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CG2H40010F

CG2H40010F
Mfr. #:
CG2H40010F
Hersteller:
N/A
Beschreibung:
RF JFET Transistors GaN HEMT DC-8.0GHz, 10 Watt
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CG2H40010F Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CG2H40010F Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Cree, Inc.
Produktkategorie:
HF-JFET-Transistoren
RoHS:
Y
Transistortyp:
HEMT
Technologie:
GaN
Gewinnen:
16.5 dB
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
120 V
Vgs - Gate-Source-Durchbruchspannung:
- 10 V, 2 V
Id - Kontinuierlicher Drainstrom:
1.5 A
Ausgangsleistung:
10 W
Maximale Drain-Gate-Spannung:
-
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
-
Montageart:
Schraubbefestigung
Paket / Koffer:
440166
Verpackung:
Tablett
Arbeitsfrequenz:
DC to 6 GHz
Marke:
Wolfspeed / Cree
Vorwärtstranskonduktanz - Min:
-
Produktart:
HF-JFET-Transistoren
Werkspackungsmenge:
250
Unterkategorie:
Transistoren
Vgs th - Gate-Source-Schwellenspannung:
- 2.7 V
Tags
CG2H400, CG2H4, CG2H, CG2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CG2H40xx & CG2H30xx GaN HEMTs
Wolfspeed / Cree CG2H40xx and CG2H30xx GaN HEMTs are high electron mobility transistors operate from 28V rail. The CG2H40xx and CG2H30xx transistors offer a general purpose broadband solution to a variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capabilities of these HEMTs make it ideal for linear and compressed amplifier circuits. The CG2H40xx and CG2H30xx transistors are available in different packages which includes screw down, flange, solder down, pill packages, and 2-lead flange packages. Typical applications include broadband amplifiers, cellular infrastructure, and radar.Learn more
Teil # Mfg. Beschreibung Aktie Preis
CG2H40010F
DISTI # V36:1790_22404192		Cree, Inc.RF POWER TRANSISTOR0
  • 125000:$57.8500
  • 25000:$58.6800
  • 2500:$60.4200
  • 250:$60.7300
CG2H40010F
DISTI # CG2H40010F-ND		WolfspeedRF MOSFET HEMT 28V 440166
RoHS: Compliant
Min Qty: 1
Container: Tray		77In Stock
  • 1:$49.8000
CG2H40010F
DISTI # 941-CG2H40010F		Cree, Inc.RF JFET Transistors GaN HEMT DC-8.0GHz, 10 Watt
RoHS: Compliant		377
  • 1:$55.8800
CG2H40010F
DISTI # CG2H40010F		WolfspeedRF POWER TRANSISTOR
RoHS: Compliant		138
  • 1:$50.9100
CG2H40010F-TB
DISTI # CG2H40010F-TB		WolfspeedRF TRANSISTOR TEST FIXTURE
RoHS: Compliant		2
  • 1:$632.5000
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Verfügbarkeit
Aktie:
377
Auf Bestellung:
2360
Menge eingeben:
Der aktuelle Preis von CG2H40010F dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
55,88 $
55,88 $
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