Technologies AG	Trans MOSFET P-CH 100V 0.36A 3-Pin SC-59 T/R - Tape and Reel (Alt: BSR316PH6327XTSA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 45000	30000:$0.1019 18000:$0.1039 12000:$0.1079 6000:$0.1119 3000:$0.1159
BSR316PH6327XTSA1 DISTI # SP001101034	Infineon Technologies AG	Trans MOSFET P-CH 100V 0.36A 3-Pin SC-59 T/R (Alt: SP001101034) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 12000	30000:€0.1039 18000:€0.1119 12000:€0.1249 6000:€0.1399 3000:€0.1649
BSR316PH6327XTSA1 DISTI # BSR316P H6327	Infineon Technologies AG	Trans MOSFET P-CH 100V 0.36A 3-Pin SC-59 T/R (Alt: BSR316P H6327) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
BSR316PH6327XTSA1 DISTI # 80Y2237	Infineon Technologies AG	MOSFET, P-CH, -100V, -0.36A, SC-59-3,Transistor Polarity:P Channel,Continuous Drain Current Id:-360mA,Drain Source Voltage Vds:-100V,On Resistance Rds(on):1.3ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V,Power RoHS Compliant: Yes	5056	1000:$0.1750 500:$0.1920 250:$0.2080 100:$0.2250 50:$0.2730 25:$0.3220 10:$0.3700 1:$0.4440
BSR316PH6327XTSA1 DISTI # 726-BSR316PH6327XTSA	Infineon Technologies AG	MOSFET SMALL SIGNAL+P-CH RoHS: Compliant	8137	1:$0.4400 10:$0.3660 100:$0.2230 1000:$0.1730 3000:$0.1470 9000:$0.1370 24000:$0.1300 45000:$0.1270
BSR316PH6327XTSA1 DISTI # BSR316PH6327XTSA1	Infineon Technologies AG	Transistor: P-MOSFET,unipolar,-100V,-0.29A,0.5W,SC59	2875	3000:$0.1261 500:$0.1351 100:$0.1509 25:$0.1869 3:$0.2185
BSR316PH6327XTSA1 DISTI # 2530221	Infineon Technologies AG	MOSFET, P-CH, -100V, -0.36A, SC-59-3 RoHS: Compliant	1040	3000:$0.2020 500:$0.2140 250:$0.2470 100:$0.2920 25:$0.3580 1:$0.4110
BSR316PH6327XTSA1 DISTI # 2530221	Infineon Technologies AG	MOSFET, P-CH, -100V, -0.36A, SC-59-3	16263	500:£0.1340 250:£0.1530 100:£0.1730 25:£0.3080 5:£0.3240

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Verfügbarkeit

Aktie:: 28
Auf Bestellung:: 2011
Menge eingeben:

Der aktuelle Preis von BSR316PH6327XTSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,44 $~~; ~~0,44 $~~

10: ~~0,37 $~~; ~~3,66 $~~

100: ~~0,22 $~~; ~~22,30 $~~

1000: ~~0,17 $~~; ~~173,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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BSR316PH6327XTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes