PDTA115EE,115

PDTA115EE,115
Mfr. #:
PDTA115EE,115
Hersteller:
NXP Semiconductors
Beschreibung:
Bipolar Transistors - Pre-Biased PNP W/RES 50V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PDTA115EE,115 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
PDTA115EE,115 DatasheetPDTA115EE,115 Datasheet (P4-P6)PDTA115EE,115 Datasheet (P7-P9)PDTA115EE,115 Datasheet (P10-P12)PDTA115EE,115 Datasheet (P13-P15)
ECAD Model:
Mehr Informationen:
PDTA115EE,115 Mehr Informationen PDTA115EE,115 Product Details
Produkteigenschaft
Attributwert
Tags
PDTA115EE, PDTA115E, PDTA115, PDTA11, PDTA1, PDTA, PDT
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***peria
PDTA115E series - PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm
***p One Stop
Trans Digital BJT PNP 50V 20mA Automotive 3-Pin SC-75 T/R
***ark
Small Signal Digital (BRT) Transistor; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-20mA; Base Input Resistor R1:100kohm; Base-Emitter Resistor R2:100kohm; Resistor Ratio, R1/R2:1 ;RoHS Compliant: Yes
***ment14 APAC
TRANS PNP W/RES 50V SOT-416; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Power Dissipation Pd:150mW; DC Collector Current:-100mA; DC Current Gain hFE:80; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-416; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:-150mV; Current Ic Continuous a Max:-5mA; Hfe Min:80; Package / Case:SOT-416; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose
***et
Trans Digital BJT PNP 50V 100mA 3-Pin SOT-323FL T/R
***i-Key
TRANS PREBIAS PNP 50V 0.2W UMT3F
***nell
DIGITAL TRANSISTOR, -0.1A, SOT-323FL; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: -50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 100kohm; Base-Emitter Resistor R2: 100kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SOT-323FL; No. of Pins: 3 Pin; Product Range: DTA015E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ical
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SC-75 T/R
***peria
PDTA143Z series - PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
***ark
Small Signal Digital (BRT) Transistor; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1/R2:10 ;RoHS Compliant: Yes
***ment14 APAC
TRANS PNP W/RES 50V SOT-416; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Power Dissipation Pd:150mW; DC Collector Current:-100mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-416; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:-100mV; Current Ic Continuous a Max:-5mA; Hfe Min:100; Package / Case:SOT-416; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose
*** Electronics
BRT TRANSISTOR, PNP, -50V, -100MA, 100KOHM / OPEN, 3-SOT-416 - More Details
***et
Trans Digital BJT PNP 50V 100mA 3-Pin SC-75 T/R
***peria
PDTA115T series - PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open
***nell
TRANS PNP W/RES 50V SOT-416; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Transition Frequency ft: -; Power Dissipation Pd: 150mW; DC Collector Current: -100mA; DC Current Gain hFE: 100hFE; Transistor Ca
***ark
Small Signal Digital (BRT) Transistor; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:100kohm; RF Transistor Case:SOT-416; No. of Pins:3 ;RoHS Compliant: Yes
***ment14 APAC
TRANS PNP W/RES 50V SOT-416; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Power Dissipation Pd:150mW; DC Collector Current:-100mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-416; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:-150mV; Current Ic Continuous a Max:-5mA; Hfe Min:100; Package / Case:SOT-416; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose
***(Formerly Allied Electronics)
ON Semi MMBT3906WT1G PNP Bipolar Transistor; 0.2 A; 40 V; 3-Pin SC-70
***emi
General Purpose Bipolar Transistor PNP Bipolar Transistor
***roFlash
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
***ure Electronics
MMBT Series 40 V 200 mA SMT PNP Silicon General Purpose Transistor - SOT-323
***p One Stop
Trans GP BJT PNP 40V 0.2A Automotive 3-Pin SC-70 T/R
***th Star Micro
NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 which is designed for low power surface mount applications.
***ical
Trans GP BJT PNP 50V 0.15A Automotive 3-Pin SC-75 T/R
***peria
2PA1774 - PNP general-purpose transistor
*** Americas
PNP transistor in a SOT416 (SC-75) plastic package
***ark
Bipolar (BJT) Single Transistor, PNP, 50 V, 250 MHz, 200 mW, 100 mA, 80 RoHS Compliant: Yes
***S.I.T. Europe - USA - Asia
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
***ure Electronics
DTA143Z Series 50 V 100 mA Surface Mount PNP Digital Transistor - UMT3
***ical
Trans Digital BJT PNP 50V 100mA 3-Pin UMT T/R
***ment14 APAC
Transistor; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Current Ic:-100mA; Base Input
***nell
TRANSISTOR; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-323; No. of Pins: 3 Pin; Product Range: DTA143Z Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 80hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 80; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 200mW; Termination Type: Surface Mount Device; Transistor Case Style: SOT-323; Transistor Polarity: PNP; Transistor Type: General Purpose; Transition Frequency ft: 250MHz
Teil # Mfg. Beschreibung Aktie Preis
PDTA115EE,115
DISTI # C1S537100414616
NexperiaTrans Digital BJT PNP 50V 20mA Automotive 3-Pin SC-75 T/R800
  • 500:$0.0185
PDTA115EE,115
DISTI # 568-2106-2-ND
NXP SemiconductorsTRANS PREBIAS PNP 150MW SC75
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    PDTA115EE,115
    DISTI # 568-2106-1-ND
    NXP SemiconductorsTRANS PREBIAS PNP 150MW SC75
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      PDTA115EE,115
      DISTI # 568-2106-6-ND
      NXP SemiconductorsTRANS PREBIAS PNP 150MW SC75
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        PDTA115EE,115
        DISTI # 771-PDTA115EE115
        NexperiaBipolar Transistors - Pre-Biased PNP W/RES 50V
        RoHS: Compliant
        0
          PDTA115EE115NXP SemiconductorsNow Nexperia PDTA115EE - Small Signal Bipolar Transistor, 0.02A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
          RoHS: Not Compliant
          96437
          • 100:$0.0400
          • 500:$0.0400
          • 1000:$0.0400
          • 1:$0.0500
          • 25:$0.0500
          Bild Teil # Beschreibung
          PDTA113ES

