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FGH75N60UFTU

FGH75N60UFTU
Mfr. #:
FGH75N60UFTU
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
IGBT Transistors N-CH / 600V 75A FS Planar
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGH75N60UFTU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FGH75N60UFTU Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247AB-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Maximale Gate-Emitter-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
FGH75N60UF
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
150 A
Höhe:
20.6 mm
Länge:
15.6 mm
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
450
Unterkategorie:
IGBTs
Gewichtseinheit:
0.225401 oz
Tags
FGH75N60UFT, FGH75N60U, FGH75N60, FGH75N, FGH7, FGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 150A 452000mW 3-Pin(3+Tab) TO-247AB Rail
***el Electronic
FAIRCHILD SEMICONDUCTOR FGH75N60UFTU IGBT Single Transistor, General Purpose, 150 A, 600 V, 452 W, 600 V, TO-247AB, 3 Pins
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,FAST,600V,150A,TO247; Transistor Type:IGBT; DC Collector Current:150A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:452W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:452W
***ical
Trans IGBT Chip N=-CH 600V 120A 378000mW 3-Pin(3+Tab) TO-247AB Tube
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,600V,120A,TO247; Transistor Type:IGBT; DC Collector Current:120A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:378W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:378W
*** Source Electronics
Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247
***ure Electronics
FGH40N60UFD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247
***-Wing Technology
FAIRCHILD SEMICONDUCTOR FGH40N60UFDTU IGBT Single Transistor, General Purpose, 80 A, 600 V, 290 W, 600 V, TO-247AB, 3 Pins
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,W DIODE,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W
*** Source Electronics
Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247
***ure Electronics
FGH80N60FD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild's field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,FAST,W/DIO,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W
***ical
Trans IGBT Chip N-CH 600V 110A 3-Pin(3+Tab) TO-247
***i-Key
IGBT 600V 110A 446W TO247
***th Star Micro
Insulated Gate Bipolar Transistor - NPT Standard Speed
***hardson RFPD
POWER IGBT TRANSISTOR
***horized Procurement Solutions
OEMs, CMs ONLY (NO BROKERS)
***et
Trans IGBT Chip N-CH 600V 140A 3-Pin TO-247 Tube
***ark
Igbt, Single, 600V, 140A, To-247; Dc Collector Current:140A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:714W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon SCT
High speed 600 V, 100 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses, PG-TO247-3, RoHS
***ineon
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications
***ical
Trans IGBT Chip N-CH 600V 110A 284000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 110A I(C), 600V V(BR)CES, N-Channel, TO-247
***icroelectronics
60 A, 600 V, very low drop IGBT
*** Electronic Components
IGBT Transistors 60A 600V Very Low Drop IGBT 600Vces
***DA Technology Co., Ltd.
Product Description Demo for Development.
***S
French Electronic Distributor since 1988
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
Teil # Mfg. Beschreibung Aktie Preis
FGH75N60UFTU
DISTI # V36:1790_06359250		ON SemiconductorN-CH / 600V 75A FS PLANAR IGBT0
    FGH75N60UFTU
    DISTI # V99:2348_06359250    		ON SemiconductorN-CH / 600V 75A FS PLANAR IGBT0
      FGH75N60UFTU
      DISTI # FGH75N60UFTU-ND      		ON SemiconductorIGBT 600V 150A 452W TO247
      RoHS: Compliant
      Min Qty: 450
      Container: Tube      		Temporarily Out of Stock
      • 450:$5.3231
      FGH75N60UFTU
      DISTI # 26942082      		ON SemiconductorN-CH / 600V 75A FS PLANAR IGBT1800
      • 450:$4.9215
      FGH75N60UFTU
      DISTI # 32425583      		ON SemiconductorN-CH / 600V 75A FS PLANAR IGBT450
      • 450:$5.7344
      FGH75N60UFTU
      DISTI # FGH75N60UFTU      		ON SemiconductorTrans IGBT Chip N-CH 600V 150A 3-Pin(3+Tab) TO-247AB Tube - Rail/Tube (Alt: FGH75N60UFTU)
      RoHS: Compliant
      Min Qty: 450
      Container: Tube      		Americas - 0
      • 450:$3.7111
      • 900:$3.6870
      • 1800:$3.6397
      • 2700:$3.5937
      • 4500:$3.5049
      FGH75N60UFTU
      DISTI # FGH75N60UFTU      		ON SemiconductorTrans IGBT Chip N-CH 600V 150A 3-Pin(3+Tab) TO-247AB Tube (Alt: FGH75N60UFTU)
      RoHS: Compliant
      Min Qty: 1
      Container: Tube      		Europe - 0
      • 1:€4.1900
      • 10:€3.8900
      • 25:€3.7900
      • 50:€3.6900
      • 100:€3.5900
      • 500:€3.4900
      • 1000:€3.4900
      FGH75N60UFTU
      DISTI # 41T0518      		ON SemiconductorIGBT,N CHANNEL,FAST,600V,150A,TO247,DC Collector Current:150A,Collector Emitter Saturation Voltage Vce(on):600V,Power Dissipation Pd:452W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°CRoHS Compliant: Yes0
      • 250:$5.2700
      • 100:$5.5100
      • 50:$5.9100
      • 25:$6.3000
      • 10:$6.5900
      • 1:$7.2600
      FGH75N60UFTU.
      DISTI # 29AC6334      		Fairchild Semiconductor CorporationFSPIGBT TO247 75A 600V ROHS COMPLIANT: YES0
      • 4500:$3.5100
      • 2700:$3.6000
      • 1800:$3.6400
      • 900:$3.6900
      • 1:$3.7200
      FGH75N60UFTUON SemiconductorFGH75N60 Series 600 V 75 A 27 ns Through Hole Field Stop IGBT - TO-247-3
      RoHS: Compliant      		465Tube
      • 5:$5.1200
      • 25:$4.3700
      • 100:$4.0800
      FGH75N60UFTU
      DISTI # 512-FGH75N60UFTU      		ON SemiconductorIGBT Transistors N-CH / 600V 75A FS Planar
      RoHS: Compliant      		99
      • 1:$6.7600
      • 10:$6.1100
      • 25:$5.8300
      • 100:$5.0600
      • 250:$4.8300
      • 500:$4.4100
      FGH75N60UFTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel
      RoHS: Compliant      		Europe - 60
        FGH75N60UFTU
        DISTI # 1885739        		ON SemiconductorIGBT,N CH,FAST,600V,150A,TO247
        RoHS: Compliant        		0
        • 100:£3.9800
        • 50:£4.2800
        • 10:£4.5800
        • 5:£5.3000
        • 1:£5.8300
        FGH75N60UFTU
        DISTI # 1885739        		ON SemiconductorIGBT,N CH,FAST,600V,150A,TO247
        RoHS: Compliant        		0
        • 500:$6.6500
        • 250:$7.2800
        • 100:$7.6300
        • 25:$8.7900
        • 10:$9.2100
        • 1:$10.1900
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        Verfügbarkeit
        Aktie:
        99
        Auf Bestellung:
        2082
        Menge eingeben:
        Der aktuelle Preis von FGH75N60UFTU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        6,76 $
        6,76 $
        10
        6,11 $
        61,10 $
        25
        5,83 $
        145,75 $
        100
        5,06 $
        506,00 $
        250
        4,83 $
        1 207,50 $
        500
        4,41 $
        2 205,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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