MW6S004NT1

MW6S004NT1
Mfr. #:
MW6S004NT1
Hersteller:
NXP / Freescale
Beschreibung:
RF MOSFET Transistors HV6 1950MHZ 2W PLD1.5N
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MW6S004NT1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
E
Polarität des Transistors:
N-Kanal
Technologie:
Si
Vds - Drain-Source-Durchbruchspannung:
68 V
Gewinnen:
18 dB
Ausgangsleistung:
4 W
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
PLD-1.5-3
Verpackung:
Spule
Aufbau:
Single
Höhe:
1.83 mm
Länge:
6.73 mm
Arbeitsfrequenz:
2 GHz
Serie:
MW6S004NT1
Breite:
5.97 mm
Marke:
NXP / Freescale
Kanalmodus:
Erweiterung
Feuchtigkeitsempfindlich:
ja
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
12 V
Vgs th - Gate-Source-Schwellenspannung:
2 V
Teil # Aliase:
935320257515
Gewichtseinheit:
0.009877 oz
Tags
MW6S004NT1, MW6S004NT, MW6S004N, MW6S004, MW6S00, MW6S0, MW6S, MW6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,1 to 2000 MHz, 4 W, Typ Gain in dB is 18 @ 1960 MHz, 28 V, LDMOS, SOT1811
***ment14 APAC
RF MOSFET, N CHANNEL, 68V, 466-03; Transistor Type:RF MOSFET; Drain Source Voltage Vds:68V; Operating Frequency Min:1MHz; Operating Frequency Max:2GHz; RF Transistor Case:PLD-1.5; No. of Pins:4; Filter Terminals:Surface Mount
***ark
RF MOSFET, N CHANNEL, 68V, 466-03; Transistor Type:RF FET; Drain Source Voltage, Vds:68V; RF Transistor Case:466; Gain:18dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:1960MHz ;RoHS Compliant: Yes
***nell
TRANSISTOR, RF, 68V, PLD-1.5-4; Drain Source Voltage Vds: 68VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1MHz; Operating Frequency Max: 2000MHz; RF Transistor Case: PLD-1.5; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***ure Electronics
Single N-Channel 60 V 11 mOhm 33 nC OptiMOS™ Power Mosfet - TDSON-8
*** Source Electronics
Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP T/R / OptiMOS3 Power-Transistor
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***nell
MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***emi
N-Channel MOSFET, Logic Level Enhancement Mode, 50V 0.22A, 1.6Ω
***(Formerly Allied Electronics)
Transistor, MOSFET, N-channel, 50V, 0.22A, logic level, fast switching, SOT23 | ON Semiconductor BSS138K
***inecomponents.com
SOT23, 50V NCh Enhancement Mode Field Effect Transistor with
***Yang
Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R - Tape and Reel
***el Electronic
Surface Mount Ceramic Multilayer Capacitor 0.1uF 10% X7R 50V 0805 Paper T/R
***ment14 APAC
MOSFET, N-CH, 50V, 0.22A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:220mA; Source Voltage Vds:50V; On Resistance
***r Electronics
Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***nell
MOSFET, N-CH, 50V, 0.22A, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 220mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 1.6ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 600mV; Power Dissipation Pd: 350mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 220 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 2.5 / Gate-Source Voltage V = 12 / Fall Time ns = 35 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 60 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350
*** Source Electronics
Trans MOSFET N-CH 50V 0.16A 3-Pin SOT-523 T/R / MOSFET N-CH 50V 160MA SOT-523
