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BSZ120P03NS3 G

BSZ120P03NS3 G
Mfr. #:
BSZ120P03NS3 G
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSZ120P03NS3 G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TSDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
40 A
Rds On - Drain-Source-Widerstand:
9 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.1 V
Vgs - Gate-Source-Spannung:
25 V
Qg - Gate-Ladung:
45 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
52 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
3.3 mm
Serie:
OptiMOS P3
Transistortyp:
1 P-Channel
Breite:
3.3 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
22 S
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
11 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
23 ns
Typische Einschaltverzögerungszeit:
13 ns
Teil # Aliase:
BSZ120P03NS3GATMA1 BSZ12P3NS3GXT SP000709736
Tags
BSZ120P03NS3G, BSZ120P03NS, BSZ120P, BSZ120, BSZ12, BSZ1, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
BSZ120P03NS3GATMA1
DISTI # C1S322000525632		Infineon Technologies AGMOSFETs
RoHS: Compliant		3441
  • 5000:$0.2079
BSZ120P03NS3GATMA1
DISTI # BSZ120P03NS3GATMA1CT-ND		Infineon Technologies AGMOSFET P-CH 30V 40A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4949In Stock
  • 1000:$0.3287
  • 500:$0.4108
  • 100:$0.5546
  • 10:$0.7190
  • 1:$0.8200
BSZ120P03NS3GATMA1
DISTI # BSZ120P03NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET P-CH 30V 40A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4949In Stock
  • 1000:$0.3287
  • 500:$0.4108
  • 100:$0.5546
  • 10:$0.7190
  • 1:$0.8200
BSZ120P03NS3GATMA1
DISTI # BSZ120P03NS3GATMA1TR-ND		Infineon Technologies AGMOSFET P-CH 30V 40A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.2692
BSZ120P03NS3 G
DISTI # BSZ120P03NS3 G		Infineon Technologies AGTrans MOSFET P-CH 30V 40A 8-Pin TSDSON T/R (Alt: BSZ120P03NS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
  • 5000:$0.2371
  • 10000:$0.2306
  • 15000:$0.2243
  • 25000:$0.2184
  • 50000:$0.2156
  • 125000:$0.2128
  • 250000:$0.2101
BSZ120P03NS3GATMA1
DISTI # BSZ120P03NS3GATMA1		Infineon Technologies AGTrans MOSFET P-CH 30V 40A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ120P03NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.2079
  • 10000:$0.2009
  • 20000:$0.1939
  • 30000:$0.1869
  • 50000:$0.1839
BSZ120P03NS3GATMA1
DISTI # SP000709736		Infineon Technologies AGTrans MOSFET P-CH 30V 40A 8-Pin TSDSON T/R (Alt: SP000709736)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€0.2849
  • 10000:€0.2329
  • 20000:€0.2139
  • 30000:€0.1969
  • 50000:€0.1829
BSZ120P03NS3GATMA1
DISTI # 97Y1270		Infineon Technologies AGMOSFET, P-CH, -30V, -40A, PG-TSDSON-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-40A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,Power RoHS Compliant: Yes2068
  • 1:$0.6800
  • 10:$0.5620
  • 25:$0.4960
  • 50:$0.4290
  • 100:$0.3630
  • 250:$0.3390
  • 500:$0.3150
  • 1000:$0.2910
BSZ120P03NS3GATMA1Infineon Technologies AGSingle P-Channel 30 V 12 mOhm 30 nC OptiMOS Power Mosfet - TSDSON-8
RoHS: Not Compliant		180Cut Tape/Mini-Reel
  • 1:$0.3250
  • 100:$0.2700
  • 250:$0.2600
  • 500:$0.2550
  • 1500:$0.2350
BSZ120P03NS3 G
DISTI # 726-BSZ120P03NS3G		Infineon Technologies AGMOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
RoHS: Compliant		224
  • 1:$0.7000
  • 10:$0.5800
  • 100:$0.3800
  • 1000:$0.3000
  • 5000:$0.2500
BSZ120P03NS3GATMA1
DISTI # 726-BSZ120P03NS3GATM		Infineon Technologies AGMOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
RoHS: Compliant		8863
  • 1:$0.6800
  • 10:$0.5620
  • 100:$0.3630
  • 1000:$0.2910
  • 5000:$0.2450
BSZ120P03NS3GATMA1
DISTI # 2617428		Infineon Technologies AGMOSFET, P-CH, -30V, -40A, PG-TSDSON-8
RoHS: Compliant		2068
  • 1:$1.3100
  • 10:$1.1500
  • 100:$0.8840
BSZ120P03NS3GATMA1
DISTI # 2617428		Infineon Technologies AGMOSFET, P-CH, -30V, -40A, PG-TSDSON-8
RoHS: Compliant		2068
  • 5:£0.4850
  • 25:£0.4480
  • 100:£0.2780
  • 250:£0.2590
  • 500:£0.2410
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Mfr.#: TYS5040220M-10

OMO.#: OMO-TYS5040220M-10

 Fixed Inductors 22uH 20% -40C +125C
NB12K00103JBB

Mfr.#: NB12K00103JBB

OMO.#: OMO-NB12K00103JBB-AVX

 Thermistors - NTC 10K OHM 5%
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OMO.#: OMO-TYS5040220M-10-LAIRD-TECHNOLOGIES

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1987
Menge eingeben:
Der aktuelle Preis von BSZ120P03NS3 G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,67 $
0,67 $
10
0,56 $
5,62 $
100
0,36 $
36,30 $
1000
0,29 $
291,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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