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SIHJ6N65E-T1-GE3

SIHJ6N65E-T1-GE3
Mfr. #:
SIHJ6N65E-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 650V Vds 30V Vgs PowerPAK SO-8L
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHJ6N65E-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHJ6N65E-T1-GE3 DatasheetSIHJ6N65E-T1-GE3 Datasheet (P4-P6)SIHJ6N65E-T1-GE3 Datasheet (P7-P9)SIHJ6N65E-T1-GE3 Datasheet (P10-P11)
ECAD Model:
Mehr Informationen:
SIHJ6N65E-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8L-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
5.6 A
Rds On - Drain-Source-Widerstand:
755 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
16 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
74 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
E
Marke:
Vishay / Siliconix
Abfallzeit:
17 ns
Produktart:
MOSFET
Anstiegszeit:
14 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
25 ns
Typische Einschaltverzögerungszeit:
14 ns
Gewichtseinheit:
0.017870 oz
Tags
SIHJ, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 5.6A 5-Pin(4+Tab) PowerPAK SO T/R
***nell
MOSFET, N-CH, 650V, 5.6A, POWERPAKSO
***ark
Mosfet, N-Ch, 650V, 5.6A, Powerpakso; Transistor Polarity:n Channel; Continuous Drain Current Id:5.6A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.755Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
600V/650V E Series PowerPAK SO-8L MOSFETs
Vishay 600V/650V E Series PowerPAK® SO-8L MOSFETs offer increased reliability and reduced package inductance for lighting, industrial, telecom, computing, and consumer applications. Built on Vishay's Superjunction technology, these power MOSFETs feature low maximum ON-resistance down to 0.52Ω at 10V, ultra-low gate charge down to 17nC, and low gate charge times ON-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications.Learn More
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHJ6N65E-T1-GE3
DISTI # V72:2272_17581231		Vishay IntertechnologiesTrans MOSFET N-CH 650V 5.6A 5-Pin(4+Tab) PowerPAK SO T/R
RoHS: Compliant		810
  • 75000:$0.9171
  • 30000:$0.9327
  • 15000:$0.9484
  • 6000:$0.9641
  • 3000:$0.9797
  • 1000:$0.9954
  • 500:$1.1963
  • 250:$1.2280
  • 100:$1.3644
  • 50:$1.4241
  • 25:$1.5823
  • 10:$1.7581
  • 1:$2.3217
SIHJ6N65E-T1-GE3
DISTI # SIHJ6N65E-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 650V POWERPAK SO-8L
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3820In Stock
  • 1000:$1.0773
  • 500:$1.3002
  • 100:$1.5826
  • 10:$1.9690
  • 1:$2.1900
SIHJ6N65E-T1-GE3
DISTI # SIHJ6N65E-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 650V POWERPAK SO-8L
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3820In Stock
  • 1000:$1.0773
  • 500:$1.3002
  • 100:$1.5826
  • 10:$1.9690
  • 1:$2.1900
SIHJ6N65E-T1-GE3
DISTI # SIHJ6N65E-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 650V POWERPAK SO-8L
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 6000:$0.9378
  • 3000:$0.9738
SIHJ6N65E-T1-GE3
DISTI # 25817575		Vishay IntertechnologiesTrans MOSFET N-CH 650V 5.6A 5-Pin(4+Tab) PowerPAK SO T/R
RoHS: Compliant		810
  • 8:$2.3217
SIHJ6N65E-T1-GE3
DISTI # SIHJ6N65E-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 5.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIHJ6N65E-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
    SIHJ6N65E-T1-GE3
    DISTI # SIHJ6N65E-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 650V 5.6A 8-Pin PowerPAK SO T/R (Alt: SIHJ6N65E-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.9019
    • 18000:€0.9529
    • 12000:€1.0739
    • 6000:€1.3019
    • 3000:€1.8579
    SIHJ6N65E-T1-GE3
    DISTI # 20AC3839    		Vishay IntertechnologiesN-CHANNEL 650V0
    • 10000:$0.8590
    • 6000:$0.8940
    • 4000:$0.9280
    • 2000:$1.0300
    • 1000:$1.0900
    • 1:$1.1600
    SIHJ6N65E-T1-GE3
    DISTI # 01AC4965    		Vishay IntertechnologiesMOSFET, N-CH, 650V, 5.6A, POWERPAKSO,Transistor Polarity:N Channel,Continuous Drain Current Id:5.6A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.755ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes1006
    • 500:$1.3800
    • 250:$1.4700
    • 100:$1.5400
    • 50:$1.6700
    • 25:$1.8100
    • 10:$1.9400
    • 1:$2.3000
    SIHJ6N65E-T1-GE3
    DISTI # 78-SIHJ6N65E-T1-GE3    		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs PowerPAK SO-8L
    RoHS: Compliant    		5957
    • 1:$2.1300
    • 10:$1.7700
    • 100:$1.3700
    • 500:$1.2000
    SIHJ6N65E-T1-GE3
    DISTI # 2630942    		Vishay IntertechnologiesMOSFET, N-CH, 650V, 5.6A, POWERPAKSO1008
    • 500:£0.8250
    • 250:£0.8860
    • 100:£0.9450
    • 10:£1.2300
    • 1:£1.6700
    SIHJ6N65E-T1-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs PowerPAK SO-8L
    RoHS: Compliant    		Americas -
      SIHJ6N65E-T1-GE3
      DISTI # 2630942      		Vishay IntertechnologiesMOSFET, N-CH, 650V, 5.6A, POWERPAKSO
      RoHS: Compliant      		1006
      • 3000:$1.7800
      • 500:$1.8100
      • 100:$2.0600
      • 10:$2.6700
      • 1:$3.2100
      Bild Teil # Beschreibung
      SIHJ6N65E-T1-GE3

      Mfr.#: SIHJ6N65E-T1-GE3

      OMO.#: OMO-SIHJ6N65E-T1-GE3

      		 MOSFET 650V Vds 30V Vgs PowerPAK SO-8L
      SIHJ6N65E-T1-GE3

      Mfr.#: SIHJ6N65E-T1-GE3

      OMO.#: OMO-SIHJ6N65E-T1-GE3-VISHAY

      		 MOSFET N-CH 650V POWERPAK SO-8L
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1988
      Menge eingeben:
      Der aktuelle Preis von SIHJ6N65E-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,13 $
      2,13 $
      10
      1,77 $
      17,70 $
      100
      1,37 $
      137,00 $
      500
      1,20 $
      600,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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