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IPB016N06L3GATMA1

IPB016N06L3GATMA1
Mfr. #:
IPB016N06L3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB016N06L3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-7
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
180 A
Rds On - Drain-Source-Widerstand:
1.2 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
166 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
250 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
124 S
Abfallzeit:
38 ns
Produktart:
MOSFET
Anstiegszeit:
79 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
131 ns
Typische Einschaltverzögerungszeit:
35 ns
Teil # Aliase:
G IPB016N06L3 IPB16N6L3GXT SP000453040
Gewichtseinheit:
0.056438 oz
Tags
IPB016, IPB01, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 1.6 mOhm 125 nC OptiMOS™ Power Mosfet - D2PAK-7
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO263-7, RoHS
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
Teil # Mfg. Beschreibung Aktie Preis
IPB016N06L3GATMA1
DISTI # V72:2272_06376928		Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		326
  • 250:$3.7070
  • 100:$3.9090
  • 25:$4.0500
  • 10:$4.5000
  • 1:$5.8190
IPB016N06L3GATMA1
DISTI # V36:1790_06376928		Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$2.3470
  • 500000:$2.3500
  • 100000:$2.5570
  • 10000:$2.9050
  • 1000:$2.9620
IPB016N06L3GATMA1
DISTI # IPB016N06L3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1217In Stock
  • 500:$3.0148
  • 100:$3.5415
  • 10:$4.3220
  • 1:$4.8100
IPB016N06L3GATMA1
DISTI # IPB016N06L3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1217In Stock
  • 500:$3.0148
  • 100:$3.5415
  • 10:$4.3220
  • 1:$4.8100
IPB016N06L3GATMA1
DISTI # IPB016N06L3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 180A TO263-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$2.3451
  • 1000:$2.4686
IPB016N06L3GATMA1
DISTI # 30679642		Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		326
  • 3:$5.8190
IPB016N06L3GXT
DISTI # IPB016N06L3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB016N06L3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 2000
  • 6000:$2.0900
  • 10000:$2.0900
  • 4000:$2.1900
  • 2000:$2.2900
  • 1000:$2.3900
IPB016N06L3GATMA1
DISTI # 50Y2001		Infineon Technologies AGMOSFET Transistor, N Channel, 180 A, 60 V, 0.0012 ohm, 10 V, 1.7 V RoHS Compliant: Yes99
  • 500:$2.8100
  • 250:$3.1300
  • 100:$3.3000
  • 50:$3.4700
  • 25:$3.6400
  • 10:$3.8100
  • 1:$4.4800
IPB016N06L3 G
DISTI # 726-IPB016N06L3G		Infineon Technologies AGMOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
RoHS: Compliant		0
  • 1:$4.4400
  • 10:$3.7700
  • 100:$3.2700
  • 250:$3.1000
  • 500:$2.7800
  • 1000:$2.3500
  • 2000:$2.2300
IPB016N06L3GATMA1
DISTI # 726-IPB016N06L3GATMA		Infineon Technologies AGMOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
RoHS: Compliant		0
  • 1:$4.4400
  • 10:$3.7700
  • 100:$3.2700
  • 250:$3.1000
  • 500:$2.7800
  • 1000:$2.3500
  • 2000:$2.2300
IPB016N06L3GATMA1
DISTI # 2480796RL		Infineon Technologies AGMOSFET, N-CH, 60V, 180A, TO-263-7
RoHS: Compliant		0
  • 2000:$3.3600
  • 1000:$3.5400
  • 500:$4.1900
  • 250:$4.6700
  • 100:$4.9300
  • 10:$5.6800
  • 1:$6.6900
IPB016N06L3GATMA1
DISTI # 2480796		Infineon Technologies AGMOSFET, N-CH, 60V, 180A, TO-263-7
RoHS: Compliant		2099
  • 2000:$3.3600
  • 1000:$3.5400
  • 500:$4.1900
  • 250:$4.6700
  • 100:$4.9300
  • 10:$5.6800
  • 1:$6.6900
IPB016N06L3GATMA1
DISTI # 2480796		Infineon Technologies AGMOSFET, N-CH, 60V, 180A, TO-263-72144
  • 500:£2.1400
  • 250:£2.3900
  • 100:£2.5200
  • 10:£2.9000
  • 1:£3.8200
Bild Teil # Beschreibung
SDSDQAB-008G

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Mfr.#: RFD16N05SM9A

OMO.#: OMO-RFD16N05SM9A

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RFD16N05SM9A

Mfr.#: RFD16N05SM9A

OMO.#: OMO-RFD16N05SM9A-ON-SEMICONDUCTOR

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Mfr.#: SDSDQAB-008G

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von IPB016N06L3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,44 $
4,44 $
10
3,77 $
37,70 $
100
3,27 $
327,00 $
250
3,10 $
775,00 $
500
2,78 $
1 390,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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