IRFZ44VZSPBF

Mfr. #:: IRFZ44VZSPBF
Hersteller:: Infineon / IR
Beschreibung:: MOSFET MOSFT 60V 57A 12mOhm 43nC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRFZ44VZSPBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRFZ44VZSPBF Datasheet IRFZ44VZSPBF Datasheet (P4-P6)IRFZ44VZSPBF Datasheet (P7-P9)IRFZ44VZSPBF Datasheet (P10-P12)
ECAD Model:
Mehr Informationen:: IRFZ44VZSPBF Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TO-263-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 60 V

Id - Kontinuierlicher Drainstrom:: 57 A

Rds On - Drain-Source-Widerstand:: 9.6 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 4 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 43 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 92 W

Aufbau:: Single

Verpackung:: Rohr

Höhe:: 4.4 mm

Länge:: 10 mm

Transistortyp:: 1 N-Channel

Breite:: 9.25 mm

Marke:: Infineon / IR

Abfallzeit:: 38 ns

Produktart:: MOSFET

Anstiegszeit:: 62 ns

Werkspackungsmenge:: 1000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 35 ns

Typische Einschaltverzögerungszeit:: 14 ns

Teil # Aliase:: SP001557886

Gewichtseinheit:: 0.139332 oz

Tags: IRFZ44VZS, IRFZ44VZ, IRFZ44V, IRFZ44, IRFZ4, IRFZ, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFZ44VZSPBF Bewertungen und Rezensionen

R***a

Very nice set of resistors.

2019-03-10

S***v

Diodes come, all normal.

2019-04-18

S***l

I received too late

2019-01-26

IRFZ44VZSPBF Beschreibung

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 60V, 57A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:92W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:57A; Junction to Case Thermal Resistance A:1.64°C/W; On State resistance @ Vgs = 10V:12mohm; Package / Case:D2-PAK; Power Dissipation Pd:92W; Power Dissipation Pd:92W; Pulse Current Idm:230A; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 72A;D2Pak;PD 150W;VGS +/-20V

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***et: Trans MOSFET N-CH 60V 72A 3-Pin(2+Tab) D2PAK

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 60V, 72A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:72A; Junction to Case Thermal Resistance A:1°C/W; Package / Case:D2-PAK; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Power Dissipation on 1 Sq. PCB:150W; Pulse Current Idm:290A; SMD Marking:FZ48VS; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***ark: Mosfet Transistor, N Channel, 64 A, 55 V, 14 Mohm, 10 V, 4 V

***(Formerly Allied Electronics): MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 14 Milliohms; ID 64A; D2Pak; PD 130W; VGS +/-20V

***ure Electronics: Single N-Channel 55 V 14 mOhm 81 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***p One Stop Global: Trans MOSFET N-CH Si 55V 64A 3-Pin(2+Tab) D2PAK Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 130 W

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***nell: MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 64A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation P

***icroelectronics: N-Channel 60V - 0.014Ohm - 60A - D2APK StripFET(TM) II POWER MOSFET

***ical: Trans MOSFET N-CH 60V 60A Automotive 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: N-Channel 60 V 0.016 Ohm Surface Mount STripFET II Power MosFet - D2PAK

***ment14 APAC: MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:110W; Operating Temperature Range:-65°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:360mJ; Capacitance Ciss Typ:1810pF; Current Iar:30A; Current Id Max:60A; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; On State resistance @ Vgs = 10V:16mohm; Package / Case:D2-PAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:240A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.023Ohm;ID 48A;D2Pak;PD 110W;VGS +/-20V;-55

***ure Electronics: Single N-Channel 60V 23 mOhm 60 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH Si 60V 48A 3-Pin(2+Tab) D2PAK Tube

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: MOSFET; Transistor Type:MOSFET; Continuous Drain Current, Id:48A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):23mohm; Rds(on) Test Voltage, Vgs:10V; Power Dissipation, Pd:110W; Continuous Drain Current - 100 Deg C:34A RoHS Compliant: Yes

***ment14 APAC: N CHANNEL MOSFET, 60V, 48A, D2-PAK; Tran; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:60V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:D2-PAK; Current Id Max:48A; Junction to Case Thermal Resistance A:1.4°C/W; On State resistance @ Vgs = 10V:23mohm; Package / Case:D2-PAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:192A; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***icroelectronics: N-channel 60 V, 0.012 Ohm typ., 60 A STripFET II Power MOSFET in a D2PAK package

