FP35R12W2T4BOMA1

FP35R12W2T4BOMA1
Mfr. #:
FP35R12W2T4BOMA1
Hersteller:
Infineon Technologies
Beschreibung:
Trans IGBT Module N-CH 1200V 54A 215000mW Tray
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FP35R12W2T4BOMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
FP35R12W2, FP35R12W, FP35R, FP35, FP3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans IGBT Module N-CH 1200V 54A 215000mW 23-Pin EASY2B-1 Tray
***ment14 APAC
IGBT, LOW POWER, 1200V, 35A, EASYPIM; Transistor Polarity:N Channel; DC Collector Current:35A; Collector Emitter Voltage Vces:1.85V; Power Dissipation Pd:215W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:23; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:215W
***ineon
EasyPIM 2B 1200V PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC. | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon
Teil # Mfg. Beschreibung Aktie Preis
FP35R12W2T4BOMA1
DISTI # V99:2348_17558162
Infineon Technologies AGTrans IGBT Module N-CH 1200V 54A 215000mW Tray
RoHS: Compliant
15
  • 1:$50.7100
FP35R12W2T4BOMA1
DISTI # FP35R12W2T4BOMA1-ND
Infineon Technologies AGIGBT MODULE VCES 1200V 35A
RoHS: Not compliant
Min Qty: 15
Container: Bulk
Temporarily Out of Stock
  • 15:$49.8393
FP35R12W2T4BOMA1
DISTI # 32445726
Infineon Technologies AGTrans IGBT Module N-CH 1200V 54A 215000mW Tray
RoHS: Compliant
15
  • 1:$50.7100
FP35R12W2T4BOMA1
DISTI # FP35R12W2T4BOMA1
Infineon Technologies AGLOW POWER EASY - Trays (Alt: FP35R12W2T4BOMA1)
RoHS: Compliant
Min Qty: 15
Container: Tray
Americas - 0
  • 150:$35.8900
  • 90:$36.7900
  • 60:$37.6900
  • 30:$38.6900
  • 15:$39.1900
FP35R12W2T4BOMA1
DISTI # 13AC8733
Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 54A,Transistor Polarity:N Channel,DC Collector Current:54A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:215W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes44
  • 1:$51.3400
FP35R12W2T4
DISTI # 641-FP35R12W2T4
Infineon Technologies AGIGBT Modules IGBT-MODULE
RoHS: Not compliant
0
  • 1:$53.4100
  • 5:$52.2300
  • 10:$49.8400
  • 25:$47.7500
FP35R12W2T4BOMA1
DISTI # 1116098
Infineon Technologies AGIGBT MODULE EASYPIM IGBT4 1200V 35A, EA109
  • 25:£32.6500
  • 10:£33.4900
  • 5:£34.3700
  • 1:£35.9400
FP35R12W2T4BOMA1
DISTI # FP35R12W2T4
Infineon Technologies AGConverter-Brake-Inverter 1200V 54A EASY2
RoHS: Compliant
15
  • 1:€43.7500
  • 3:€37.7500
  • 10:€34.7500
  • 20:€33.4500
FP35R12W2T4BOMA1
DISTI # 2726163
Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 54A
RoHS: Compliant
44
  • 5:$65.0900
  • 2:$68.7700
  • 1:$70.0900
FP35R12W2T4BOMA1
DISTI # 2726163
Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 54A44
  • 50:£34.6600
  • 10:£35.4000
  • 5:£36.1300
  • 1:£36.8700
Bild Teil # Beschreibung
FP35R12W2T4PB11BPSA1

Mfr.#: FP35R12W2T4PB11BPSA1

OMO.#: OMO-FP35R12W2T4PB11BPSA1

IGBT Modules BOND MODULE
FP35R12W2T4_B11

Mfr.#: FP35R12W2T4_B11

OMO.#: OMO-FP35R12W2T4-B11

IGBT Modules IGBT 1200V 35A
FP35R12W2T4PBPSA1

Mfr.#: FP35R12W2T4PBPSA1

OMO.#: OMO-FP35R12W2T4PBPSA1

IGBT Modules BOND MODULE
FP35R12W2T4-B11

Mfr.#: FP35R12W2T4-B11

OMO.#: OMO-FP35R12W2T4-B11-1190

Neu und Original
FP35R12W2T4B11BOMA1

Mfr.#: FP35R12W2T4B11BOMA1

OMO.#: OMO-FP35R12W2T4B11BOMA1-INFINEON-TECHNOLOGIES

IGBT MODULE 1200V 35A
FP35R12W2T4PB11BPSA1

Mfr.#: FP35R12W2T4PB11BPSA1

OMO.#: OMO-FP35R12W2T4PB11BPSA1-INFINEON-TECHNOLOGIES

MOD IGBT LOW PWR EASY2B-2
FP35R12W2T4PBPSA1

Mfr.#: FP35R12W2T4PBPSA1

OMO.#: OMO-FP35R12W2T4PBPSA1-INFINEON-TECHNOLOGIES

MOD IGBT LOW PWR EASY2B-1
FP35R12W2T4_B11

Mfr.#: FP35R12W2T4_B11

OMO.#: OMO-FP35R12W2T4-B11-125

IGBT Modules IGBT 1200V 35A
FP35R12W2T4

Mfr.#: FP35R12W2T4

OMO.#: OMO-FP35R12W2T4-125

IGBT Modules IGBT-MODULE
FP35R12W2T4BOMA1

Mfr.#: FP35R12W2T4BOMA1

OMO.#: OMO-FP35R12W2T4BOMA1-INFINEON-TECHNOLOGIES

Trans IGBT Module N-CH 1200V 54A 215000mW Tray
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von FP35R12W2T4BOMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
54,03 $
54,03 $
10
51,33 $
513,32 $
100
48,63 $
4 863,07 $
500
45,93 $
22 964,50 $
1000
43,23 $
43 227,30 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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