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PSMN5R0-80BS,118

PSMN5R0-80BS,118
Mfr. #:
PSMN5R0-80BS,118
Hersteller:
Nexperia
Beschreibung:
RF Bipolar Transistors MOSFET Std N-chanMOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PSMN5R0-80BS,118 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
PSMN5R0-80BS,118 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
PSMN5R0-8, PSMN5R0, PSMN5, PSMN, PSM
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***peria
PSMN5R0-80BS - N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK
***et
Trans MOSFET N-CH 80V 100A 3-Pin(2+Tab) D2PAK T/R
***i-Key
MOSFET N CH 80V 100A D2PAK
***ark
Mosfet, N Channel, 80V, 100A, D2pak
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 80V, 100A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.00436ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:270W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C
***nell
MOSFET, CANALE N, 80V, 100A, D2PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:80V; Resistenza di Attivazione Rds(on):0.00436ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:270W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018); Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Temperatura di Esercizio Min:-55°C
PSMN N-Channel MOSFETs
Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.
Teil # Mfg. Beschreibung Aktie Preis
PSMN5R0-80BS,118
DISTI # 1727-7124-1-ND		NexperiaMOSFET N-CH 80V 100A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    PSMN5R0-80BS,118
    DISTI # 1727-7124-6-ND    		NexperiaMOSFET N-CH 80V 100A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      PSMN5R0-80BS,118
      DISTI # 1727-7124-2-ND      		NexperiaMOSFET N-CH 80V 100A D2PAK
      RoHS: Compliant
      Min Qty: 4800
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 4800:$1.0795
      PSMN5R0-80BS,118
      DISTI # PSMN5R0-80BS,118      		NexperiaTrans MOSFET N-CH 80V 100A 3-Pin(2+Tab) D2PAK T/R (Alt: PSMN5R0-80BS,118)
      RoHS: Compliant
      Min Qty: 800
      Container: Tape and Reel      		Europe - 4800
      • 800:€1.1179
      • 1600:€0.9319
      • 3200:€0.8599
      • 4800:€0.7979
      • 8000:€0.7449
      PSMN5R0-80BS,118
      DISTI # PSMN5R0-80BS,118      		NexperiaTrans MOSFET N-CH 80V 100A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN5R0-80BS,118)
      RoHS: Compliant
      Min Qty: 4800
      Container: Reel      		Americas - 0
      • 4800:$0.9929
      • 6400:$0.9799
      • 11200:$0.9549
      • 24000:$0.9309
      • 48000:$0.9089
      PSMN5R0-80BS,118
      DISTI # 771-PSMN5R0-80BS,118      		NexperiaMOSFET Std N-chanMOSFET
      RoHS: Compliant      		4800
      • 1:$2.2300
      • 10:$1.8900
      • 100:$1.5100
      • 500:$1.3300
      • 800:$1.1000
      • 2400:$1.0200
      • 4800:$0.9820
      PSMN5R0-80BS,118
      DISTI # 2114733      		NexperiaMOSFET, N-CH, 80V, 100A, D2PAK
      RoHS: Compliant      		3
      • 2500:$1.3500
      • 1000:$1.3700
      • 500:$1.4400
      • 250:$1.5400
      • 100:$1.8600
      • 25:$2.2300
      • 10:$3.0700
      • 1:$3.5600
      PSMN5R0-80BS,118
      DISTI # 2114733      		NexperiaMOSFET, N-CH, 80V, 100A, D2PAK
      RoHS: Compliant      		3
      • 500:£0.8320
      • 250:£0.9860
      • 100:£1.1400
      • 25:£1.4300
      • 5:£1.5400
      Bild Teil # Beschreibung
      PSMN5R0-100ES,127

      Mfr.#: PSMN5R0-100ES,127

      OMO.#: OMO-PSMN5R0-100ES-127

      		 MOSFET N-Ch 100V 5 mOhms
      PSMN5R0-100PS,127

      Mfr.#: PSMN5R0-100PS,127

      OMO.#: OMO-PSMN5R0-100PS-127

      		 MOSFET N-Ch 100V 5 mOhms
      PSMN5R0-100ES

      Mfr.#: PSMN5R0-100ES

      OMO.#: OMO-PSMN5R0-100ES-1190

      		 Now Nexperia PSMN5R0-100ES - Power Field-Effect Transistor, 120A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      PSMN5R0-100PS,127

      Mfr.#: PSMN5R0-100PS,127

      OMO.#: OMO-PSMN5R0-100PS-127-NEXPERIA

      		 MOSFET N-CH 100V 120A TO220AB
      PSMN5R0-30YL

      Mfr.#: PSMN5R0-30YL

      OMO.#: OMO-PSMN5R0-30YL-1190

      		 Neu und Original
      PSMN5R0-30YL,115

      Mfr.#: PSMN5R0-30YL,115

      OMO.#: OMO-PSMN5R0-30YL-115-NEXPERIA

      		 MOSFET N-CH 30V 91A LFPAK
      PSMN5R0-80PS,127

      Mfr.#: PSMN5R0-80PS,127

      OMO.#: OMO-PSMN5R0-80PS-127-NEXPERIA

      		 MOSFET N-CH 80V 100A TO220AB
      PSMN5R0-80PS127

      Mfr.#: PSMN5R0-80PS127

      OMO.#: OMO-PSMN5R0-80PS127-1190

      		 Now Nexperia PSMN5R0-80PS - Power Field-Effect Transistor, 100A I(D), 80V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      PSMN5R0-80BS,118

      Mfr.#: PSMN5R0-80BS,118

      OMO.#: OMO-PSMN5R0-80BS-118-NEXPERIA

      		 RF Bipolar Transistors MOSFET Std N-chanMOSFET
      PSMN5R0-100XS,127

      Mfr.#: PSMN5R0-100XS,127

      OMO.#: OMO-PSMN5R0-100XS-127-NXP-SEMICONDUCTORS

      		 RF Bipolar Transistors MOSFET N-ch 100V MOSFET
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4500
      Menge eingeben:
      Der aktuelle Preis von PSMN5R0-80BS,118 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,36 $
      1,36 $
      10
      1,30 $
      12,95 $
      100
      1,23 $
      122,70 $
      500
      1,16 $
      579,40 $
      1000
      1,09 $
      1 090,70 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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