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Teil # | Mfg. | Beschreibung | Aktie | Preis |
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SI4459BDY-T1-GE3 DISTI # V72:2272_21688054 | Vishay Intertechnologies | SI4459BDY-T1-GE3 | 4861 |
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SI4459BDY-T1-GE3 DISTI # SI4459BDY-T1-GE3CT-ND | Vishay Siliconix | MOSFET P-CHAN 30V SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 2344In Stock |
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SI4459BDY-T1-GE3 DISTI # SI4459BDY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET P-CHAN 30V SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 2344In Stock |
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SI4459BDY-T1-GE3 DISTI # SI4459BDY-T1-GE3TR-ND | Vishay Siliconix | MOSFET P-CHAN 30V SO-8 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Temporarily Out of Stock |
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SI4459BDY-T1-GE3 DISTI # 29568925 | Vishay Intertechnologies | SI4459BDY-T1-GE3 | 4861 |
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SI4459BDY-T1-GE3 DISTI # SI4459BDY-T1-GE3 | Vishay Intertechnologies | - Tape and Reel (Alt: SI4459BDY-T1-GE3) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
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SI4459BDY-T1-GE3 DISTI # 56AC6588 | Vishay Intertechnologies | MOSFET, P-CH, -30V, -27.8A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-27.8A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0041ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.2V,Power RoHS Compliant: Yes | 4362 |
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SI4459BDY-T1-GE3 DISTI # 59AC7481 | Vishay Intertechnologies | P-CHANNEL 30-V (D-S) MOSFET | 0 |
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Si4459BDY-T1-GE3 DISTI # 78-SI4459BDY-T1-GE3 | Vishay Intertechnologies | MOSFET -30V Vds 16V Vgs SO-8 RoHS: Compliant | 5077 |
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SI4459BDY-T1-GE3 DISTI # 2857064 | Vishay Intertechnologies | MOSFET, P-CH, -30V, -27.8A, SOIC RoHS: Compliant | 4362 |
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SI4459BDY-T1-GE3 DISTI # 2857064 | Vishay Intertechnologies | MOSFET, P-CH, -30V, -27.8A, SOIC | 4441 |
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Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: Si4459BDY-T1-GE3 OMO.#: OMO-SI4459BDY-T1-GE3 |
MOSFET -30V Vds 16V Vgs SO-8 | |
Mfr.#: SI4459BDY-T1-GE3 OMO.#: OMO-SI4459BDY-T1-GE3-VISHAY |
MOSFET P-CHAN 30V SO-8 |