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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BC 856B E6327 DISTI # 726-BC856BE6327 | Infineon Technologies AG | Bipolar Transistors - BJT PNP 65 V 100 mA RoHS: Compliant | 0 | |
| BC856BE6327HTSA1 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon RoHS: Compliant | 12000 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BC856BE6327 OMO.#: OMO-BC856BE6327-1190 |
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon |
|
|
Mfr.#: BC856BE6327 , MAX6362HUT |
Neu und Original |
|
|
Mfr.#: BC856BE6327HTSA1 OMO.#: OMO-BC856BE6327HTSA1-1190 |
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon |
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|
Mfr.#: BC856BE6433 OMO.#: OMO-BC856BE6433-1190 |
Bipolar Junction Transistor, PNP Type, SOT-23 |