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IPW60R180C7XKSA1

IPW60R180C7XKSA1
Mfr. #:
IPW60R180C7XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET HIGH POWER_NEW
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPW60R180C7XKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPW60R180C7XKSA1 Datasheet
ECAD Model:
Mehr Informationen:
IPW60R180C7XKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Vds - Drain-Source-Durchbruchspannung:
600 V
Handelsname:
CoolMOS
Verpackung:
Rohr
Höhe:
21.1 mm
Länge:
16.13 mm
Serie:
CoolMOS C7
Breite:
5.21 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
240
Unterkategorie:
MOSFETs
Teil # Aliase:
IPW60R180C7 SP001296232
Gewichtseinheit:
1.340411 oz
Tags
IPW60R18, IPW60R1, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-247 Tube
***ark
Mosfet, N-Ch, 600V, 13A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.155Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Teil # Mfg. Beschreibung Aktie Preis
IPW60R180C7XKSA1
DISTI # V99:2348_06378535		Infineon Technologies AGTrans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		211
  • 500:$2.1349
  • 250:$2.3020
  • 100:$2.4530
  • 10:$2.8849
  • 1:$3.7257
IPW60R180C7XKSA1
DISTI # V36:1790_06378535		Infineon Technologies AGTrans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    IPW60R180C7XKSA1
    DISTI # IPW60R180C7XKSA1-ND    		Infineon Technologies AGMOSFET N-CH 600V 13A TO247-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		On Order
    • 2640:$1.8052
    • 720:$2.2474
    • 240:$2.6400
    • 25:$3.0464
    • 10:$3.2220
    • 1:$3.5900
    IPW60R180C7XKSA1
    DISTI # 32713908    		Infineon Technologies AGTrans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		211
    • 500:$2.2950
    • 250:$2.4747
    • 100:$2.6370
    • 10:$3.1013
    • 4:$4.0051
    IPW60R180C7XKSA1
    DISTI # IPW60R180C7XKSA1    		Infineon Technologies AGTrans MOSFET N-CH 650V 13A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW60R180C7XKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 1440:$1.5900
    • 2400:$1.5900
    • 480:$1.6900
    • 960:$1.6900
    • 240:$1.7900
    IPW60R180C7XKSA1
    DISTI # 34AC1731    		Infineon Technologies AGMOSFET, N-CH, 600V, 13A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:13A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes275
    • 500:$2.1600
    • 250:$2.4000
    • 100:$2.5400
    • 50:$2.6700
    • 25:$2.8000
    • 10:$2.9300
    • 1:$3.4400
    IPW60R180C7XKSA1
    DISTI # 726-IPW60R180C7XKSA1    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		0
    • 1:$3.4100
    • 10:$2.9000
    • 100:$2.5100
    • 250:$2.3800
    • 500:$2.1400
    IPW60R180C7XKSA1
    DISTI # 2781191    		Infineon Technologies AGMOSFET, N-CH, 600V, 13A, TO-247-3
    RoHS: Compliant    		275
    • 1000:$2.5800
    • 500:$2.6300
    • 250:$2.7800
    • 100:$2.9400
    • 10:$3.3300
    • 1:$3.5500
    IPW60R180C7XKSA1
    DISTI # 2781191    		Infineon Technologies AGMOSFET, N-CH, 600V, 13A, TO-247-3335
    • 100:£2.2600
    • 10:£2.6300
    • 1:£3.0900
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2500
    Menge eingeben:
    Der aktuelle Preis von IPW60R180C7XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    3,41 $
    3,41 $
    10
    2,90 $
    29,00 $
    100
    2,51 $
    251,00 $
    250
    2,38 $
    595,00 $
    500
    2,14 $
    1 070,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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