***ure Electronics: STB60NF06LT Series 60 V 14 mOhm 60 A N-Channel STripFET II Power Mosfet-D2PAK-3

***ical: Trans MOSFET N-CH 60V 60A Automotive 3-Pin(2+Tab) D2PAK T/R

***el Electronic: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ark: N CHANNEL MOSFET, 60V, 60A, D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

***nell: MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.016ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 110W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Avalanche Single Pulse Energy Eas: 320mJ; Capacitance Ciss Typ: 2000pF; Current Id Max: 60A; Junction Temperature Tj Max: 175°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +175°C; Pulse Current Idm: 240A; Termination Type: Surface Mount Device; Voltage Vds Typ: 60V; Voltage Vgs Max: 1V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Min: 1V

***icroelectronics: N-Channel 60V - 0.017Ohm - 50A - D2PAK StripFET(TM) II POWER MOSFET

***va Crawler: N-channel 60 V, 0.015 Ohm, 50 A STripFET(TM) II Power MOSFET in D2PAK package

*** Source Electronics: Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 60V 50A D2PAK

***ure Electronics: N-Channel 60 V 0.018 Ohm Surface Mount STripFET II Power MosFet - D2PAK

***r Electronics: Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N CH, 60V, 50A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:27.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:50A; Package / Case:D2-PAK; Power Dissipation Pd:110W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

IRFZ44VZSPBF Mehr Informationen

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

Infineon Automatic Opening Systems: Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths and other functions.Learn More

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRFZ44VZSPBF DISTI # IRFZ44VZSPBF-ND	Infineon Technologies AG	MOSFET N-CH 60V 57A D2PAK RoHS: Compliant Min Qty: 1 Container: Tube	518In Stock	1000:$1.1265 500:$1.3596 100:$1.7481 10:$2.1750 1:$2.4100
IRFZ44VZSPBF DISTI # IRFZ44VZSPBF	Infineon Technologies AG	Trans MOSFET N-CH 60V 57A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: IRFZ44VZSPBF) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 9716	1:$1.2319 10:$1.1389 25:$1.1359 50:$1.1329 100:$1.0129 500:$1.0109 1000:$0.9989
IRFZ44VZSPBF. DISTI # 27AC6855	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:57A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:92W,No. of Pins:3Pins RoHS Compliant: Yes	0	1:$2.0800 10:$1.7700 100:$1.4200 500:$1.2400 1000:$1.0300
IRFZ44VZSPBF DISTI # 70018396	Infineon Technologies AG	IRFZ44VZSPBF N-channel MOSFET Transistor,57 A,60 V,3-Pin D2PAK RoHS: Compliant	0	5:$1.9210
IRFZ44VZSPBF DISTI # 942-IRFZ44VZSPBF	Infineon Technologies AG	MOSFET MOSFT 60V 57A 12mOhm 43nC RoHS: Compliant	3537	1:$2.0800 10:$1.7700 100:$1.4200 500:$1.2400 1000:$1.0300
IRFZ44VZSPBF	International Rectifier		1500
IRFZ44VZSPBF DISTI # 6504413	Infineon Technologies AG	MOSFET N-CHANNEL 60V 57A D2PAK, PK	65	5:£1.6180 25:£1.4240 100:£1.2460 250:£1.1640 500:£1.1000
IRFZ44VZSPBF DISTI # 6504413P	Infineon Technologies AG	MOSFET N-CHANNEL 60V 57A D2PAK, TU	20	25:£1.4240 100:£1.2460 250:£1.1640 500:£1.1000
IRFZ44VZSPBF DISTI # IRFZ44VZSPBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,60V,40A,92W,D2PAK	59	1:$1.2400 3:$1.1200 10:$0.9300 50:$0.8000
IRFZ44VZSPBF DISTI # 8659303	Infineon Technologies AG	MOSFET, N, 60V, 57A, D2-PAK RoHS: Compliant	0	1:$3.2900 10:$2.8100 100:$2.2500 500:$1.9700 1000:$1.6300

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1988
Menge eingeben:

Der aktuelle Preis von IRFZ44VZSPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~2,07 $~~; ~~2,07 $~~

10: ~~1,76 $~~; ~~17,60 $~~

100: ~~1,41 $~~; ~~141,00 $~~

500: ~~1,23 $~~; ~~615,00 $~~

1000: ~~1,02 $~~; ~~1 020,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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