IGP01N120H2

IGP01N120H2
Mfr. #:
IGP01N120H2
Hersteller:
Rochester Electronics, LLC
Beschreibung:
IGBT Transistors HIGH SPEED 2 TECH 1200V 1A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IGP01N120H2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
INFINEON
Produktkategorie
IGBTs - Single
Serie
IGP01N120
Verpackung
Rohr
Teil-Aliasnamen
IGP01N120H2XK IGP01N120H2XKSA1 SP000683036
Gewichtseinheit
0.211644 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-220-3
Aufbau
Single
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 40 C
Kollektor-Emitter-Spannung-VCEO-Max
1200 V
Maximale Gate-Emitter-Spannung
+/- 20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
3.2 A
Tags
IGP01, IGP0, IGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans IGBT Chip N-CH 1.2KV 3.2A 3-Pin(3+Tab) TO-220AB
***hard Electronics
Power Bipolar Transistor, 3.2A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN
***nell
IGBT, N, 1200V, 1.3A, TO-220; DC Collector Current: 3.2A; Collector Emitter Saturation Voltage Vce(on): 2.8V; Power Dissipation Pd: 28W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-220; Operating Temp
***ark
IGBT, N, 1200V, 1.3A, TO-220; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:1.3A; Voltage, Vce Sat Max:2.8V; Power Dissipation:28W; Case Style:TO-220; Termination Type:Through ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
IGP01N120H2XKSA1
DISTI # IGP01N120H2XKSA1-ND
Infineon Technologies AGIGBT 1200V 3.2A 28W TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
    IGP01N120H2
    DISTI # SP000683036
    Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 3.2A 3-Pin TO-220AB Tube (Alt: SP000683036)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1:€1.0059
    • 10:€0.7849
    • 25:€0.7019
    • 50:€0.6379
    • 100:€0.6199
    • 500:€0.6069
    • 1000:€0.5979
    IGP01N120H2Infineon Technologies AGPower Bipolar Transistor, 3.2A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
    RoHS: Compliant
    13000
    • 1000:$0.7100
    • 500:$0.7400
    • 100:$0.7700
    • 25:$0.8100
    • 1:$0.8700
    IGP01N120H2XKSA1Infineon Technologies AGPower Bipolar Transistor, 3.2A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
    RoHS: Compliant
    20000
    • 1000:$0.7100
    • 500:$0.7400
    • 100:$0.7700
    • 25:$0.8100
    • 1:$0.8700
    IGP01N120H2
    DISTI # 726-IGP01N120H2
    Infineon Technologies AGIGBT Transistors HIGH SPEED 2 TECH 1200V 1A
    RoHS: Compliant
    134
    • 1:$1.6800
    • 10:$1.3500
    • 100:$1.0300
    • 500:$0.9180
    • 1000:$0.7250
    • 2500:$0.6400
    • 5000:$0.6280
    • 10000:$0.6170
    IGP01N120H2XKSA1
    DISTI # N/A
    Infineon Technologies AGIGBT Transistors IGBT PRODUCTS0
      Bild Teil # Beschreibung
      IGP01N120H2XKSA1

      Mfr.#: IGP01N120H2XKSA1

      OMO.#: OMO-IGP01N120H2XKSA1

      IGBT Transistors IGBT PRODUCTS
      IGP01N120H2S

      Mfr.#: IGP01N120H2S

      OMO.#: OMO-IGP01N120H2S-1190

      Neu und Original
      IGP01N120H2XKSA1

      Mfr.#: IGP01N120H2XKSA1

      OMO.#: OMO-IGP01N120H2XKSA1-INFINEON-TECHNOLOGIES

      IGBT 1200V 3.2A 28W TO220-3
      IGP01N120H2

      Mfr.#: IGP01N120H2

      OMO.#: OMO-IGP01N120H2-126

      IGBT Transistors HIGH SPEED 2 TECH 1200V 1A
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4500
      Menge eingeben:
      Der aktuelle Preis von IGP01N120H2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,93 $
      0,93 $
      10
      0,88 $
      8,79 $
      100
      0,83 $
      83,30 $
      500
      0,79 $
      393,35 $
      1000
      0,74 $
      740,40 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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