          Mfr.#: PDTA113ES

          OMO.#: OMO-PDTA113ES-1190

          Neu und Original
          PDTA113ET215

          Mfr.#: PDTA113ET215

          OMO.#: OMO-PDTA113ET215-1190

          Now Nexperia PDTA113ET - Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
          PDTA113ZE115

          Mfr.#: PDTA113ZE115

          OMO.#: OMO-PDTA113ZE115-1190

          Now Nexperia PDTA113ZE - Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-75
          PDTA114

          Mfr.#: PDTA114

          OMO.#: OMO-PDTA114-1190

          Neu und Original
          PDTA114EEF

          Mfr.#: PDTA114EEF

          OMO.#: OMO-PDTA114EEF-1190

          Neu und Original
          PDTA114TE115

          Mfr.#: PDTA114TE115

          OMO.#: OMO-PDTA114TE115-1190

          Now Nexperia PDTA114TE - Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-75
          PDTA115EE115

          Mfr.#: PDTA115EE115

          OMO.#: OMO-PDTA115EE115-1190

          Now Nexperia PDTA115EE - Small Signal Bipolar Transistor, 0.02A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-75
          PDTA115EMB315

          Mfr.#: PDTA115EMB315

          OMO.#: OMO-PDTA115EMB315-1190

          Now Nexperia PDTA115EMB - Small Signal Bipolar Transistor, 0.02A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, XQFN3
          PDTA115EU115

          Mfr.#: PDTA115EU115

          OMO.#: OMO-PDTA115EU115-1190

          Now Nexperia PDTA115EU - Small Signal Bipolar Transistor, 0.02A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-70
          PDTA114TT,215

          Mfr.#: PDTA114TT,215

          OMO.#: OMO-PDTA114TT-215-NEXPERIA

          Bipolar Transistors - Pre-Biased TRANS RET TAPE-7
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          5500
          Menge eingeben:
          Der aktuelle Preis von PDTA115EE,115 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          0,03 $
          0,03 $
          10
          0,03 $
          0,26 $
          100
          0,02 $
          2,50 $
          500
          0,02 $
          11,80 $
          1000
          0,02 $
          22,20 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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