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UJ3N065080K3S

UJ3N065080K3S
Mfr. #:
UJ3N065080K3S
Hersteller:
UnitedSiC
Beschreibung:
JFET 80m? - 650V SiC Normally-On JFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
UJ3N065080K3S Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
UJ3N065080K3S Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
UnitedSiC
Produktkategorie:
JFET
RoHS:
Y
Technologie:
SiC
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Polarität des Transistors:
N-Kanal
Aufbau:
Single
Vds - Drain-Source-Durchbruchspannung:
650 V
Vgs - Gate-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
32 A
Rds On - Drain-Source-Widerstand:
80 mOhms
Pd - Verlustleistung:
190 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
UJ3N
Verpackung:
Rohr
Marke:
UnitedSiC
Produktart:
JFETs
Werkspackungsmenge:
30
Unterkategorie:
Transistoren
Tags
UJ3N, UJ3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
UJ3N Normally-On JFET Transistors
United Silicon Carbide UJ3N Normally-On JFET Transistors exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. Each of the devices normally-on characteristics with low RDS(ON) at VGS = 0V are ideal for current protection circuits without the need for active control. These devices are also well suited for cascode operation.
Bild Teil # Beschreibung
UJ3N120070K3S

Mfr.#: UJ3N120070K3S

OMO.#: OMO-UJ3N120070K3S

 JFET 70m? - 1200V SiC Normally-On JFET
UJ3N065025K3S

Mfr.#: UJ3N065025K3S

OMO.#: OMO-UJ3N065025K3S

 JFET 650V/25mOhm SiC JFET G3, N-ON
DN2535N5-G

Mfr.#: DN2535N5-G

OMO.#: OMO-DN2535N5-G

 MOSFET 350V 25Ohm
DN2535N5-G

Mfr.#: DN2535N5-G

OMO.#: OMO-DN2535N5-G-MICROCHIP-TECHNOLOGY

 MOSFET N-CH 350V 500MA TO220-3
HSS-B20-NP-12

Mfr.#: HSS-B20-NP-12

OMO.#: OMO-HSS-B20-NP-12-CUI

 HEATSINK TO-220 6.8W ALUMINUM
Verfügbarkeit
Aktie:
200
Auf Bestellung:
2183
Menge eingeben:
Der aktuelle Preis von UJ3N065080K3S dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
18,90 $
18,90 $
10
18,00 $
180,00 $
25
16,66 $
416,50 $
50
15,76 $
788,00 $
100
15,31 $
1 531,00 $
250
13,95 $
3 487,50 $
500
13,05 $
6 525,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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