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FGB7N60UNDF

FGB7N60UNDF
Mfr. #:
FGB7N60UNDF
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors 600V 7A NPT IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGB7N60UNDF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
FGB7N60UNDF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Fairchild Semiconductor
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Rohr
Gewichtseinheit
0.046296 oz
Montageart
SMD/SMT
Paket-Koffer
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Eingabetyp
Standard
Befestigungsart
Oberflächenmontage
Lieferanten-Geräte-Paket
TO-263AB (D2PAK)
Aufbau
Single
Leistung max
83W
Reverse-Recovery-Time-trr
32.3ns
Strom-Kollektor-Ic-Max
14A
Spannungs-Kollektor-Emitter-Breakdown-Max
600V
IGBT-Typ
NPT
Strom-Kollektor-gepulster-Icm
21A
Vce-on-Max-Vge-Ic
2.3V @ 15V, 7A
Schaltenergie
99μJ (on), 104μJ (off)
Gate-Gebühr
18nC
Td-ein-aus-25°C
5.9ns/32.3ns
Testbedingung
400V, 7A, 10 Ohm, 15V
Pd-Verlustleistung
83 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
600 V
Kollektor-Emitter-Sättigungsspannung
2.1 V
Kontinuierlicher Kollektorstrom-bei-25-C
14 A
Gate-Emitter-Leckstrom
+/- 10 uA
Maximale Gate-Emitter-Spannung
+/- 20 V
Tags
FGB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Field Stop & Short Circuit Rated IGBTs
ON Semiconductor's Field Stop & short Circuit Rated IGBTs offer a variety of 600 and 650V Insulated Gate Bipolar Transistors (IGBTs) that have a collector current rating between 5A to 60A. This offers optimum performance for welding and PFC or low power inverter driven applications where low conduction, low switching losses and short circuit ruggedness features are essential. Typical applications for these include solar inverters, UPS, SMPS, welder, PFC, home appliance inverter driven (fan motor driver, circulation pump, refrigerator, dish washer), and industrial inverter (sewing machine, CNC).
Teil # Mfg. Beschreibung Aktie Preis
FGB7N60UNDF
DISTI # 31271979		ON Semiconductor600V 7A NPT IGBT1600
  • 9600:$0.9243
  • 4800:$0.9464
  • 2400:$0.9831
  • 800:$1.0494
FGB7N60UNDF
DISTI # 31234704		ON Semiconductor600V 7A NPT IGBT800
  • 9600:$0.9187
  • 4800:$0.9464
  • 2400:$0.9831
  • 800:$1.0494
FGB7N60UNDF
DISTI # FGB7N60UNDF-ND		ON SemiconductorIGBT 600V 14A 83W D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tube		Temporarily Out of Stock
  • 800:$1.3506
FGB7N60UNDF
DISTI # FGB7N60UNDF		ON SemiconductorTrans IGBT Chip N-CH 600V 14A 3-Pin(2+Tab) D2PAK Rail (Alt: FGB7N60UNDF)
RoHS: Compliant
Min Qty: 800		Europe - 0
  • 8000:€0.9479
  • 4800:€1.0019
  • 3200:€1.0439
  • 1600:€1.1289
  • 800:€1.3579
FGB7N60UNDF
DISTI # FGB7N60UNDF		ON SemiconductorTrans IGBT Chip N-CH 600V 14A 3-Pin(2+Tab) D2PAK Rail - Bulk (Alt: FGB7N60UNDF)
Min Qty: 305
Container: Bulk		Americas - 0
  • 3050:$1.0119
  • 1525:$1.0369
  • 915:$1.0509
  • 610:$1.0639
  • 305:$1.0709
FGB7N60UNDF
DISTI # FGB7N60UNDF		ON SemiconductorTrans IGBT Chip N-CH 600V 14A 3-Pin(2+Tab) D2PAK Rail - Tape and Reel (Alt: FGB7N60UNDF)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 8000:$0.9069
  • 4800:$0.9299
  • 3200:$0.9419
  • 1600:$0.9539
  • 800:$0.9599
FGB7N60UNDF
DISTI # 95T0028		ON SemiconductorNPTPIGBT TO263 7A 600V / REEL0
  • 30000:$0.9190
  • 18000:$0.9560
  • 12000:$0.9930
  • 6000:$1.1100
  • 3000:$1.1700
  • 1:$1.2400
FGB7N60UNDF
DISTI # 512-FGB7N60UNDF		ON SemiconductorIGBT Transistors 600V 7A NPT IGBT
RoHS: Compliant		768
  • 1:$2.1600
  • 10:$1.8300
  • 100:$1.4700
  • 500:$1.2800
  • 800:$1.0600
  • 2400:$0.9930
  • 4800:$0.9560
FGB7N60UNDFFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
RoHS: Compliant		994
  • 1000:$1.0800
  • 500:$1.1400
  • 100:$1.1800
  • 25:$1.2300
  • 1:$1.3300
FGB7N60UNDF
DISTI # 8648824P		ON SemiconductorIGBT 600V 7A SHORT CIRCUIT RATED D2PAK-2, TU730
  • 50:£0.6900
Bild Teil # Beschreibung
FGB7N60UNDF

Mfr.#: FGB7N60UNDF

OMO.#: OMO-FGB7N60UNDF

 IGBT Transistors 600V 7A NPT IGBT
FGB7N60UNDF

Mfr.#: FGB7N60UNDF

OMO.#: OMO-FGB7N60UNDF-ON-SEMICONDUCTOR

 IGBT Transistors 600V 7A NPT IGBT
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von FGB7N60UNDF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,36 $
1,36 $
10
1,29 $
12,92 $
100
1,22 $
122,43 $
500
1,16 $
578,15 $
1000
1,09 $
1 088,30 $
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