***(Formerly Allied Electronics)
N-Channel Enhancement MOSFET SOT-23 | Diodes Inc DMN55D0UT-7
***ure Electronics
DMN55D0UT Series 50 V 160 mA N-Channel Enhancement Mode Mosfet - SOT-523
***ark
Mosfet, N-Ch, 50V, Sot-523-3; Transistor Polarity:N Channel; Continuous Drain Current Id:160Ma; Drain Source Voltage Vds:50V; On Resistance Rds(On):3.1Ohm; Rds(On) Test Voltage Vgs:4V; Threshold Voltage Vgs:800Mv; Power Dissipation Rohs Compliant: Yes |Diodes Inc. DMN55D0UT-7
***(Formerly Allied Electronics)
Transistor, dual N-channel, enhancement mode, 50V, 0.3A, MOSFET, SOT-23 | Diodes Inc DMN53D0U-7
***ure Electronics
N-Channel 50 V 2 Ohm 520 mW Surface Mount Mosfet - SOT-23
***ical
Trans MOSFET N-CH 50V 0.3A 3-Pin SOT-23 T/R
***icontronic
Small Signal Field-Effect Transistor, 0.3A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***S
French Electronic Distributor since 1988
***ical
N-Channel Enhancement Mode MOSFET Plus PNP Transistor Automotive 6-Pin SOT-363 T/R
***ure Electronics
DMB53D0UDW series 50 V 4 Ohm N-Channel Mosfet + NPN Transistor - SOT-363
***ark
Transistor, Npn/N-Ch, 50V, 0.16A, Sot363 Rohs Compliant: Yes |Diodes Inc. DMB53D0UDW-7
***-Wing Technology
Tape & Reel (TR) Surface Mount 3 RoHS Compliant Mosfet Transistor 53A 50V 20Ohm 125C TJ
***et
Trans MOSFET N-CH 50V 0.1A 3-Pin CP T/R
***nell
2SK536 - MOSFET N-CHANNEL 50V 0.1A;
Teil # Mfg. Beschreibung Aktie Preis
MW6S004NT1
DISTI # V72:2272_07190054
NXP SemiconductorsTrans RF MOSFET N-CH 68V 3-Pin PLD-1.5 T/R
RoHS: Compliant
1134
  • 1000:$6.5540
  • 500:$6.8690
  • 250:$7.5180
  • 100:$7.9330
  • 25:$9.0269
  • 10:$9.8760
  • 1:$10.7190
MW6S004NT1
DISTI # MW6S004NT1CT-ND
NXP SemiconductorsFET RF 68V 1.96GHZ PLD-1.5
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1518In Stock
  • 500:$8.0730
  • 100:$9.0751
  • 10:$10.7450
  • 1:$11.6900
MW6S004NT1
DISTI # MW6S004NT1DKR-ND
NXP SemiconductorsFET RF 68V 1.96GHZ PLD-1.5
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1518In Stock
  • 500:$8.0730
  • 100:$9.0751
  • 10:$10.7450
  • 1:$11.6900
MW6S004NT1
DISTI # MW6S004NT1TR-ND
NXP SemiconductorsFET RF 68V 1.96GHZ PLD-1.5
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
1000In Stock
  • 1000:$7.8944
MW6S004NT1
DISTI # 27493967
NXP SemiconductorsTrans RF MOSFET N-CH 68V 3-Pin PLD-1.5 T/R
RoHS: Compliant
1695
  • 1000:$6.2568
  • 500:$6.3425
  • 250:$6.4306
  • 100:$6.5211
  • 50:$6.6143
  • 25:$6.7101
  • 11:$6.8088
MW6S004NT1
DISTI # 25767000
NXP SemiconductorsTrans RF MOSFET N-CH 68V 3-Pin PLD-1.5 T/R
RoHS: Compliant
1134
  • 1000:$6.5540
  • 500:$6.8690
  • 250:$7.5180
  • 100:$7.9330
  • 25:$9.0270
  • 10:$9.8760
  • 1:$10.7190
MW6S004NT1
DISTI # 27494153
NXP SemiconductorsTrans RF MOSFET N-CH 68V 3-Pin PLD-1.5 T/R
RoHS: Compliant
1000
  • 1000:$5.8375
MW6S004NT1
DISTI # 29753929
NXP SemiconductorsTrans RF MOSFET N-CH 68V 3-Pin PLD-1.5 T/R
RoHS: Compliant
73
  • 5:$11.6000
MW6S004NT1
DISTI # MW6S004NT1
NXP SemiconductorsTrans MOSFET N-CH 68V 3-Pin PLD-1.5 T/R (Alt: MW6S004NT1)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Asia - 0
  • 1000:$5.7408
  • 2000:$5.5813
  • 3000:$5.4305
  • 5000:$5.2876
  • 10000:$5.2189
  • 25000:$5.1520
  • 50000:$5.0232
MW6S004NT1
DISTI # MW6S004NT1
NXP SemiconductorsTrans MOSFET N-CH 68V 3-Pin PLD-1.5 T/R - Tape and Reel (Alt: MW6S004NT1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$6.5900
  • 2000:$6.5900
