SIR850DP-T1-GE3

SIR850DP-T1-GE3
Mfr. #:
SIR850DP-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 25V 30A PPAK SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIR850DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Serie
SIRxxxDP
Verpackung
Spule
Teil-Aliasnamen
SIR850DP-GE3
Gewichtseinheit
0.017870 oz
Montageart
SMD/SMT
Paket-Koffer
SO-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
41.7 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
11 ns
Anstiegszeit
20 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
30 A
Vds-Drain-Source-Breakdown-Voltage
25 V
Rds-On-Drain-Source-Widerstand
7.3 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
30 ns
Typische-Einschaltverzögerungszeit
20 ns
Vorwärts-Transkonduktanz-Min
85 S
Kanal-Modus
Erweiterung
Tags
SIR85, SIR8, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIR850DP-T1-GE3 N-channel MOSFET Transistor; 20 A; 25 V; 8-Pin PowerPAK SO
***nell
N CHANNEL MOSFET, 25V, 30A, SOIC, FULL R
***ical
Trans MOSFET N-CH 25V 20.1A 8-Pin PowerPAK SO T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.009Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; Product Range:- Rohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
SIR850DP-T1-GE3
DISTI # SIR850DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 25V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2121In Stock
  • 1000:$0.5438
  • 500:$0.6889
  • 100:$0.8883
  • 10:$1.1240
  • 1:$1.2700
SIR850DP-T1-GE3
DISTI # SIR850DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 25V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
  • 3000:$0.4928
SIR850DP-T1-GE3
DISTI # SIR850DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 25V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Limited Supply - Call
    SIR850DP-T1-GE3
    DISTI # SIR850DP-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 25V 20.1A 8-Pin PowerPAK SO T/R (Alt: SIR850DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 3000:€0.9099
    • 6000:€0.6529
    • 12000:€0.5289
    • 18000:€0.4679
    • 30000:€0.4479
    SIR850DP-T1-GE3
    DISTI # 11X2603
    Vishay IntertechnologiesMOSFET, N CHANNEL, 25V, 30A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0058ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes0
    • 1:$1.1200
    • 10:$0.9220
    • 25:$0.8510
    • 50:$0.7790
    • 100:$0.7080
    • 500:$0.6090
    • 1000:$0.5340
    SIR850DP-T1-GE3.
    DISTI # 15AC4250
    Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:25V,On Resistance Rds(on):9mohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V,Power Dissipation Pd:4.8W,No. of Pins:8Pins , RoHS Compliant: Yes0
    • 1:$0.5340
    • 3000:$0.5340
    SIR850DP-T1-GE3
    DISTI # 70616567
    Vishay SiliconixSIR850DP-T1-GE3 N-channel MOSFET Transistor,20 A,25 V,8-Pin PowerPAK SO
    RoHS: Compliant
    0
    • 300:$0.7300
    • 600:$0.6700
    • 1500:$0.6200
    • 3000:$0.5500
    SIR850DP-T1-GE3
    DISTI # 781-SIR850DP-T1-GE3
    Vishay IntertechnologiesMOSFET 25V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant
    3715
    • 1:$1.1200
    • 10:$0.9220
    • 100:$0.7080
    • 500:$0.6090
    • 1000:$0.5340
    SIR850DP-T1-GE3
    DISTI # 8141294P
    Vishay IntertechnologiesTRANS MOSFET N-CH 25V 20.1A, RL360
    • 100:£0.4280
    • 200:£0.4120
    SIR850DP-T1-GE3
    DISTI # 2478936
    Vishay IntertechnologiesN CHANNEL MOSFET, 25V, 30A, SOIC, FULL REEL
    RoHS: Compliant
    0
    • 3000:$1.7600
    • 6000:$1.3500
    • 12000:$1.0900
    SIR850DP-T1-GE3Vishay IntertechnologiesMOSFET 25V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant
    Americas -
    • 3000:$0.4640
    • 6000:$0.4380
    • 12000:$0.4250
    • 24000:$0.4190
    SIR850DP-T1-GE3
    DISTI # 2478936
    Vishay IntertechnologiesN CHANNEL MOSFET, 25V, 30A, SOIC, FULL R
    RoHS: Compliant
    0
    • 3000:£0.4690
    Bild Teil # Beschreibung
    SIR850DP-T1-GE3

    Mfr.#: SIR850DP-T1-GE3

    OMO.#: OMO-SIR850DP-T1-GE3

    MOSFET RECOMMENDED ALT 78-SIRA18ADP-T1-GE3
    SIR850DP

    Mfr.#: SIR850DP

    OMO.#: OMO-SIR850DP-1190

    Neu und Original
    SIR850DP-T1-GE3

    Mfr.#: SIR850DP-T1-GE3

    OMO.#: OMO-SIR850DP-T1-GE3-VISHAY

    MOSFET N-CH 25V 30A PPAK SO-8
    SIR850DPT1GE3

    Mfr.#: SIR850DPT1GE3

    OMO.#: OMO-SIR850DPT1GE3-1190

    Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2500
    Menge eingeben:
    Der aktuelle Preis von SIR850DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,63 $
    0,63 $
    10
    0,60 $
    5,97 $
    100
    0,57 $
    56,57 $
    500
    0,53 $
    267,10 $
    1000
    0,50 $
    502,80 $
    Beginnen mit
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