IS43TR16256AL-125KBL-TR

IS43TR16256AL-125KBL-TR
Mfr. #:
IS43TR16256AL-125KBL-TR
Hersteller:
ISSI
Beschreibung:
DRAM 4G, 1.35V, 1600Mhz DDR3L
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IS43TR16256AL-125KBL-TR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IS43TR16256AL-125KBL-TR Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ISSI
Produktkategorie:
DRAM
RoHS:
Y
Typ:
SDRAM - DDR3L
Datenbusbreite:
16 bit
Organisation:
256 M x 16
Paket / Koffer:
BGA-96
Speichergröße:
4 Gbit
Maximale Taktfrequenz:
800 MHz
Zugriffszeit:
-
Versorgungsspannung - Max.:
1.45 V
Versorgungsspannung - Min.:
1.283 V
Versorgungsstrom - Max.:
261 mA
Minimale Betriebstemperatur:
0 C
Maximale Betriebstemperatur:
+ 95 C
Serie:
IS43TR16256AL
Verpackung:
Spule
Marke:
ISSI
Montageart:
SMD/SMT
Feuchtigkeitsempfindlich:
ja
Betriebsversorgungsspannung:
1.35 V
Produktart:
DRAM
Werkspackungsmenge:
1500
Unterkategorie:
Speicher & Datenspeicherung
Tags
IS43TR16256AL-12, IS43TR16256AL, IS43TR16256A, IS43TR162, IS43TR1, IS43T, IS43, IS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    O***v
    O***v
    RU

    Good buttons, with fixation. The size and quantity corresponds to the description of the seller. Delivery to chelyabinsk was 53 days. The track was tracked only when crossing the border. Packing is good. I recommend the product to buy.

    2019-08-05
    D***v
    D***v
    RU

    I write to those who have brains. The tolerance in 1% here and does not smell. Tks wild is quite like resistors based on carbon film. The thickness of the conclusions is not the worst. Of the 20 resistors of one nominal value-ten did not fit into a tolerance of 1%, and the rest with such a spread that it is impossible to choose the same. Money to the wind.

    2019-04-03
    V***v
    V***v
    RU

    Capacitors came quickly, there are no damage on the package, there are no external defects in the capacitors.

    2019-09-16
    I***c
    I***c
    SRB

    Received yesterday,everything seems fine,not tested all of them but i hope they will work when needed! :)Fast shippment.Recommended seller!

    2019-05-15
***ark
4G, 1.35V, DDR3L, 256Mx16, 1600MT/s @ 11-11-11, 96 ball BGA (9mm x13mm) RoHS, T&R
***et Europe
DRAM Chip DDR3L SDRAM 4Gbit 256M X 16 1.35V 96-Pin TWBGA T/R
***I SCT
DDR SDRAM, 256Mx16, 1.35V, 8K, BGA-96,RoHS
***or
IC DRAM 4GBIT PARALLEL 96TWBGA
4GBit DDR3 SDRAM
ISSI 4GBit DDR3 SDRAM delivers high speed SDRAM in compact BGA-78 and BGA-96 packages. ISSI 4GBit DDR3 SDRAM features 256Mx16 organization and supply voltage at either 1.45V or 1.3V with a maximum clock frequency of 666MHz or 800MHz. This SDRAM has 8 internal banks for concurrent operation and 8nBit pre-fetch architecture. Applications include Telecom and Networking, Automotive, and Industrial embedded computing.
DDR3 SDRAM
ISSI DDR3 SDRAM delivers high-speed data transfer rates up to 2133Mbps in a small BGA-96 or BGA-78 package. ISSI DDR3 SDRAM is available in a 64Mx16, 128Mx8, 128Mx16, 256Mx8, or  256Mx16 organization. Features include bidirectional differential data strobe, data masking per byte on Write commands, programmable burst length of 4 or 8, and programmable CAS latency. The ISSI DDR3 SDRAMs are well-suited for telecom & networking, automotive, and industrial embedded computing.
Bild Teil # Beschreibung
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BAS21GWX

Mfr.#: BAS21GWX

OMO.#: OMO-BAS21GWX

Diodes - General Purpose, Power, Switching High-voltage switching diode - 3k Reel
RG2012N-101-W-T1

Mfr.#: RG2012N-101-W-T1

OMO.#: OMO-RG2012N-101-W-T1

Thin Film Resistors - SMD 1/8W 100 Ohms 0.05% 0805 10ppm
ECS-240-8-33-AGN-TR

Mfr.#: ECS-240-8-33-AGN-TR

OMO.#: OMO-ECS-240-8-33-AGN-TR

Crystals 24MHz 25ppm 8pF -40C +85C
ASPI-4030S-1R0N-T

Mfr.#: ASPI-4030S-1R0N-T

OMO.#: OMO-ASPI-4030S-1R0N-T

Fixed Inductors 1.0uH 30% Shielded -40C +125C
SML-D13UWT86C

Mfr.#: SML-D13UWT86C

OMO.#: OMO-SML-D13UWT86C

Standard LEDs - SMD Red 620nm 85mcd 2V; 20mA; 0603
SI5340A-D-GM

Mfr.#: SI5340A-D-GM

OMO.#: OMO-SI5340A-D-GM-SILICON-LABS

BASE/BLANK PROTOTYPING DEVICE: C
GRJ155R60J106ME11D

Mfr.#: GRJ155R60J106ME11D

OMO.#: OMO-GRJ155R60J106ME11D-MURATA-ELECTRONICS

CAP CER 10UF 6.3V X5R 0402
GRM155R61A475MEAAD

Mfr.#: GRM155R61A475MEAAD

OMO.#: OMO-GRM155R61A475MEAAD-MURATA-ELECTRONICS

Cap Ceramic 4.7uF 10V X5R 20% Pad SMD 0402 85C T/R
BAS21GWX

Mfr.#: BAS21GWX

OMO.#: OMO-BAS21GWX-NEXPERIA

DIODE GEN PURP 200V 225MA SOD123
Verfügbarkeit
Aktie:
833
Auf Bestellung:
2816
Menge eingeben:
Der aktuelle Preis von IS43TR16256AL-125KBL-TR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
8,90 $
8,90 $
10
8,19 $
81,90 $
25
8,00 $
200,00 $
100
7,17 $
717,00 $
250
6,96 $
1 740,00 $
500
6,61 $
3 305,00 $
1000
6,38 $
6 380,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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