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AUIRF1010EZSTRL

AUIRF1010EZSTRL
Mfr. #:
AUIRF1010EZSTRL
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AUIRF1010EZSTRL Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
44 A
Rds On - Drain-Source-Widerstand:
8.5 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
140 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Abfallzeit:
54 ns
Produktart:
MOSFET
Anstiegszeit:
90 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
38 ns
Typische Einschaltverzögerungszeit:
19 ns
Teil # Aliase:
SP001520896
Gewichtseinheit:
0.139332 oz
Tags
AUIRF1010EZST, AUIRF1010EZS, AUIRF1010E, AUIRF1010, AUIRF10, AUIRF1, AUIRF, AUIR, AUI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 60V 84A Automotive 3-Pin(2+Tab) D2PAK T/R
***(Formerly Allied Electronics)
AUTOMOTIVE MOSFET 60V, 84A, 8.5 MOHM, 58 NC QG, D2PAK
*** Electronic Components
MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms
***(Formerly Allied Electronics)
IRF1010EZSPBF N-channel MOSFET Transistor; 84 A; 60 V; 3-Pin D2PAK
***ure Electronics
Single N-Channel 60 V 8.5 mOhm 86 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***ow.cn
Trans MOSFET N-CH Si 60V 84A Automotive 3-Pin(2+Tab) D2PAK T/R
***roFlash
Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:75A; On Resistance Rds(On):0.0068Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***ernational Rectifier
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
***Yang
Trans MOSFET N-CH 60V 79A 3-Pin(2+Tab) D2PAK Tube - Rail/Tube
***nell
MOSFET, N-CH, 60V, 79A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7100µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:110W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon SCT
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
***ineon
Benefits: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***nell
MOSFET, N-CH, 75V, 85A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 85A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0056ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V;
***ineon
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant; StrongIRFET
***inecomponents.com
PWR MOS ULTRAFET 55V/75A/0.008 OHM N-CHANNEL TO-263AB T&R
***ponent Stockers USA
75 A 55 V 0.008 ohm N-CHANNEL Si POWER MOSFET TO-263AB
***et
TRANS MOSFET N-CH 55V 75A 3PIN TO-263AB
*** Services
CoC and 2-years warranty / RFQ for pricing
***i-Key
MOSFET N-CH 55V 75A D2PAK
***ser
MOSFETs 75a,55V,0.008Ohm,NCh UltraFET
***Yang
PWR MOS ULTRAFET 55V/75A/0.008 OHM N-CHANNEL TO-263AB - Bulk
***ponent Stockers USA
75 A 55 V 0.008 ohm N-CHANNEL Si POWER MOSFET TO-263AB
***Yang
MOSFET N-CH 55V 75A D2PAK - Bulk
***ser
MOSFETs 75a,55V,0.008Ohm,NCh UltraFET
Teil # Mfg. Beschreibung Aktie Preis
AUIRF1010EZSTRL
DISTI # 23170016		Infineon Technologies AGTrans MOSFET N-CH Si 60V 84A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		800
  • 800:$1.0560
AUIRF1010EZSTRL
DISTI # AUIRF1010EZSTRL-ND		Infineon Technologies AGMOSFET N-CH 60V 75A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 800:$1.4021
AUIRF1010EZSTRL
DISTI # AUIRF1010EZSTRL		Infineon Technologies AGTrans MOSFET N-CH 60V 84A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: AUIRF1010EZSTRL)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$1.1619
  • 1600:$1.1199
  • 3200:$1.0789
  • 4800:$1.0429
  • 8000:$1.0249
AUIRF1010EZSTRL
DISTI # SP001520896		Infineon Technologies AGTrans MOSFET N-CH 60V 84A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001520896)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 0
  • 800:€1.3559
  • 1600:€1.1299
  • 3200:€1.0429
  • 4800:€0.9679
  • 8000:€0.9039
AUIRF1010EZSTRL
DISTI # 70019320		Infineon Technologies AGAUTOMOTIVE MOSFET 60V,84A,8.5 MOHM,58 NC QG,D2PAK
RoHS: Compliant		0
  • 800:$1.9400
  • 1600:$1.9010
  • 4000:$1.8430
  • 8000:$1.7650
  • 20000:$1.6490
AUIRF1010EZSTRL
DISTI # 942-AUIRF1010EZSTRL		Infineon Technologies AGMOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms
RoHS: Compliant		49
  • 1:$2.2300
  • 10:$1.8900
  • 100:$1.5100
  • 500:$1.3300
  • 800:$1.1000
Bild Teil # Beschreibung
C0603C104J3RACTU

Mfr.#: C0603C104J3RACTU

OMO.#: OMO-C0603C104J3RACTU

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 25V 0.1uF 0603 X7R 5%
C0603C101J5GALTU

Mfr.#: C0603C101J5GALTU

OMO.#: OMO-C0603C101J5GALTU-KEMET

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 50volts 100pF C0G 5%
C0603C104J3RACTU

Mfr.#: C0603C104J3RACTU

OMO.#: OMO-C0603C104J3RACTU-KEMET

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 25volts 0.1uF X7R 5%
Verfügbarkeit
Aktie:
843
Auf Bestellung:
2826
Menge eingeben:
Der aktuelle Preis von AUIRF1010EZSTRL dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,84 $
2,84 $
10
2,41 $
24,10 $
100
1,93 $
193,00 $
500
1,48 $
740,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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