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IPA65R660CFD

IPA65R660CFD
Mfr. #:
IPA65R660CFD
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 700V 6A TO220FP CoolMOS CFD2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPA65R660CFD Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPA65R660CFD Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220FP-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
6 A
Rds On - Drain-Source-Widerstand:
660 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
22 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
27.8 W
Aufbau:
Single
Handelsname:
CoolMOS
Verpackung:
Rohr
Höhe:
16.15 mm
Länge:
10.65 mm
Serie:
CoolMOS CFD2
Transistortyp:
1 N-Channel
Breite:
4.85 mm
Marke:
Infineon-Technologien
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
8 nS
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
40 nS
Teil # Aliase:
IPA65R660CFDXKSA1 IPA65R66CFDXK SP000838284
Gewichtseinheit:
0.211644 oz
Tags
IPA65R66, IPA65R6, IPA65R, IPA65, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPA65R660CFD
DISTI # 30579289		Infineon Technologies AGTrans MOSFET N-CH 700V 6A 3-Pin(3+Tab) TO-220 Full-Pak
RoHS: Compliant		190
  • 100:$0.5827
IPA65R660CFDXKSA1
DISTI # IPA65R660CFDXKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 6A TO220
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$1.0262
IPA65R660CFD
DISTI # C1S322000455120		Infineon Technologies AGTrans MOSFET N-CH 650V 6A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		190
  • 100:$0.4570
IPA65R660CFD
DISTI # IPA65R660CFDXKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 6A 3-Pin TO-220FP Tube - Rail/Tube (Alt: IPA65R660CFDXKSA1)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.7679
  • 2000:$0.7399
  • 3000:$0.7129
  • 5000:$0.6889
  • 10000:$0.6769
IPA65R660CFDXKSA2
DISTI # IPA65R660CFDXKSA2		Infineon Technologies AGTrans MOSFET N-CH 650V 6A 3-Pin TO-220FP Tube - Rail/Tube (Alt: IPA65R660CFDXKSA2)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
    IPA65R660CFD
    DISTI # 726-IPA65R660CFD    		Infineon Technologies AGMOSFET N-Ch 700V 6A TO220FP CoolMOS CFD2
    RoHS: Compliant    		425
    • 1:$1.5700
    • 10:$1.3400
    • 100:$1.0700
    • 500:$0.9330
    IPA65R660CFDXKSA2
    DISTI # 726-IPA65R660CFDXKSA    		Infineon Technologies AGMOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther
    RoHS: Compliant    		0
    • 1:$1.5700
    • 10:$1.3400
    • 100:$1.0700
    • 500:$0.9330
    Bild Teil # Beschreibung
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    IPA65R065C7XKSA1

    Mfr.#: IPA65R065C7XKSA1

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    IPA65R150CFDXKSA2

    Mfr.#: IPA65R150CFDXKSA2

    OMO.#: OMO-IPA65R150CFDXKSA2

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    IPA65R190CFDA

    Mfr.#: IPA65R190CFDA

    OMO.#: OMO-IPA65R190CFDA-1190

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    Mfr.#: IPA65R600E6,65E6600

    OMO.#: OMO-IPA65R600E6-65E6600-1190

    		 Neu und Original
    IPA65R660CFD

    Mfr.#: IPA65R660CFD

    OMO.#: OMO-IPA65R660CFD-1190

    		 Trans MOSFET N-CH 700V 6A 3-Pin(3+Tab) TO-220 Full-Pak
    IPA65R380E6

    Mfr.#: IPA65R380E6

    OMO.#: OMO-IPA65R380E6-124

    		 Darlington Transistors MOSFET N-Ch 700V 10.6A TO220FP-3 CoolMOS E6
    IPA65R110CFD

    Mfr.#: IPA65R110CFD

    OMO.#: OMO-IPA65R110CFD-317

    		 RF Bipolar Transistors MOSFET N-Ch 700V 31.2A TO220FP CoolMOS CFD2
    IPA65R190E6

    Mfr.#: IPA65R190E6

    OMO.#: OMO-IPA65R190E6-317

    		 RF Bipolar Transistors MOSFET N-Ch 700V 20.2A TO220FP-3 CoolMOS E6
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2000
    Menge eingeben:
    Der aktuelle Preis von IPA65R660CFD dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,56 $
    1,56 $
    10
    1,33 $
    13,30 $
    100
    1,06 $
    106,00 $
    500
    0,93 $
    466,50 $
    1000
    0,77 $
    773,00 $
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