  • 4000:$6.5900
  • 6000:$6.4900
  • 10000:$6.4900
MW6S004NT1
DISTI # 81K3648
NXP SemiconductorsTrans MOSFET N-CH 68V 3-Pin PLD-1.5 T/R - Tape and Reel (Alt: 81K3648)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1:$6.2400
MW6S004NT1
DISTI # 34R2431
NXP SemiconductorsTrans MOSFET N-CH 68V 3-Pin PLD-1.5 T/R - Product that comes on tape, but is not reeled (Alt: 34R2431)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 1:$11.0800
  • 10:$10.1600
  • 25:$9.2400
  • 50:$8.7800
  • 100:$8.3100
  • 250:$7.6200
  • 500:$6.9300
MW6S004NT1
DISTI # 34R2431
NXP SemiconductorsRF MOSFET, N CHANNEL, 68V, 466-03,Drain Source Voltage Vds:68V,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:1MHz,Operating Frequency Max:2GHz,RF Transistor Case:PLD-1.5,No. of Pins:4Pins , RoHS Compliant: Yes1695
  • 1:$4.6300
  • 10:$4.6300
  • 25:$4.6300
  • 50:$4.6300
  • 100:$4.6300
  • 250:$4.6300
  • 500:$4.6300
MW6S004NT1
DISTI # 81K3648
NXP SemiconductorsRF MOSFET, N CHANNEL, 68V, 466-03, FULL REEL,Drain Source Voltage Vds:68V,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:1MHz,Operating Frequency Max:2GHz,RF Transistor Case:PLD-1.5,Gain:18dB , RoHS Compliant: Yes1000
  • 1:$4.6700
  • 1000:$4.6700
MW6S004NT1
DISTI # 841-MW6S004NT1
NXP SemiconductorsRF MOSFET Transistors HV6 1950MHZ 2W PLD1.5N
RoHS: Compliant
1036
  • 1:$11.0800
  • 10:$10.1600
  • 25:$9.2400
  • 100:$8.3100
  • 250:$7.6200
  • 500:$6.9300
  • 1000:$6.2400
MW6S004NT1
DISTI # MW6S004NT1
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
786
  • 1:$11.5700
  • 10:$10.4600
  • 25:$9.8900
MW6S004NT1
DISTI # 2674349
NXP SemiconductorsRF MOSFET, N CHANNEL, 68V, 466-03, FULL
RoHS: Compliant
1000
  • 1000:£5.4900
MW6S004NT1
DISTI # 2776246
NXP SemiconductorsTRANSISTOR, RF, 68V, PLD-1.5-4
RoHS: Compliant
646
  • 1:$18.9000
  • 5:$17.1000
  • 10:$15.2800
  • 50:$14.0800
  • 100:$13.3000
  • 250:$12.6000
MW6S004NT1
DISTI # 2674349
NXP SemiconductorsRF MOSFET, N CHANNEL, 68V, 466-03, FULL REEL
RoHS: Compliant
1000
  • 1000:$12.5000
MW6S004NT1
DISTI # C1S233100208775
NXP SemiconductorsTrans RF MOSFET N-CH 68V 3-Pin PLD-1.5 T/R
RoHS: Compliant
1134
  • 250:$7.5180
  • 100:$7.9330
  • 25:$9.0269
  • 10:$9.8760
  • 1:$10.7190
MW6S004NT1
DISTI # C1S233100176573
NXP SemiconductorsTrans RF MOSFET N-CH 68V 3-Pin PLD-1.5 T/R
RoHS: Compliant
73
  • 50:$11.4000
  • 10:$13.1000
  • 5:$15.9000
  • 3:$19.7000
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OMO.#: OMO-LC05111C02MTTTG

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OMO.#: OMO-BQ27441DRZR-G1A

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PIC18F8722-I/PT

Mfr.#: PIC18F8722-I/PT

OMO.#: OMO-PIC18F8722-I-PT

8-bit Microcontrollers - MCU 128 KB FL 4K RAM 70 I/O
STM32F429NIH6

Mfr.#: STM32F429NIH6

OMO.#: OMO-STM32F429NIH6

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LC05111C02MTTTG

Mfr.#: LC05111C02MTTTG

OMO.#: OMO-LC05111C02MTTTG-ON-SEMICONDUCTOR

Battery Management 1 CELL LIB PROTECTION IC
Verfügbarkeit
Aktie:
468
Auf Bestellung:
2451
Menge eingeben:
Der aktuelle Preis von MW6S004NT1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
11,08 $
11,08 $
10
10,16 $
101,60 $
25
9,24 $
231,00 $
100
8,31 $
831,00 $
250
7,62 $
1 905,00 $
500
6,93 $
3 465,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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