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IPZ60R017C7XKSA1

IPZ60R017C7XKSA1
Mfr. #:
IPZ60R017C7XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
HIGH POWER_NEW
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPZ60R017C7XKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPZ60R017C7XKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
IPZ60R01, IPZ60R0, IPZ60, IPZ6, IPZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 109A 4-Pin(4+Tab) TO-247 Tube
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:109A; On Resistance Rds(On):0.017Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Msl:- Rohs Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Teil # Mfg. Beschreibung Aktie Preis
IPZ60R017C7XKSA1
DISTI # 30710013		Infineon Technologies AGTrans MOSFET N-CH 600V 109A Tube8
  • 1:$13.1260
IPZ60R017C7XKSA1
DISTI # IPZ60R017C7XKSA1-ND		Infineon Technologies AGHIGH POWER_NEW
RoHS: Compliant
Min Qty: 240
Container: Tube		Temporarily Out of Stock
  • 240:$16.7259
IPZ60R017C7XKSA1
DISTI # V36:1790_16141113		Infineon Technologies AGTrans MOSFET N-CH 600V 109A Tube0
  • 120000:$12.2100
  • 24000:$13.4100
  • 2400:$16.0900
  • 240:$16.5700
IPZ60R017C7XKSA1
DISTI # IPZ60R017C7XKSA1		Infineon Technologies AGTrans MOSFET N-CH 650V 109A 4-Pin TO-247 Tube - Rail/Tube (Alt: IPZ60R017C7XKSA1)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 0
  • 1000:$13.2900
  • 500:$13.4900
  • 100:$13.9900
  • 50:$14.4900
  • 25:$14.6900
  • 10:$14.8900
  • 1:$15.0900
IPZ60R017C7XKSA1
DISTI # SP001369912		Infineon Technologies AGTrans MOSFET N-CH 650V 109A 4-Pin TO-247 Tube (Alt: SP001369912)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€12.1900
  • 500:€12.3900
  • 100:€12.5900
  • 50:€12.7900
  • 25:€13.4900
  • 10:€13.5900
  • 1:€13.9900
IPZ60R017C7XKSA1
DISTI # 84AC6848		Infineon Technologies AGMOSFET, N-CH, 600V, 109A, 446W, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:109A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes59
  • 250:$15.3400
  • 100:$16.0900
  • 50:$17.0400
  • 25:$17.9900
  • 10:$18.8400
  • 1:$20.4200
IPZ60R017C7XKSA1.
DISTI # 32AC0686		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:109A,Drain Source Voltage Vds:650V,On Resistance Rds(on):17mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power Dissipation Pd:446W,No. of Pins:4Pins RoHS Compliant: Yes0
  • 250:$15.3400
  • 100:$16.0900
  • 50:$17.0400
  • 25:$17.9900
  • 10:$18.8400
  • 1:$20.4200
IPZ60R017C7XKSA1
DISTI # 726-IPZ60R017C7XKSA1		Infineon Technologies AGMOSFET
RoHS: Compliant		240
  • 1:$20.2200
  • 5:$20.0100
  • 10:$18.6500
  • 25:$17.8100
  • 100:$15.9300
  • 250:$15.1900
IPZ60R017C7XKSA1
DISTI # 2983376		Infineon Technologies AGMOSFET, N-CH, 600V, 109A, 446W, TO-24759
  • 10:£14.5900
  • 5:£16.3800
  • 1:£16.5700
IPZ60R017C7XKSA1
DISTI # 2983376		Infineon Technologies AGMOSFET, N-CH, 600V, 109A, 446W, TO-247
RoHS: Compliant		27
  • 1:$20.9700
Bild Teil # Beschreibung
IPZ60R017C7XKSA1

Mfr.#: IPZ60R017C7XKSA1

OMO.#: OMO-IPZ60R017C7XKSA1

 MOSFET
IPZ60R017C7

Mfr.#: IPZ60R017C7

OMO.#: OMO-IPZ60R017C7-1190

 IPZ60R017C7
IPZ60R017C7 60C7017

Mfr.#: IPZ60R017C7 60C7017

OMO.#: OMO-IPZ60R017C7-60C7017-1190

 Neu und Original
IPZ60R017C7XKSA1

Mfr.#: IPZ60R017C7XKSA1

OMO.#: OMO-IPZ60R017C7XKSA1-INFINEON-TECHNOLOGIES

 HIGH POWER_NEW
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von IPZ60R017C7XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
18,22 $
18,22 $
10
17,31 $
173,14 $
100
16,40 $
1 640,25 $
500
15,49 $
7 745,65 $
1000
14,58 $
14 580,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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