FDMS86322

FDMS86322
Mfr. #:
FDMS86322
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 80V N-Channel PowerTrench MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMS86322 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDMS86322 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-56-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
13 A
Rds On - Drain-Source-Widerstand:
7.65 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
55 nC
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
104 W
Aufbau:
Single
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
6 mm
Serie:
FDMS86322
Transistortyp:
1 N-Channel
Breite:
5 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
45 S
Abfallzeit:
13 ns
Produktart:
MOSFET
Anstiegszeit:
20 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.002402 oz
Tags
FDMS8632, FDMS863, FDMS86, FDMS8, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 80 V 7.65 mO 55 nC SMT PowerTrench® Mosfet - PQFN-8
***Semiconductor
N-Channel Shielded Gate PowerTrench® MOSFET 80V, 60A, 7.65mΩ
***p One Stop Global
Trans MOSFET N-CH 80V 13A 8-Pin Power 56 T/R
***Components
MOSFET PowerTrench canal N 80 V Power5
***ark
Fet 80V 7.65 Mohm Pqfn56 Rohs Compliant: Yes
***i-Key
MOSFET N-CH 80V 60A LL POWER56
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***ment14 APAC
MOSFET, N CH, 80V, 60A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0061ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Teil # Mfg. Beschreibung Aktie Preis
FDMS86322
DISTI # FDMS86322TR-ND
ON SemiconductorMOSFET N-CH 80V 60A LL POWER56
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.8197
FDMS86322
DISTI # FDMS86322CT-ND
ON SemiconductorMOSFET N-CH 80V 60A LL POWER56
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.9069
  • 500:$1.0945
  • 100:$1.4072
  • 10:$1.7510
  • 1:$1.9400
FDMS86322
DISTI # FDMS86322DKR-ND
ON SemiconductorMOSFET N-CH 80V 60A LL POWER56
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.9069
  • 500:$1.0945
  • 100:$1.4072
  • 10:$1.7510
  • 1:$1.9400
FDMS86322
DISTI # FDMS86322
ON SemiconductorTrans MOSFET N-CH 80V 13A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS86322)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.7209
  • 6000:$0.7159
  • 12000:$0.7069
  • 18000:$0.6979
  • 30000:$0.6809
FDMS86322
DISTI # FDMS86322
ON SemiconductorTrans MOSFET N-CH 80V 13A 8-Pin Power 56 T/R (Alt: FDMS86322)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    FDMS86322
    DISTI # FDMS86322
    ON SemiconductorTrans MOSFET N-CH 80V 13A 8-Pin Power 56 T/R (Alt: FDMS86322)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 3000:€1.0659
    • 6000:€0.8719
    • 12000:€0.7999
    • 18000:€0.7379
    • 30000:€0.6849
    FDMS86322.
    DISTI # 29AC6272
    Fairchild Semiconductor CorporationFET 80V 7.65 MOHM PQFN56 ROHS COMPLIANT: YES0
    • 1:$0.7740
    • 3000:$0.7650
    • 6000:$0.7550
    • 12000:$0.7460
    FDMS86322Fairchild Semiconductor CorporationPower Field-Effect Transistor, 13A I(D), 80V, 0.00765ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
    RoHS: Compliant
    28814
    • 1000:$0.8000
    • 500:$0.8500
    • 100:$0.8800
    • 25:$0.9200
    • 1:$0.9900
    FDMS86322
    DISTI # 512-FDMS86322
    ON SemiconductorMOSFET 80V N-Channel PowerTrench MOSFET
    RoHS: Compliant
    182
    • 1:$1.6300
    • 10:$1.3800
    • 100:$1.1100
    • 500:$0.9670
    • 1000:$0.8010
    • 3000:$0.7460
    • 6000:$0.7180
    • 9000:$0.6900
    FDMS86322Fairchild Semiconductor Corporation13 A, 80 V, 0.00765 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240AA548
    • 354:$0.7875
    • 160:$0.8505
    • 1:$1.8900
    FDMS86322
    DISTI # 7599642P
    ON SemiconductorMOSFET N-CHANNEL 80V 13A POWER 56, RL42
    • 30:£0.7450
    • 150:£0.7150
    • 750:£0.6900
    • 1500:£0.6600
    Bild Teil # Beschreibung
    DDZ9699T-7

    Mfr.#: DDZ9699T-7

    OMO.#: OMO-DDZ9699T-7

    Zener Diodes 150MW 12V
    MMSZ5262BT1G

    Mfr.#: MMSZ5262BT1G

    OMO.#: OMO-MMSZ5262BT1G

    Zener Diodes 51V 500mW
    BSP297H6327XTSA1

    Mfr.#: BSP297H6327XTSA1

    OMO.#: OMO-BSP297H6327XTSA1

    MOSFET N-Ch 200V 660mA SOT-223-3
    C3225X7S2A475M200AE

    Mfr.#: C3225X7S2A475M200AE

    OMO.#: OMO-C3225X7S2A475M200AE

    Multilayer Ceramic Capacitors MLCC - SMD/SMT SOFT 1210 100V 4.7uF X7S 20% T:2mm
    FH28D-20S-0.5SH(05)

    Mfr.#: FH28D-20S-0.5SH(05)

    OMO.#: OMO-FH28D-20S-0-5SH-05--HIROSE

    FFC & FPC Connectors 20P F SCKT HORIZ SMT STNDRD DUST CVR TYPE
    RN73C1J24K9BTDF

    Mfr.#: RN73C1J24K9BTDF

    OMO.#: OMO-RN73C1J24K9BTDF-TE-CONNECTIVITY-AMP

    Thin Film Resistors - SMD RN 0603 24K9 0.1% 10PPM 1K RL
    RP73D1J107KBTDG

    Mfr.#: RP73D1J107KBTDG

    OMO.#: OMO-RP73D1J107KBTDG-1092

    Thin Film Resistors - SMD
    DDZ9699T-7

    Mfr.#: DDZ9699T-7

    OMO.#: OMO-DDZ9699T-7-DIODES

    DIODE ZENER 12V 150MW SOD523
    C3216X7S2A225K160AB

    Mfr.#: C3216X7S2A225K160AB

    OMO.#: OMO-C3216X7S2A225K160AB-TDK

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 2.2uF 100volts X7S 10%
    BSP297H6327XTSA1

    Mfr.#: BSP297H6327XTSA1

    OMO.#: OMO-BSP297H6327XTSA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 200V 660MA SOT-223
    Verfügbarkeit
    Aktie:
    64
    Auf Bestellung:
    2047
    Menge eingeben:
    Der aktuelle Preis von FDMS86322 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,63 $
    1,63 $
    10
    1,38 $
    13,80 $
    100
    1,11 $
    111,00 $
    500
    0,97 $
    483,50 $
    1000
    0,80 $
    801,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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