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NSVBC850BLT1G

NSVBC850BLT1G
Mfr. #:
NSVBC850BLT1G
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - BJT SS SOT23 GP XSTR NPN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NSVBC850BLT1G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSVBC850BLT1G DatasheetNSVBC850BLT1G Datasheet (P4-P6)NSVBC850BLT1G Datasheet (P7-P9)NSVBC850BLT1G Datasheet (P10-P12)NSVBC850BLT1G Datasheet (P13)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-23-3
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
45 V
Kollektor- Basisspannung VCBO:
50 V
Emitter- Basisspannung VEBO:
6 V
Kollektor-Emitter-Sättigungsspannung:
0.6 V
Bandbreitenprodukt fT gewinnen:
100 MHz
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
BC846ALT1
DC-Stromverstärkung hFE Max:
450
Verpackung:
Spule
Marke:
ON Semiconductor
Kontinuierlicher Kollektorstrom:
100 mA
DC-Kollektor/Basisverstärkung hfe Min:
200
Pd - Verlustleistung:
225 mW
Produktart:
BJTs - Bipolartransistoren
Qualifikation:
AEC-Q101
Werkspackungsmenge:
3000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.000282 oz
Tags
NSVBC85, NSVBC8, NSVBC, NSVB, NSV
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
NPN Bipolar Transistor SS SOT23 GP XSTR NPN 45V
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
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45V 225mW 100mA 290@2mA5V 100MHz 600mV@100mA5mA NPN -55¡Í~+150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
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TRANS NPN 45V 0.1A SOT-23
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TRANS NPN 45V 100MA SOT23-3
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***ical
Trans GP BJT NPN 45V 0.1A 300mW Automotive 3-Pin SOT-23 T/R
***Yang
Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 45V
***nell
TRANSISTOR, AEC-Q101, NPN, 45V, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 225mW; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
Bipolar (BJT) Transistor NPN 45 V 100 mA 200MHz 350 mW Surface Mount SST3
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Trans GP BJT NPN 45V 0.1A 350mW 3-Pin SOT-23 T/R
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Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
***ark
Transistor Sot-23 Sst; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:45V; Transition Frequency Ft:200Mhz; Power Dissipation Pd:200Mw; Dc Collector Current:10Ma; Dc Current Gain Hfe:200Hfe; Transistor Case Style:sot-23; Rohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
NSVBC850BLT1G
DISTI # 26622927		ON SemiconductorTrans GP BJT NPN 45V 0.1A Automotive 3-Pin SOT-23 T/R408000
  • 12000:$0.0436
NSVBC850BLT1G
DISTI # 22910293		ON SemiconductorTrans GP BJT NPN 45V 0.1A Automotive 3-Pin SOT-23 T/R9000
  • 9000:$0.0436
NSVBC850BLT1G
DISTI # NSVBC850BLT1G-ND		ON SemiconductorTRANS NPN BIPOLAR 45V SOT23-3
RoHS: Compliant
Min Qty: 6000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 6000:$0.0531
NSVBC850BLT1G
DISTI # V36:1790_14070785		ON SemiconductorTrans GP BJT NPN 45V 0.1A Automotive 3-Pin SOT-23 T/R0
  • 6000000:$0.0307
  • 1200000:$0.0373
  • 120000:$0.0508
  • 12000:$0.0531
NSVBC850BLT1G
DISTI # NSVBC850BLT1G		ON SemiconductorTrans GP BJT NPN 45V 0.1A 3-Pin SOT-23 T/R - Tape and Reel (Alt: NSVBC850BLT1G)
RoHS: Compliant
Min Qty: 24000
Container: Reel		Americas - 0
  • 240000:$0.0312
  • 120000:$0.0320
  • 72000:$0.0324
  • 48000:$0.0329
  • 24000:$0.0331
NSVBC850BLT1G
DISTI # 68Y0581		ON SemiconductorSS SOT23 GP XSTR NPN 45V / REEL0
  • 30000:$0.0330
  • 18000:$0.0380
  • 12000:$0.0410
  • 6000:$0.0470
  • 3000:$0.0570
  • 1:$0.0650
NSVBC850BLT1G
DISTI # 863-NSVBC850BLT1G		ON SemiconductorBipolar Transistors - BJT SS SOT23 GP XSTR NPN
RoHS: Compliant		10147
  • 1:$0.3400
  • 10:$0.2280
  • 100:$0.0950
  • 1000:$0.0650
  • 3000:$0.0510
  • 9000:$0.0440
Bild Teil # Beschreibung
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L721A

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OMO.#: OMO-L721A

 DC Power Connectors Panel Mnt 2.1mm Long Bushing Solder
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Mfr.#: AC0805FR-071K96L

OMO.#: OMO-AC0805FR-071K96L

 Thick Film Resistors - SMD 1.96K ohm 1% 1/8W AEC-Q200
L721A

Mfr.#: L721A

OMO.#: OMO-L721A-SWITCHCRAFT-CONXALL

 LONGER BUSHING D-FLA
NC7SV86P5X

Mfr.#: NC7SV86P5X

OMO.#: OMO-NC7SV86P5X-ON-SEMICONDUCTOR

 IC GATE XOR 1CH 2-INP SC70-5
2311765-1

Mfr.#: 2311765-1

OMO.#: OMO-2311765-1-TE-CONNECTIVITY

 CONN RCPT HD20 R/A 9P S/L .318
30310-6002HB

Mfr.#: 30310-6002HB

OMO.#: OMO-30310-6002HB-3M

 Headers & Wire Housings 10P STRT 4WALL GLDFL
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1993
Menge eingeben:
Der aktuelle Preis von NSVBC850BLT1G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,34 $
0,34 $
10
0,23 $
2,28 $
100
0,10 $
9,50 $
1000
0,06 $
65,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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