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IRFR224TRLPBF

IRFR224TRLPBF
Mfr. #:
IRFR224TRLPBF
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET N-Chan 250V 3.8 Amp
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFR224TRLPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFR224TRLPBF DatasheetIRFR224TRLPBF Datasheet (P4-P6)IRFR224TRLPBF Datasheet (P7-P9)IRFR224TRLPBF Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Verpackung:
Spule
Serie:
IRFR
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.050717 oz
Tags
IRFR224T, IRFR224, IRFR22, IRFR2, IRFR, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET N-CH 250V 3.8A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 250V 3.8A DPAK
***et
MOSFET N-CHANNEL 250V
***enic
TO-252-3 MOSFETs ROHS
*** Europe
N-CH SINGLE 250V TO252
***
250V N-CH HEXFET D-PAK
***ure Electronics
Single N-Channel 250 V 1.1 Ohm 42 W Surface Mount Power Mosfet - TO-252-3
***ark
N Channel Mosfet, 250V, 3.8A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:3.8A; On Resistance Rds(On):1.1Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
*** Stop Electro
Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3.8 / Drain-Source Voltage (Vds) V = 250 / ON Resistance (Rds(on)) Ohm = 1.1 / Gate-Source Voltage V = 20 / Fall Time ns = 12 / Rise Time ns = 13 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 42
***th Star Micro
Transistor MOSFET N-CH 200V 4.8A 3-Pin (2+Tab) DPAK
***ure Electronics
Single N-Channel 200 V 0.8 Ohms Surface Mount Power Mosfet - TO-252
***SIT Distribution GmbH
Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:4.8A; On Resistance, Rds(on):800mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 200V, 4.8A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):800mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.8A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:19A; SMD Marking:IRFR220; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 200 V 0.8 Ohms Surface Mount Power Mosfet - TO-252
***SIT Distribution GmbH
Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ark
Channel Type:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.8A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:42W; No. Of Pins:3Pins Rohs Compliant: No
***emi
N-Channel Power MOSFET, QFET®, 250 V, 4.4 A, 1 Ω, DPAK
***r Electronics
Power Field-Effect Transistor, 4.4A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***i-Key
MOSFET P-CH 250V 4.7A DPAK
***ser
MOSFETs 250V P-Ch QFET
***-Wing Technology
P-CHANNEL POWER MOSFET
***horized Procurement Solutions
OEMs, CMs ONLY (NO BROKERS)
***el Nordic
Contact for details
***emi
N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 3.8 A, 1.2 Ω, DPAK
***nell
MOSFET, N-CH, 200V, 3.8A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.8A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.94ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 37W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: QFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***r Electronics
Power Field-Effect Transistor, 3.8A I(D), 200V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
IRFR224TRLPBF
DISTI # IRFR224TRLPBF-ND		Vishay SiliconixMOSFET N-CH 250V 3.8A DPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.7425
IRFR224TRLPBF
DISTI # IRFR224TRLPBF		Vishay IntertechnologiesTrans MOSFET N-CH 250V 3.8A 3-Pin(2+Tab) DPAK T/R (Alt: IRFR224TRLPBF)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.6179
  • 6000:€0.4219
  • 12000:€0.3629
  • 18000:€0.3349
  • 30000:€0.3119
IRFR224TRLPBF
DISTI # IRFR224TRLPBF		Vishay IntertechnologiesTrans MOSFET N-CH 250V 3.8A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR224TRLPBF)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.5069
  • 6000:$0.4919
  • 12000:$0.4719
  • 18000:$0.4589
  • 30000:$0.4469
IRFR224TRLPBF
DISTI # 844-IRFR224TRLPBF		Vishay IntertechnologiesMOSFET N-Chan 250V 3.8 Amp
RoHS: Compliant		0
  • 1:$1.2900
  • 10:$1.0600
  • 100:$0.8130
  • 500:$0.6990
  • 1000:$0.5520
  • 3000:$0.5150
  • 6000:$0.4900
  • 9000:$0.4710
IRFR224TRLPBFVishay IntertechnologiesMOSFET N-Chan 250V 3.8 Amp
RoHS: Compliant		Americas -
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von IRFR224TRLPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,28 $
    1,28 $
    10
    1,05 $
    10,50 $
    100
    0,81 $
    81,20 $
    500
    0,70 $
    349,00 $
    1000
    0,55 $
    551,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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